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Elektronische Bauelemente
SSPR7N10
7.5A , 100V , RDS(ON) 112 m
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSPR7N10 provide the designer with the best
combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The SPR-8PP package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
SPR-8PP
FEATURES
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
MARKING
7N10
= Date code
PACKAGE INFORMATION
Package
MPQ
SPR-8PP
3K
Leader Size
13 inch
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
3.25 3.40
3.05 3.25
3.20 3.40
3.00 3.20
0.65 BSC.
2.40 2.60
REF.
G
H
I
J
K
L
Millimeter
Min. Max.
1.35 1.55
0.24 0.35
1.13 REF.
0.30 0.50
0.10 0.20
0.70 0.90
SD
SD
SD
GD
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1@VGS=10V TC=25°C
TC=70°C
Pulsed Drain Current 2
Single Pulse Avalanche Energy 3
VDS
VGS
ID
IDM
EAS
100
±20
7.5
5.5
13
8
Avalanche Current
Power Dissipation 4
TC=25°C
Operating Junction & Storage Temperature
IAS
PD
TJ, TSTG
11
20.8
-55~150
Thermal Resistance Rating
Thermal Resistance Junction-Ambient1(Max).
Thermal Resistance Junction-Case1(Max).
RθJA
RθJC
50
6
Unit
V
V
A
A
mJ
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
20-May-2014 Rev.A
Any changes of specification will not be informed individually.
Page 1 of 4

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Elektronische Bauelemente
SSPR7N10
7.5A , 100V , RDS(ON) 112 m
N-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
BVDSS
100 -
-
V VGS=0, ID= 250uA
Gate-Threshold Voltage
VGS(th)
1 1.7 2.5 V VDS=VGS, ID=250uA
Gate-Source Leakage Current
IGSS - - ±100 nA VGS= ±20V
Drain-Source Leakage Current
- -1
VDS=80V, VGS=0, TJ=25°C
IDSS
uA
- -5
VDS=80V, VGS=0, TJ=55°C
Static Drain-Source On-Resistance 2
RDS(ON)
- 105 112
VGS=10V, ID=7A
m
- 115 120
VGS=4.5V, ID=5A
Gate Resistance
Rg - 2 4 f =1.0MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time 2
Rise Time
Turn-off Delay Time
Fall Time
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
- 26.2 -
- 4.6 -
- 5.1 -
- 4.2 -
- 8.2 -
- 35.6 -
- 9.6 -
ID=7A
nC VDS=80V
VGS=10V
VDD=50V
nS
ID=7A
VGS=10V
RG=3.3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss - 1535 -
VGS =0
Coss - 60 - pF VDS=15V
f =1.0MHz
Crss - 37 -
Guaranteed Avalanche Characteristics
Single Pulse Avalanche Energy 5
EAS
1.6 -
- mJ VDD=25V, L=0.1mH, IAS=5A
Diode Forward Voltage 2
Continuous Source Current 1,6
Pulsed Source Current 2,6
Source-Drain Diode
VSD - - 1.2 V IS=1A, VGS=0, TJ=25°C
IS - - 7.5 A
VD=VG=0, Force Current
ISM - - 13 A
Reverse Recovery Time
Reverse Recovery Charge
Trr - 37 - nS IF=7A, dl/dt=100A/µS,
Qrr
- 27.3 -
nC TJ=25°C
Note:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper , 10sec , 125/W at steady state
2. The data tested by pulsed , pulse width 300us , duty cycle 2%
3. The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=11A
4. The power dissipation is limited by 150°C juncti on temperature
5. The Min. value is 100% EAS tested guarantee.
6. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
http://www.SeCoSGmbH.com/
20-May-2014 Rev.A
Any changes of specification will not be informed individually.
Page 2 of 4

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Elektronische Bauelemente
CHARACTERISTIC CURVES
SSPR7N10
7.5A , 100V , RDS(ON) 112 m
N-Channel Enhancement Mode Power MOSFET
http://www.SeCoSGmbH.com/
20-May-2014 Rev.A
Any changes of specification will not be informed individually.
Page 3 of 4