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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-523 Plastic-Encapsulate Diodes
BAT64X SCHOTTLKY BARRIER DIODE
SOD-523
FEATURES
z For low-loss, fast-recovery, meter protection, bias isolation
and clamping application
z Integrated diffused guard ring
z Low forward
MARKING: t
Maximum Ratings (Ta=25unless otherwise noted)
Parameter
Peak reverse voltage
DC reverse
Non-repetitive Peak surge forward current @t=8.3ms
Mean rectifying current
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction temperature
Storage temperature
Symbol
VRM
VR
IFSM
IO
PD
RθJA
Tj
Tstg
Value
40
0.8
0.25
150
667
125
-55~+150
Unit
V
A
A
mW
/W
Electrical Ratings (Ta=25unless otherwise noted )
Parameter
Symbol Min. Typ. Max. Unit
Reverse breakdown voltage
Forward voltage
Reverse current
VR 40
VF
IR
V
350
430
mV
520
750
2 μA
Capacitance between terminals
CT
6 pF
Reverse recovery time
trr
5 ns
Conditions
IR=10μA
IF=1mA
IF=10mA
IF=30mA
IF=100mA
VR=30V
VR=1V,f=1MHz
IF=10mA,IR=10mA,
IR=1mA,RL=100Ω
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Typical Characteristics
Forward Characteristics
100
10
Reverse Characteristics
100
Ta=100
10
11
Ta=25
0.1 0.1
0.01
0
200 400
FORWARD VOLTAGE VF (mV)
0.01
600 0
10 20 30
REVERSE VOLTAGE VR (V)
40
Capacitance Characteristics Per Diode
20
Ta=25
f=1MHz
15
10
5
0
0 4 8 12 16 20
REVERSE VOLTAGE VR (V)
Power Derating Curve
200
150
100
50
0
0 25 50 75 100 125
AMBIENT TEMPERATURE Ta ()
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SOD-523 Package Outline Dimensions
6\PERO
A
A1
b
c
D
E
E1
E2
L
ș
SOD-523 Suggested Pad Layout
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0LQ 0D[
0.510
0.770
0.500
0.700
0.250
0.350
0.080
0.150
0.750
0.850
1.100
1.300
1.500
1.700
0.200 REF
0.010
0.070
7° REF
'LPHQVLRQV ,Q ,QFKHV
0LQ 0D[
0.020
0.031
0.020
0.028
0.010
0.014
0.003
0.006
0.030
0.033
0.043
0.051
0.059
0.067
0.008 REF
0.001
0.003
7° REF
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E,Mar,2015