BUK456-60A.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 BUK456-60A 데이타시트 다운로드

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
BUK456-60A/B
DESCRIPTION
·High speed switching
APPLICATIONS
·use in Switched Mode Power Supplies (SMPS),
motor control,welding, And in general purpose switching
resistance application
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
Drain
BUK456-60A
Current-continuou
s@ TC=37
BUK456-60B
Total Dissipation@TC=25
Max. Operating Junction Temperature
Storage Temperature Range
60
±30
52
51
150
175
175
V
V
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
Rth j-a Thermal Resistance,Junction to Ambient
1.0 /W
60 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
BUK456-60A/B
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA
VGS(TH)
RDS(ON)
IGSS
Gate Threshold Voltage
VDS= VGS; ID= 1mA
Drain-Source On-stage Resistance
VGS= 10V; BUK456-60A
ID= 29A
BUK456-60B
Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS= 60V;VGS= 0
VSD Diode Forward Voltage
IF= 52A;VGS= 0
MIN MAX UNIT
60 V
2.1 4
V
0.028
0.03
Ω
±100 nA
10 uA
2.5 V
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn