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Advance Technical Information
XPTTM 650V
GenX3TM w/ Diode
IXYN100N65B3D1
Extreme Light Punch Through
IGBT for 10-30kHz Switching
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TC = 25°C
TTCC
= 110°C
= 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 3
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
TC = 25°C
50/60Hz
IISOL 1mA
t = 1min
t = 1s
Mounting Torque
Terminal Connection Torque
Maximum Ratings
650
650
±20
±30
V
V
V
V
185 A
100 A
67 A
490 A
50 A
600 mJ
ICM = 200
@VCE VCES
8
A
μs
600
-55 ... +175
175
-55 ... +175
2500
3000
1.5/13
1.3/11.5
30
W
°C
°C
°C
V~
V~
Nm/lb.in
Nm/lb.in
g
VCES = 650V
IC110 = 100A
VCE(sat)  1.85V
tfi(typ) = 73ns
SOT-227B, miniBLOC
E153432
E
G
E
C
G = Gate, C = Collector, E = Emitter
either emitter terminal can be used as
Main or Kelvin Emitter
Features
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation
2500V~ Isolation Voltage
Anti-Parallel Diode
Optimized for 10-30kHz Switching
Square RBSOA
Short Circuit Capability
High Current Handling Capability
Advantages
High Power Density
Low Gate Drive Requirement
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC = 70A, VGE = 15V, Note 1
TJ = 150C
Characteristic Values
Min. Typ. Max.
650 V
3.5 6.0 V
50 A
3 mA
100 nA
1.53
1.77
1.85 V
V
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2013 IXYS CORPORATION, All Rights Reserved
DS100680(8/15)

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Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs IC = 60A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 100A, VGE = 15V, VCE = 0.5 VCES
td(on)
tri Inductive load, TJ = 25°C
Eon IC = 50A, VGE = 15V
td(off)
VCE = 400V, RG = 3
tfi Note 2
Eoff
td(on)
tri Inductive load, TJ = 150°C
Eon IC = 50A, VGE = 15V
td(off)
VCE = 400V, RG = 3
tfi Note 2
Eoff
RthJC
RthCS
Characteristic Values
Min.
Typ. Max.
30 55
S
4740
470
103
pF
pF
pF
168 nC
30 nC
78 nC
29 ns
37 ns
1.27 mJ
150 ns
73 ns
1.37 2.00 mJ
28 ns
37 ns
2.35 mJ
198 ns
160 ns
2.16 mJ
0.25 °C/W
0.05 °C/W
IXYN100N65B3D1
SOT-227B miniBLOC (IXYN)
Reverse Diode (FRD)
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
VF IF = 100A, VGE = 0V, Note 1
IRM
trr
RthJC
IF = 100A, VGE = 0V,
-diF/dt = 700A/sVR = 400V
Characteristic Values
Min.
Typ. Max.
TJ = 150C
2.25 2.70
1.70
TJ = 150C
45
162
V
V
A
ns
0.40 C/W
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
ADVANCETECHNICALINFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to
change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

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IXYN100N65B3D1
140
120
100
80
60
40
20
0
0
140
120
100
80
60
40
20
0
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
7
Fig. 1. Output Characteristics @ TJ = 25ºC
VGE = 15V
13V
12V
11V
10V
9V
8V
7V
0.5 1 1.5 2 2.5
VCE - Volts
Fig. 3. Output Characteristics @ TJ = 150ºC
VGE = 15V
13V
12V
11V
10V
9V
8V
3
7V
6V
0.5 1 1.5 2 2.5 3
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
3.5
TJ = 25ºC
I C = 140A
70A
35A
8 9 10 11 12 13 14 15
VGE (V)
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
300 VGE = 15V
13V
250
200
150
12V
11V
10V
100 9V
50 8V
0 7V
0 2 4 6 8 10 12 14 16 18
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
1.8
VGE = 15V
1.6
I C = 140A
1.4
1.2
I C = 70A
1.0
0.8
I C = 35A
0.6
-50 -25 0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
160
140
120
100
80
60
40
20
0
4
Fig. 6. Input Admittance
TJ = 150ºC
25ºC
- 40ºC
5 6 7 8 9 10
VGE (V)
© 2013 IXYS CORPORATION, All Rights Reserved

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IXYN100N65B3D1
90
80
70
60
50
40
30
20
10
0
0
10,000
Fig. 7. Transconductance
TJ = - 40ºC
25ºC
150ºC
20 40 60 80 100 120 140 160
IC (A)
Fig. 9. Capacitance
1,000
Cies
Coes
100
Cres
f = 1 MHz
10
0
5 10 15 20 25 30 35 40
VCE (V)
Fig. 11. Forward-Bias Safe Operating Area
1000
VCE(sat) Limit
16
14 VCE = 325V
IC = 100A
12 IG = 10mA
10
8
6
4
2
0
0 20 40
Fig. 8. Gate Charge
60 80 100 120 140 160 180
QG (nC)
Fig. 10. Reverse-Bias Safe Operating Area
200
160
120
80
40 TJ = 150ºC
RG = 3
dv / dt < 10V / ns
0
100 200 300 400 500 600 700
VCE (V)
Fig. 12. Maximum Transient Thermal Impedance (IGBT)
1
100
25µs
0.1
100µs
10
1ms 0.01
1 TJ = 175ºC
TC = 25ºC
Single Pulse
10ms
0.1
1
10
VDS (V)
100
0.001
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

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Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
7
Eoff Eon - - - -
6 TJ = 150ºC , VGE = 15V
VCE = 400V
5
14
12
10
4 I C = 100A
3
8
6
2 I C = 50A
1
4
2
00
3 6 9 12 15 18 21 24 27 30 33
RG ()
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
7
Eoff Eon - - - -
6 RG = 3, VGE = 15V
VCE = 400V
5
4
IC = 100A
7
6
5
4
33
22
IC = 50A
11
00
25 50 75 100 125 150
TJ (ºC)
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
220 210
200
tfi
td(off) - - - -
200
RG = 3, VGE = 15V
180
VCE = 400V
190
160 180
140 TJ = 150ºC
170
120 160
100 150
80
TJ = 25ºC
60
140
130
40 120
50 55 60 65 70 75 80 85 90 95 100
IC (A)
IXYN100N65B3D1
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
7
6 Eoff
Eon - - - -
RG = 3, VGE = 15V
5 VCE = 400V
7
6
5
4
TJ = 150ºC
3
4
3
2
1 TJ = 25ºC
2
1
00
50 55 60 65 70 75 80 85 90 95 100
IC (A)
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
240 800
220 t f i
td(off) - - - -
TJ = 150ºC, VGE = 15V
200 VCE = 400V
700
600
180 500
160
I C = 50A
140
I C = 100A
120
400
300
200
100 100
80 0
3 6 9 12 15 18 21 24 27 30 33
RG ()
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
220 220
200 t f i
td(off) - - - -
180 RG = 3, VGE = 15V
VCE = 400V
160
I C = 50A
210
200
190
140 180
120 170
100
I C = 100A
160
80 150
60 140
40 130
20 120
25 50 75 100 125 150
TJ (ºC)
© 2013 IXYS CORPORATION, All Rights Reserved