BAW56T.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 BAW56T 데이타시트 다운로드

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Transys
Electronics
LIMITED
SOT-523 Plastic-Encapsulated Diodes
BAS16T/BAW56T/BAV70T/BAV99T
SWITCHING DIODE
FEATURES
Power dissipation
PD: 150 mW (Tamb=25)
Forward Current
IF:
Reverse Voltage
75 m A
VR: 85 V
Operating and storage junction temperature range
TJ, Tstg: -55to +150
SOT-523
BAS16T Marking: A2 BAW56T Marking: JD
BAV70T Marking: JJ
BAV99T Marking: JE
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reverse recovery time
Symbol
V(BR)
IR1
IR2
VF
CD
t rr
Test conditions
IR= 100µA
VR=75V
VR=25V
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=0V, f=1MHz
MIN MAX
85
2
0.03
715
855
1000
1250
1.5
4
UNIT
V
µA
µA
mV
pF
nS

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Typical Characteristics
BAS16T/BAW56T/BAV70T/BAV99T