2SK1203.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 2SK1203 데이타시트 다운로드

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1203
DESCRIPTION
·Drain Current ID= 6A@ TC=25
·Drain Source Voltage-
: VDSS= 900V(Min)
·Fast Switching Speed
APPLICATIONS
·Designed for high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
900
±20
V
V
Drain Current-continuous@ TC=256 A
Total Dissipation@TC=25
100 W
Max. Operating Junction Temperature
Storage Temperature Range
150
-55~15
0
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
th j-c Thermal Resistance,Junction to Case
0.83 /W
th j-a Thermal Resistance,Junction to Ambient 35 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1203
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10 VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=3A
IGSS Gate Source Leakage Current
VGS= ±16V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS=720V; VGS= 0
VSD Diode Forward Voltage
IF=6A; VGS=0
tr Rise time
ton Turn-on time
tf Fall time
VGS=10V;ID=3A;RL=10Ω
toff Turn-off time
MIN TYP MAX UNIT
900 V
2.0 4.0 V
2.0 3.0
Ω
±10 uA
250 uA
1.0 V
150 ns
165 ns
120 ns
250 ns
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
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