RB411D.pdf 데이터시트 (총 1 페이지) - 파일 다운로드 RB411D 데이타시트 다운로드

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SMD Type
Schottky Barrier Diode
KB411D(RB411D)
Diodes
Features
Small surface mounting type
Low VF. (VF=0.43V Typ. at 0.5A)
High reliability.
Silicon epitaxial planar
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Reverse voltage
DC Reverse voltage
Mean rectifying current
Forward current surge peak
Junction temperature
Storage temperature
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
Rating
40
20
0.5
3
125
-40 to +125
Unit
V
V
A
A
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Forwarad voltage
Reverse current
Capacitance between terminal
Symbol
Testconditons
VF1 IF=500mA
VF2 IF=10mA
IR1 VR=10V
CT VR=10V , f=1MHz
Min Typ Max Unit
0.50 V
0.30 V
30 A
20 pF
Marking
Marking
D3E
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