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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D067
BF857; BF858; BF859
NPN high-voltage transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1996 Dec 09

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Philips Semiconductors
NPN high-voltage transistors
Product specification
BF857; BF858; BF859
DESCRIPTION
NPN transistors in a TO-202 plastic package.
An A-version with e-b-c pinning instead of e-c-b is
available on request.
APPLICATIONS
For use in video output stages of black and white and
colour television receivers.
PINNING
PIN DESCRIPTION
1 emitter
2 collector, connected to mounting base
3 base
handbook, halfpage
1 23
MBH794
Fig.1 Simplified outline (TO-202) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
collector-base voltage
BF857
BF858
BF859
VCEO
collector-emitter voltage
BF857
BF858
BF859
ICM peak collector current
Ptot total power dissipation
hFE DC current gain
Cre feedback capacitance
fT transition frequency
CONDITIONS
open emitter
open base
Tmb 75 °C
IC = 30 mA; VCE = 10 V
IC = ic = 0; VCE = 30 V; f = 1 MHz
IC = 15 mA; VCE = 10 V; f = 100 MHz
MIN. MAX. UNIT
160 V
250 V
300 V
160 V
250 V
300 V
300 mA
6W
26
3 pF
90
MHz
1996 Dec 09
2

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Philips Semiconductors
NPN high-voltage transistors
Product specification
BF857; BF858; BF859
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
BF857
BF858
BF859
collector-emitter voltage
BF857
BF858
BF859
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb 25 °C
Tmb 75 °C
MIN. MAX. UNIT
160 V
250 V
300 V
160 V
250 V
300 V
5V
100 mA
300 mA
100 mA
2W
6W
65 +150 °C
150 °C
65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Rth j-mb
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
VALUE
62.5
12.5
UNIT
K/W
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
ICBO
ICBO
IEBO
hFE
VCEsat
Cre
fT
collector cut-off current
BF857
collector cut-off current
BF858
collector cut-off current
BF859
emitter cut-off current
DC current gain
collector-emitter saturation voltage
feedback capacitance
transition frequency
CONDITIONS
MIN.
IE = 0; VCB = 100 V
IE = 0; VCB = 200 V
IE = 0; VCB = 250 V
IC = 0; VEB = 5 V
IC = 30 mA; VCE = 10 V
IC = 30 mA; IB = 6 mA
IC = ic = 0; VCE = 30 V; f = 1 MHz
IC = 15 mA; VCE = 10 V; f = 100 MHz
26
90
MAX. UNIT
0.1 µA
0.1 µA
0.1 µA
100 nA
1V
3 pF
MHz
1996 Dec 09
3

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Philips Semiconductors
NPN high-voltage transistors
PACKAGE OUTLINE
Product specification
BF857; BF858; BF859
handbook, full pagewidth
10.4 max
3.8
3.6
3.8
0.56 max
24.2
max
2.5 max (1)
2.4 max
1 23
2.54 2.54
0.8
0.6
(3x)
4.6
max
10 MGA322
8.6
max
12.2
min
0.65 max
1.6
Dimensions in mm.
(1) Terminal dimensions within this zone are uncontrolled.
Fig.2 TO-202.
1996 Dec 09
4

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Philips Semiconductors
NPN high-voltage transistors
Product specification
BF857; BF858; BF859
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Dec 09
5