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Elektronische Bauelemente
BAT54TW / BAT54ADW /BAT54CDW
BAT54SDW/ BAT54BRW
Surface Mount Schottky Barrier Diode Array
FEATURES
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
· Low Turn-on Voltage
· Fast Switching
· PN Junction Guard Ring for Transient and
ESD Protection
A
BC
MECHANICAL DATA
· Case: SOT-363, Molded Plastic
· Terminals: Solderable per MIL-STD-202,
Method 208
· Polarity: See Diagrams Below
· Weight: 0.016 grams (approx.)
· Mounting Position: Any
K
J
4
5
6O
3
2
1
H
DF
L
M
SOT-363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
H 1.80 2.20
J ¾ 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25
a 0°
All Dimensions in mm
BAT54TW Marking: KLA BAT54ADW Marking: KL6
BAT54CDW Marking: KL7
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating
Symbol
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
VR
PF
Forward Current (DC)
Junction Temperature
IF
TJ
Storage Temperature Range
Tstg
BAT54SDW Marking: KL8
Value
30
225
1.8
200 Max
125 Max
– 55 to +150
BAT54BRW Marking:KLB
Unit
Volts
mW
mW/°C
mA
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Typ
Max Unit
Reverse Breakdown Voltage (IR = 10 µA)
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)
Reverse Leakage (VR = 25 V)
V(BR)R
30
— Volts
CT — 7.6 10 pF
IR — 0.5 2.0 µAdc
Forward Voltage (IF = 0.1 mAdc)
Forward Voltage (IF = 30 mAdc)
Forward Voltage (IF = 100 mAdc)
VF — 0.22 0.24 Vdc
VF — 0.41 0.5 Vdc
VF — 0.52 1.0 Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1
trr — — 5.0 ns
Forward Voltage (IF = 1.0 mAdc)
Forward Voltage (IF = 10 mAdc)
Forward Current (DC)
VF — 0.29 0.32 Vdc
VF — 0.35 0.40 Vdc
IF — — 200 mAdc
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current (t < 1.0 s)
IFRM
IFSM
— 300 mAdc
— 600 mAdc
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2

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Elektronische Bauelemente
BAT54TW / BAT54ADW /BAT54CDW
BAT54SDW/ BAT54BRW
Surface Mount Schottky Barrier Diode Array
+10 V
820
2k
100 µH
0.1 µF
IF
0.1 µF
tr tp
10%
t
IF
trr t
50 Ω Οutput
Pulse
Generator
DUT
50 Input
90%
Sampling
Oscilloscope
VR
Input Signal
IR(REC) = 1 mA
IR
Output Pulse
(IF = IR = 10 mA; measured
at IR(REC) = 1 mA)
Notes: 1. A 2.0 kvariable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
100
10 1 50°C
1000
TA = 150°C
100
10
TA = 125°C
1 25°C
1.0
85°C
25°C
– 40°C – 55°C
0.1
0.0 0.1 0.2 0.3 0.4 0.5
VF, Forward Voltage (V)
Figure 2. Forward Voltage
0.6
1.0
0.1
0.01
0.001
0
TA = 85°C
5 10 15 20
VR, Reverse Voltage (V)
Figure 3. Leakage Current
TA = 25°C
25 30
14
12
10
8
6
4
2
0
0 5 10 15 20 25 30
VR, Reverse Voltage (V)
Figure 4. Total Capacitance
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 2