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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-523 Plastic-Encapsulate Diodes
B0520X SCHOTTKY BARRIER DIODE
SOD-523
FEATURES
z Low Forward Voltage Drop
z Guard Ring Construction for Transient Protection
z High Conductance
z Also Available in Lead Free Version
MARKING:
The marking bar indicates the cathode
Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings @Ta=25
Parameter
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage reverse voltage (DC)
Average rectified output current
@Not=n8-r.3empestitive Peak Forward Surge Current
Power dissipation
Thermal resistance junction to ambient
Junction temperature
Storage temperature
Symb ol
VRRM
VRWM
VR
VR(RMS)
Io
IFSM
PD
RθJA
Tj
TSTG
Electrical Characteristics @Ta=25
Parameter
Sy mbol
Minimum reverse b-
reakdown voltage
V(BR)
Forward voltage
Reverse current
VF1
VF2
VF3
VF4
VF5
IR
Capacitance between terminals
CT
Min
20
Typ
Value
20
14
0.5
5.5
150
667
125
-55~+150
Max
180
240
290
380
600
50
30
Unit
V
mV
mV
μA
pF
Unit
V
V
A
A
mW
/W
Conditions
IR=250μA
IF=0.1mA
IF=1mA
IF=10mA
IF=100mA
IF=500mA
VR=10V
VR=1V,f=1MHz
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Typical Characteristics
Forward Characteristics
500
100
T
=100
a
10
T
=25
a
1
0.1
0
100 200 300 400
FORWARD VOLTAGE VF (mV)
500
Capacitance Characteristics
50
T =25
a
f=1MHz
40
30
20
10
0
0 5 10 15 20 25 30
REVERSE VOLTAGE VR (V)
Reverse Characteristics
10000
1000
Ta=100
100
10
Ta=25
1
0.1
0.1
200
5 10 15
REVERSE VOLTAGE VR (V)
Power Derating Curve
20
150
100
50
0
0 25 50 75 100 125
AMBIENT TEMPERATURE Ta ()
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SOD-523 Package Outline Dimensions
6\PERO
A
A1
b
c
D
E
E1
E2
L
ș
SOD-523 Suggested Pad Layout
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0LQ 0D[
0.510
0.770
0.500
0.700
0.250
0.350
0.080
0.150
0.750
0.850
1.100
1.300
1.500
1.700
0.200 REF
0.010
0.070
7° REF
'LPHQVLRQV ,Q ,QFKHV
0LQ 0D[
0.020
0.031
0.020
0.028
0.010
0.014
0.003
0.006
0.030
0.033
0.043
0.051
0.059
0.067
0.008 REF
0.001
0.003
7° REF
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