14N05.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 14N05 데이타시트 다운로드

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
14N05
·FEATURES
·Drain Current ID= 14A@ TC=25
·Drain Source Voltage-
: VDSS= 50V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.1Ω(Max)
·Fast Switching
·APPLICATIONS
·Switch regulators
·Switching converters motor drivers and relay drivers
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
50
±10
V
V
ID Drain Current-Continuous
14 A
PD Total Dissipation @TC=25
48 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature
-55~150
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
14N05
·ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD Diode Forward On-voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
Ciss Input Capacitance
Crss Reverse Transfer capacitance
Coss Output Capacitance
tr Rise Time
td(on)
Turn-on Delay Time
tf Fall Time
td(off)
Turn-off Delay Time
CONDITIONS
VGS= 0; ID=250µA
VDS= VGS; ID=250µA
IS= 14A ;VGS= 0
VGS= 10V; ID= 14A
VGS= ±10V;VDS= 0
VDS=40V; VGS= 0
VDS=25V;
VGS=0V;
fT=1MHz
VGS=10V;
RGS=0.6Ω
ID=7A;
VDD=25V;
RL=3.57Ω
MIN TYPE MAX UNIT
50 V
2.0 4.0 V
1.5 V
0.1 Ω
±100 nA
1 µA
670
50 pF
185
24
13
ns
16
42
·
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
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