HFD2N65F.pdf 데이터시트 (총 8 페이지) - 파일 다운로드 HFD2N65F 데이타시트 다운로드

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July 2015
HFD2N65F / HFU2N65F
600V N-Channel MOSFET
BVDSS = 650 V
RDS(on) typ ȍ
ID = 2 A
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 6.5 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
D-PAK I-PAK
2
1
3
HFD2N65F
1
2
3
HFU2N65F
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
PD
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TA = 25)
Power Dissipation (TC = 25)
- Derate above 25
650
2
1.3
8
ρ30
110
2
4.2
2.5
42
0.34
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
W
W
W/
Thermal Resistance Characteristics
Symbol
Parameter
RșJC
Junction-to-Case
RșJA Junction-to-Ambient*
RșJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
2.98
50
110
Units
/W
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Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage
Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 1 A
2.0
--
Off Characteristics
BVDSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS = 0 V, ID = 250
VDS = 650 V, VGS = 0 V
VDS = 520 V, TC = 125
VGS = ρ30 V, VDS = 0 V
650
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 325 V, ID = 2 A,
RG = 25 Ÿ
(Note 4,5)
VDS = 520 V, ID = 2 A,
VGS = 10 V
(Note 4,5)
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 2 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 2 A, VGS = 0 V
diF/dt = 100 A/ȝV (Note 4)
--
--
--
--
--
-- 4.0
4.0 5.0
V
Ÿ
-- -- V
-- 10
-- 100
-- ρ100
290 --
37 --
4.5 --
16 --
17 --
28 --
20 --
6.5 -- nC
1.5 -- nC
2.2 -- nC
-- 2
-- 8
-- 1.4
200 --
0.7 --
A
V
ȝ&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=50mH, IAS=2.0A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$GLGW”$ȝV9DD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
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Typical Characteristics
101
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
100
10-1
100
* Notes :
1. 300us Pulse Test
2. TC = 25oC
101
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
12
9
VGS = 10V
6
3 VGS = 20V
* Note : TJ = 25oC
0
012345
ID, Drain Current[A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
500
C = C + C (C = shorted)
iss gs gd ds
Coss = Cds + Cgd
400
C Crss = Cgd
iss
300 Coss
200
* Note ;
1. VGS = 0 V
100 Crss 2. f = 1 MHz
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
25oC
1
150oC
-25oC
* Notes :
1. VDS= 30V
2. 300us Pulse Test
0.1
2 3 4 5 6 7 8 9 10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
1
150oC 25oC
0.1
0.2
* Notes :
1. V = 0V
GS
2. 300us Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
VDS = 130V
VDS = 325V
8 VDS = 520V
6
4
2
* Note : ID = 2.0A
0
01234567
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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Typical Characteristics (continued)
1.2
1.1
1.0
0.9
0.8
-100
 Note :
1. VGS = 0 V
2. ID = 250PA
-50 0 50 100 150
T , Junction Temperature [oC]
J
200
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
101 is Limited by R DS(on)
10 Ps
100 Ps
1 ms
10 ms
100 100 ms
DC
10-1
100
* Notes :
1. T = 25 oC
C
2. TJ = 150 oC
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
103
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
Note :
1. VGS = 10 V
2. I = 1 A
D
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs Temperature
2.0
1.5
1.0
0.5
0.0
25 50 75 100 125
TC, Case Temperature [oC]
Figure 10. Maximum Drain Current
vs Case Temperature
150
D=0.5
100
0.2
0.1
0.05
* Notes :
1. ZTJC(t) = 2.98 oC/W Max.
2. Duty Factor, D=t1/t2
3.
T
JM
-
T
C
=
P
DM
*
ZTJC(t)
10-1 0.02
0.01
10-2
10-5
single pulse
PDM
10-4
10-3
10-2
t1
t2
10-1
100
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
101
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Fig 12. Gate Charge Test Circuit & Waveform
Same Type
.ȍ
as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
10V
10V
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDD
( 0.5 rated VDS )
DUT
VDS
90%
10%
Vin
td(on)
tr
t on
td(off)
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
VDD
EAS =
--1--
2
LL IAS2
BVDSS
--------------------
BVDSS -- VDD
BVDSS
IAS
ID (t)
DUT
VDD
VDS (t)
t p Time
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