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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUY58
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min.)
·Low Collector Saturation Voltage-
: VCE(sat)= 1.3V@ IC= 10A
APPLICATIONS
·Designed for general switching applications at higher outputs.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
250 V
VCES
Collector-Emitter Voltage
250 V
VCEO Collector-Emitter Voltage
160 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
15 A
ICM Collector Current-Peak
25 A
IB Base Current-Continuous
PC
Collector Power Dissipation
@TC25
Tj Junction Temperature
Tstg Storage Temperature Range
5
117
175
-65~175
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 1.28 /W
·
isc websitewww.iscsemi.cn
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUY58
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA; IB= 0
160
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1.25A
VBE(sat) Base-Emitter Saturation Voltage
IC= 10A; IB= 1.25A
VBE(on)-1 Base-Emitter On Voltage
IC= 10A; VCE= 1.5V
VBE(on)-2 Base-Emitter On Voltage
IC= 12A; VCE= 1.5V
VBE(on)-2 Base-Emitter On Voltage
ICES Collector Cutoff Current
IEBO Emitter Cutoff Current
IC= 1A; VCE= 1.5V
VCE= 250V; VBE= 0
VCE= 250V; VBE= 0; TC= 125
VEB= 6V; IC= 0
1.3 V
1.5 V
1.5 V
1.7 V
1.0 V
1.0
10
mA
1.0 mA
hFE-1
DC Current Gain
IC= 1A; VCE= 1.5V
20
hFE-2
DC Current Gain
IC= 10A; VCE= 1.5V
12
hFE-3
DC Current Gain
IC= 12A; VCE= 1.5V
10
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 10V
20 MHz
COB Collector Output Capacitance
IE= 0; VCB= 10V, f= 1MHz
330 pF
Switching Times
ton Turn-On Time
ts Storage Time
tf Fall Time
IC= 10A; IB1= -IB2= 1A; VCC= 60V;
tp= 10μs
1.0 μs
1.6 μs
0.6 μs
isc websitewww.iscsemi.cn
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