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STGB10NC60KD, STGD10NC60KD
STGF10NC60KD, STGP10NC60KD
10 A, 600 V short-circuit rugged IGBT
Features
Lower on voltage drop (VCE(sat))
Lower CRES / CIES ratio (no cross-conduction
susceptibility)
Very soft ultra fast recovery antiparallel diode
Short-circuit withstand time 10µs
Description
This IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
Applications
High frequency motor controls
SMPS and PFC in both hard switch and
resonant topologies
Motor drives
TAB
3
1
D2PAK
TAB
3
1
DPAK
TAB
3
2
1
TO-220FP
3
2
1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STGB10NC60KDT4
GB10NC60KD
STGD10NC60KDT4
GD10NC60KD
STGF10NC60KD
GF10NC60KD
STGP10NC60KD
GP10NC60KD
Packages
D2PAK
DPAK
TO-220FP
TO-220
November 2009
Doc ID 11423 Rev 6
Packaging
Tape and reel
Tube
1/20
www.st.com
20

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Contents
Contents
STGx10NC60KD
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
2/20 Doc ID 11423 Rev 6

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STGx10NC60KD
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
D²PAK
TO-220
Value
DPAK
VCES Collector-emitter voltage (VGE = 0)
IC(1) Continuous collector current at TC = 25°C
IC(1) Continuous collector current at TC = 100°C
ICL(2) Turn-off latching current
ICP(3) Pulsed collector current
VGE Gate-emitter voltage
IF Diode RMS forward current at Tc=25°C
IFSM
Surge non repetitive forward current Tp = 10 ms
sinusoidal
PTOT Total dissipation at TC = 25°C
VISO
tscw
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1s;TC=25°C)
Short-circuit withstand time
VCE = 0.5 VCES, Tj = 125 °C, RG = 10 , VGE = 12 V
Tstg Storage temperature
Tj Operating junction temperature
1. Calculated according to the iterative formula
600
20
10
30
30
±20
10
20
65 62
--
10
– 55 to 150
IC(TC)
=
--------------------------------------T----j-(--m----a---x---)---–-----T---C----------------------------------------
Rthj c × VCE(sat)(max)(Tj(max), IC(TC))
2. Vclamp = 80 % VCES, VGE = 15 V, RG = 10 , TJ = 150 °C
3. Pulse width limited by maximum junction temperature and turn-off within RBSOA
TO-220FP
9
6
25
2500
Unit
V
A
A
A
A
V
A
A
W
V
µs
°C
Doc ID 11423 Rev 6
3/20

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Electrical ratings
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case IGBT
Rthj-case Thermal resistance junction-case diode
Rthj-amb Thermal resistance junction-ambient
STGx10NC60KD
TO-220
D²PAK
1.9
4
62.5
Value
DPAK
2
4.5
100
Unit
TO-220FP
5
7 °C/W
62.5
4/20 Doc ID 11423 Rev 6

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STGx10NC60KD
2 Electrical characteristics
Electrical characteristics
(Tj =25°C unless otherwise specified)
Table 4. Static
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Collector-emitter
V(BR)CES breakdown voltage
(VGE= 0)
IC= 1mA
VCE(sat)
Collector-emitter saturation
voltage
VGE= 15V, IC= 5A
VGE= 15V, IC= 5A, Tj= 125°C
VGE(th) Gate threshold voltage
VCE= VGE, IC= 250µA
ICES
Collector cut-off current
(VGE = 0)
VCE= 600 V
VCE=600 V, Tj = 125°C
IGES
Gate-emitter leakage
current (VCE = 0)
VGE= ±20V
gfs(1) Forward transconductance VCE = 15V, IC= 5A
1. Pulse test: pulse duration < 300 µs, duty cycle < 2 %
600
4.5
V
2.2 2.5
1.8
V
V
6.5 V
150 µA
1 mA
±100 nA
15 S
Table 5. Dynamic
Symbol
Parameter
Cies
Coes
Cres
Qg
Qge
Qgc
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Test conditions
VCE = 25V, f = 1MHz,
VGE = 0
VCE = 390V, IC = 5A,
VGE = 15V,
(see Figure 19)
Min. Typ. Max. Unit
380 pF
- 46 - pF
8.5 pF
19 nC
- 5 - nC
9 nC
Doc ID 11423 Rev 6
5/20