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DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D102
BAS70W series
Schottky barrier (double) diodes
Product specification
Supersedes data of 1996 Mar 19
1999 Mar 26

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Philips Semiconductors
Schottky barrier (double) diodes
Product specification
BAS70W series
FEATURES
Low forward voltage
High breakdown voltage
Guard ring protected
Very small SMD package
Low capacitance.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes.
PINNING
BAS70
PIN
W -04W -05W -06W
1 a1 a1 a1 k1
2 n.c. k2 a2 k2
3 k1 k1, a2 k1, k2 a1, a2
handbook, 2 columns
3
DESCRIPTION
Planar Schottky barrier diodes. Single
diodes (BAS70W) and double diodes
with different pinning (BAS70-04W;
-05W; -06W) are available.
The diodes are encapsulated in a
SOT323 very small plastic SMD
package.
1
Top view
2
MBC870
Fig.1 Simplified outline
(SOT323) and pin
configuration.
MARKING
TYPE NUMBER
BAS70W
BAS70-04W
BAS70-05W
BAS70-06W
MARKING
CODE(1)
73
74
75
76
Note
1. = -: Made in Hong Kong.
= t: Made in Malaysia.
3
12
n.c.
MLC357
Fig.2 BAS70W single diode
configuration (symbol).
3
12
MLC358
Fig.3 BAS70-04W diode
configuration (symbol).
3
12
MLC359
Fig.4 BAS70-05W diode
configuration (symbol).
3
12
MLC360
Fig.5 BAS70-06W diode
configuration (symbol).
1999 Mar 26
2

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Philips Semiconductors
Schottky barrier (double) diodes
Product specification
BAS70W series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
VR
IF
IFRM
IFSM
Tstg
Tj
Tamb
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
tp 1 s; δ ≤ 0.5
tp < 10 ms
MIN. MAX. UNIT
70 V
70 mA
70 mA
100 mA
65 +150 °C
150 °C
65 +150 °C
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per diode
VF forward voltage
IR reverse current
τ charge carrier life time (Krakauer method)
Cd diode capacitance
Note
1. Pulse test: tp = 300 µs; δ = 0.02.
CONDITIONS
see Fig.6
IF = 1 mA
IF = 10 mA
IF = 15 mA
VR = 50 V; note 1; see Fig.7
VR = 70 V; note 1; see Fig.7
IF = 5 mA
f = 1 MHz; VR = 0; see Fig.9
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Refer to SOT323 standard mounting conditions.
MAX.
UNIT
410 mV
750 mV
1V
100 nA
10 µA
100 ps
2 pF
VALUE
625
UNIT
K/W
1999 Mar 26
3

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Philips Semiconductors
Schottky barrier (double) diodes
GRAPHICAL DATA
10 2
IF
(mA)
10
MRA803
1
10 1
(1) (2) (3) (4)
10 2
0
0.2 0.4 0.6 0.8
1
VF (V)
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(4) Tamb = 40 °C.
Fig.6 Forward current as a function of forward
voltage; typical values.
103
rdiff
102
MRA802
10
1
101
1
10 102
IF (mA)
Product specification
BAS70W series
10 2
IR
(µA)
10
MRA805
(1)
1 (2)
10 1
10 2
(3)
10 3
0
20 40 60 80
VR (V)
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.7 Reverse current as a function of reverse
voltage; typical values.
2
Cd
(pF)
1.5
MRA804
1
0.5
0
0 20 40 60 80
VR (V)
f = 10 kHz.
Fig.8 Differential forward resistance as a function
of forward current; typical values.
f = 1 MHz; Tamb = 25 °C.
Fig.9 Diode capacitance as a function of reverse
voltage; typical values.
1999 Mar 26
4

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Philips Semiconductors
Schottky barrier (double) diodes
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
DB
Product specification
BAS70W series
SOT323
E AX
y
3
1
e1 bp
e
2
wM B
HE v M A
A
A1
Q
Lp
detail X
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
A1
max
bp
cD
E
e e1 HE Lp Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25 2.2
0.10 1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45 0.23
0.15 0.13
0.2
0.2
OUTLINE
VERSION
SOT323
IEC
REFERENCES
JEDEC
EIAJ
SC-70
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
1999 Mar 26
5