15N15.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 15N15 데이타시트 다운로드

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
15N15
·FEATURES
·Drain Current ID= 15A@ TC=25
·Drain Source Voltage-
: VDSS= 150V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.15Ω(Max)
·Fast Switching
·APPLICATIONS
·Switching regulators
·Switching converters,motor drivers,relay drivers.
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
ID
IDM
PD
Tj
Tstg
Drain-Source Voltage
150 V
Gate-Source Voltage-Continuous
±30
V
Drain Current-Continuous
15 A
Drain Current-Single Plused
40 A
Total Dissipation @TC=25
100 W
Max. Operating Junction Temperature
150
Storage Temperature
-55~150
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
15N15
·ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID=1mA
VGS(th) Gate Threshold Voltage
VSD Diode Forward On-voltage
VDS= VGS; ID=1mA
IS= 7.5A ;VGS= 0
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VGS= 10V; ID= 7.5A
VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS=120V; VGS= 0
Ciss Input Capacitance
Crss Reverse Transfer capacitance
Coss Output Capacitance
VDS=25V;
VGS=0V;
fT=1MHz
tr Rise Time
td(on)
Turn-on Delay Time
tf Fall Time
td(off)
Turn-off Delay Time
VGS=10V;
ID=7.5A;
VDD=75V;
RGS=50Ω
MIN TYPE MAX UNIT
150 V
2.0 4.0 V
1.4 V
0.15 Ω
±100 nA
1 µA
1700
350 pF
750
150 225
50 75
ns
125 190
185 280
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
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