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HFC2N60U
600V N-Channel MOSFET
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 5.5 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : 4 ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
November 2014
BVDSS = 600 V
RDS(on) typ = ȍ
ID = 2 A
TO-126
1
23
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600
2.0 *
1.3 *
8.0 *
ρ30
116
2.0
5.4
4.5
PD
TJ, TSTG
TL
Power Dissipation (TC = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
10
12.5
-55 to +150
300
* Drain current limited by junction temperature
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
13
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Units
/W
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Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage
Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 1.0 A
2.5
--
Off Characteristics
BVDSS
ǻBVDSS
/ǻTJ
IDSS
IGSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS = 0 V, ID = 250
ID = 250 , Referenced to 25
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125
VGS = ρ30 V, VDS = 0 V
Dynamic Characteristics
600
--
--
--
--
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 300 V, ID = 2.0 A,
RG = 25 Ÿ
(Note 4,5)
VDS = 480 V, ID = 2.0 A,
VGS = 10 V
(Note 4,5)
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
--
ISM Pulsed Source-Drain Diode Forward Current
--
VSD Source-Drain Diode Forward Voltage IS = 2.0 A, VGS = 0 V
--
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 2.0 A, VGS = 0 V
diF/dt = 100 A/ȝV (Note 4)
--
--
-- 4.5
4.0 5.0
V
Ÿ
-- -- V
0.6 -- V/
-- 1
-- 10
-- ρ100
320 420
38 50
6.5 8.5
20 50
20 50
30 70
20 50
5.5 7.5 nC
1.8 -- nC
3.5 -- nC
-- 2.0
-- 8.0
-- 1.4
206 --
0.76 --
A
V
ȝ&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=53mH, IAS=2A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$di/dt”$ȝV, VDD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
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Typical Characteristics
101
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
* Notes :
1. 300us Pulse Test
2. TC = 25oC
10-1
V , Drain-Source Voltage [V]
DS
Figure 1. On Region Characteristics
10
8
VGS = 10V
6
4
VGS = 20V
2
Note : T = 25oC
J
0
0246
ID, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
500
C = C + C (C = shorted)
iss gs gd ds
Coss = Cds + Cgd
Crss = Cgd
400
Ciss
300
200
100
0
10-1
Coss
* Note ;
1. V = 0 V
GS
2. f = 1 MHz
Crss
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10
25oC
150oC
-25oC
* Notes :
1. V = 30V
DS
2. 300us Pulse Test
0.1
2 4 6 8 10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10
1
0.1
0.0
150oC
25oC
* Notes :
1. VGS= 0V
2. 300us Pulse Test
0.2 0.4 0.6 0.8 1.0
VSD, Source-Drain Voltage [V]
1.2
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 120V
10 VDS = 300V
VDS = 480V
8
6
4
2
Note : ID = 2.0A
0
0123456
Figure
6.
GateQGC, ThotaalrGgaete
Charge [nC]
Characteristics
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Typical Characteristics (continued)
1.2
1.1
1.0
0.9
0.8
-100
 Note :
1. VGS = 0 V
2. I = 250PA
D
-50 0 50 100 150
T , Junction Temperature [oC]
J
200
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
101 is Limited by R DS(on)
100 Ps
100 1 ms
100 ms
DC
10-1
10-2
100
* Notes :
1. T = 25 oC
C
2. TJ = 150 oC
3. Single Pulse
101
102
103
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Note :
1. VGS = 10 V
2. ID = 1 A
-50 0 50 100 150
T , Junction Temperature [oC]
J
200
Figure 8. On-Resistance Variation
vs Temperature
2.0
1.5
1.0
0.5
0.0
25 50 75 100 125
TC, Case Temperature [oC]
Figure 10. Maximum Drain Current
vs Case Temperature
150
101
D=0.5
0.2
0.1
100
0.05
10-1
0.02
0.01
10-2
10-5
* Notes :
1. ZTJC(t) = 13 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZTJC(t)
single pulse
PDM
10-4
10-3
10-2
t1
t2
10-1
100
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
101
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Fig 12. Gate Charge Test Circuit & Waveform
Same Type
.ȍ
as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
10V
10V
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDD
( 0.5 rated VDS )
DUT
VDS
90%
10%
Vin
td(on)
tr
t on
td(off)
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
VDD
EAS =
--1--
2
LL IAS2
BVDSS
--------------------
BVDSS -- VDD
BVDSS
IAS
ID (t)
DUT
VDD
VDS (t)
t p Time
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