MMUN2216.pdf 데이터시트 (총 10 페이지) - 파일 다운로드 MMUN2216 데이타시트 다운로드

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Bias Resistor Transistor
NPN Silicon
P b Lead(Pb)-Free
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Collector Current-Continuous
MMUN2211 Series
COLLECTOR
3
BASE
1
R1
R2
2
EMITTER
3
1
2
SOT-23
Symbol
VCEO
VCBO
IC
Value
50
50
100
Unit
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristics
Total Device Dissipation FR-5 Board (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient (1)
Junction and Storage, Temperature
1. FR-4 @ minimun pad
Symbol
PD
R θJA
TJ,Tstg
Value
246
1.6
625
-65 to +150
Unit
mW
mW / °C
°C /W
°C
Device Marking and Resistor Values
Device
MMUN2211
MMUN2212
MMUN2213
MMUN2214
MMUN2215
MMUN2216
MMUN2230
MMUN2231
Marking
A8A, 24
A8B
A8C, 26
A8D
A8E
A8F
A8G
A8H
R1(k)
10
22
47
10
10
4.7
1.0
2.2
R2(k)
10
22
47
47
1.0
2.2
Device
MMUN2232
MMUN2233
MMUN2234
MMUN2235
MMUN2238
MMUN2241
Marking
A8J
A8K
A8L
A8M
A8R
A8U
R1(k)
4.7
4.7
22
2.2
2.2
100
R2(k)
4.7
47
47
47
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1/10
Rev.B 25-Jan-07

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MMUN2211 Series
ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
Characteristic
Symbol Min
OFF CHARACTERISTICS
Collector-Base Cutof f Current (VCB= 50 V, IE = 0)
Collector-Emitter Cutoff Current (VCE= 50 V, IB= 0)
Emitter-Base Cutof f Current
(VEB= 6.0 V, I C = 0)
MMUN2211
MMUN2212
MMUN2213
MMUN2214
MMUN2215
MMUN2216
MMUN2230
MMUN2231
MMUN2232
MMUN2233
MMUN2234
MMUN2235
MMUN2238
MMUN2241
ICBO
ICEO
IEBO
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Collector-Base Breakdown Voltage (I C = 10 mA, I E = 0)
Collector-Emitter Breakdown Voltage (Note 2.)
(IC = 2.0 mA, IB = 0)
ON CHARACTERISTICS (Note 2.)
V (BR)CBO
V (BR)CEO
50
50
DC Current Gain
(VCE= 10 V, IC = 5.0 mA)
MMUN2211
MMUN2212
hFE
35
60
MMUN2213
80
MMUN2214
80
MMUN2215
160
MMUN2216
160
MMUN2230
3.0
MMUN2231
8.0
MMUN2232
15
MMUN2233
80
MMUN2234
80
MMUN2235
80
MMUN2238
160
MMUN2241
160
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
(IC= 10 mA, I B = 5 mA) MMUN2230/MMUN2231
(IC= 10 mA, I B = 1 mA) MMUN2215/MMUN2216/MMUN2232
MMUN2233/MMUN2234/MMUN2235/MMUN2238
Output Voltage (on)
(VCC= 5.0 V, VB= 2.5 V, RL= 1.0 kW)
(VCC= 5.0 V, VB= 3.5 V, RL= 1.0 k W)
(VCC= 5.0 V, VB= 5.0 V, RL= 1.0 k W)
MMUN2211
MMUN2212
MMUN2213
MMUN2214
MMUN2215
MMUN2216
MMUN2230
MMUN2231
MMUN2232
MMUN2233
MMUN2234
MMUN2235
MMUN2238
MMUN2241
VCE(sat)
VOL
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0 %.
WEITRON
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Typ Max Unit
- 100 nAdc
- 500 nAdc
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.5 mAdc
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
4.0
0.1
- - Vdc
- - Vdc
60 -
100 -
140 -
140 -
350 -
350 -
5.0 -
15 -
30 -
200 -
150 -
140 -
350 -
350 -
- 0.25 Vdc
Vdc
- 0.2
- 0.2
- 0.2
- 0.2
- 0.2
- 0.2
- 0.2
- 0.2
- 0.2
- 0.2
- 0.2
- 0.2
- 0.2
- 0.2

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MMUN2211 Series
ELECTRICAL CHARACTERISTICS (TA= 25C unless otherwise noted) (Continued)
Characteristic
Symbol Min
Typ
ON CHARACTERISTICS (Note 2) (Continued)
Output Voltage (off) (VCC= 5.0 V,VB = 0.5 V ,RL= 1.0 kW)
(VCC= 5.0 V, VB= 0.050 V, RL = 1.0 kW) MMUN2230
(VCC= 5.0 V, VB= 0.25 V, RL = 1.0 kW) MMUN2215
MMUN2216
MMUN2233
MMUN2238
VOH
4.9
-
Input Resistor
R1
MMUN2211
MMUN2212
MMUN2213
MMUN2214
MMUN2215
MMUN2216
MMUN2230
MMUN2231
MMUN2232
MMUN2233
MMUN2234
MMUN2235
MMUN2238
MMUN2241
7.0 10
15.4 22
32.9 47
7.0 10
7.0 10
3.3 4.7
0.7 1.0
1.5 2.2
3.3 4.7
3.3 4.7
15.4 22
1.54 2.2
1.54 2.2
70 100
Resistor Ratio
MMUN2211/MMUN2212/MMUN2213
MMUN2214
MMUN2215/MMUN2216/MMUN2238
MMUN2241
MMUN2230/MMUN2231/MMUN2232
MMUN2233
MMUN2234
MMUN2235
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
R1/R 2
0.8
0.17
-
-
0.8
0.055
0.38
0.038
1.0
0.21
-
-
1.0
0.1
0.47
0.047
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2211
250 1
IC /IB = 10
200
0.1
150
Max
-
Unit
Vdc
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
21.0806
1.2
0.25
-
-
1.2
0.185
0.56
0.056
kW
TA = -25
25
75
100
50 RqJA= 625 /W
0.01
0
-50
0
50 100 150 0.001 0
20 40 60
TA , AMBIENT TEMPERATURE (5 )
IC, COLLECTOR CURRENT (mA)
Figure 1. Derating Curve
Figure 2. VCE(sat) vs. I C
80
WEITRON
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MMUN2211 Series
TYPICAELLECTRICAL CHARACTERISTICS
MMUN2212
1000
VCE = 10 V
4
TA = 75
3
25
-25
100 2
f = 1 MHz
lE = 0 A
TA = 25
1
10
1
10 100 0 0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
VR, REVERSE BIAS VOL TAGE (VOL TS)
Figure 3. DC Current Gain
Figure 4. Output Capcitance
100
75
10
1
0.1
25
TA = -25
10
VO = 0.2 V
1
TA = -25
75
25
0.01
VO = 5 V
0.001 0 1 2 3 4 5 6 7 8 9 10
Vin, INPUT VOLTAGE (VOL TS)
Figure 5. Output Current vs. Input Voltage
0.1
0 10 20 30 40 50
IC , COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
MMUN2211
1
IC/IB = 10
0.1
TA = -25
25
75
1000
VCE = 10 V
100
TA = 75
25 -25
0.01
0.001
0
20 40 60
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) vs. I C
WEITRON
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10
80 1
10
IC, COLLECTOR CURRENT (mA )
Figure 8. DC Current Gain
100

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MMUN2211 Series
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2212
4 100 75 25
3
f = 1 MHz
lE = 0 A
TA = 25
10
TA = -25
1
2
0.1
1
0.01
0 0 10 20 30 40
VR, REVERSE BIAS VOL TAGE (VOLTS)
50 0.001 0
VO = 5 V
2 46 8
Vin, INPUT VOLTAGE (VOL TS)
10
Figure 9. Output Capacitance
Figure 10. Output Current vs. Input Voltage
100
VO = 0.2 V
10
TA = -25
75
25
1
10
IC/IB = 10
1
0.1
0.10 10
20
30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 1 1. Input V oltage vs. Output Current
TA = -25
MMUN2213
1000
25 75
100
VCE = 10 V
TA = 75
25
-25
0.01
0
20 40 60
IC, COLLECTOR CURRENT (mA)
Figure 12. V CE(sat) vs. I C
WEITRON
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80 101
10 100
IC, COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain