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NP90N06VDK
60 V – 90 A – N-channel Power MOS FET
Application: Automotive
Data Sheet
R07DS1297EJ0100
Rev.1.00
Oct 26, 2015
Description
NP90N06VDK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Super low on-state resistance
RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 45 A)
Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V)
Designed for automotive application and AEC-Q101 qualified
Outline
Drain
Gate
Body
Diode
Source
TO-252(MP-3ZP)
Equivalent circuit
Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred.
Ordering Information
Part No.
NP90N06VDK-E1-AY *1
NP90N06VDK-E2-AY *1
Lead Plating
Pure Sn (Tin)
Packing
Tape 2500 p/reel
Taping (E1 type)
Taping (E2 type)
Note: *1. Pb-free (This product does not contain Pb in the external electrode)
Package
TO-252(MP-3ZP)
R07DS1297EJ0100 Rev.1.00
Oct 26, 2015
Page 1 of 7

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NP90N06VDK
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) 1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Repetitive Avalanche Current 2
Repetitive Avalanche Energy 2
Tstg
IAR
EAR
Notes: *1. TC = 25°C, PW 10 μs, Duty Cycle 1%
*2. RG = 25 Ω, VGS = 20 V 0 V
Ratings
60
±20
±90
±360
147
1.2
175
55 to +175
33
108
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.02
125
°C/W
°C/W
Unit
V
V
A
A
W
W
°C
°C
A
mJ
R07DS1297EJ0100 Rev.1.00
Oct 26, 2015
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NP90N06VDK
Electrical Characteristics (TA = 25°C)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance 1
Drain to Source On-state
Resistance 1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage 1
Reverse Recovery Time
Reverse Recovery Charge
Note: *1. Pulsed test
Symbol
IDSS
IGSS
VGS(th)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
Min
1.5
40
Typ
2.1
80
3.8
4.9
4000
360
110
24
7
60
6
63
15
12
0.9
40
45
Max
1
±100
2.5
5.3
8.2
6000
540
200
60
20
120
20
95
1.5
Unit
μA
nA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Conditions
VDS = 60 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 μA
VDS = 5 V, ID = 45 A
VGS = 10 V, ID = 45 A
VGS = 4.5 V, ID = 23 A
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
VDD = 30 V, ID = 45 A,
VGS = 10 V,
RG = 0 Ω
VDD = 48 V,
VGS = 10 V,
ID = 90 A
IF = 90 A, VGS = 0 V
IF = 90 A, VGS = 0 V,
di/dt = 100 A/μs
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
PG.
VGS = 20 0 V
50 Ω
L
VDD
BVDSS
ID
VDD
IAS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
PG. RG
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VGS
VGS
Wave Form
10%
0
VDD
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off)
tf
ton toff
R07DS1297EJ0100 Rev.1.00
Oct 26, 2015
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NP90N06VDK
Typical Characteristics (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
120
100
80
60
40
20
0
0 50 100 150 200
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
ID(pulse)=360A
100
ID(DC)=90A
10
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
160
120
80
40
0
0 50 100 150
TC - Case Temperature - °C
200
1
Power Dissipation Limited
0.1
TC=25
Single Pulse
0.01
0.1
1
10
VDS - Drain to Source Voltage – V
100
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 125°C/W
10
1 Rth(ch-C) = 1.02°C/W
0.1
Single pulse
0.01
100 μ
1m
10 m
100 m
1
10 100 1000
PW - Pulse Width - s
R07DS1297EJ0100 Rev.1.00
Oct 26, 2015
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NP90N06VDK
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
400
300
VGS=10V
200
VGS=4.5V
100
Pulsed
0
0 0.5 1 1.5 2 2.5 3 3.5
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
3
2
1
VDS = VGS
ID=250μA
0
-100 -50 0 50 100 150 200
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
12
10
VGS=10V
8 4.5V
6
4
2
Pulsed
0
0.1 1 10 100 1000
ID - Drain Current - A
R07DS1297EJ0100 Rev.1.00
Oct 26, 2015
FORWARD TRANSFER CHARACTERISTICS
100
10 TA=175°C
75°C
25°C
1 -55°C
0.1
0.01
VDS = 10V
Pulsed
0.001
01234
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
CURRENT
1000
DRAIN
TA=175°C
150°C
100
75°C
25°C
-55°C
10
VDS = 5V
Pulsed
1
0.1 1 10 100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
12
Pulsed
10
8
6
4
2
ID=45A
0
0 5 10 15 20
VGS - Gate to Source Voltage - V
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