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Advance Technical Information
XPTTM 650V
GenX3TM w/ Diode
IXYN100N65B3D1
Extreme Light Punch Through
IGBT for 10-30kHz Switching
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TC = 25°C
TTCC
= 110°C
= 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 3
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
TC = 25°C
50/60Hz
IISOL 1mA
t = 1min
t = 1s
Mounting Torque
Terminal Connection Torque
Maximum Ratings
650
650
±20
±30
V
V
V
V
185 A
100 A
67 A
490 A
50 A
600 mJ
ICM = 200
@VCE VCES
8
A
μs
600
-55 ... +175
175
-55 ... +175
2500
3000
1.5/13
1.3/11.5
30
W
°C
°C
°C
V~
V~
Nm/lb.in
Nm/lb.in
g
VCES = 650V
IC110 = 100A
VCE(sat)  1.85V
tfi(typ) = 73ns
SOT-227B, miniBLOC
E153432
E
G
E
C
G = Gate, C = Collector, E = Emitter
either emitter terminal can be used as
Main or Kelvin Emitter
Features
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation
2500V~ Isolation Voltage
Anti-Parallel Diode
Optimized for 10-30kHz Switching
Square RBSOA
Short Circuit Capability
High Current Handling Capability
Advantages
High Power Density
Low Gate Drive Requirement
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC = 70A, VGE = 15V, Note 1
TJ = 150C
Characteristic Values
Min. Typ. Max.
650 V
3.5 6.0 V
50 A
3 mA
100 nA
1.53
1.77
1.85 V
V
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2013 IXYS CORPORATION, All Rights Reserved
DS100680(8/15)

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Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs IC = 60A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 100A, VGE = 15V, VCE = 0.5 VCES
td(on)
tri Inductive load, TJ = 25°C
Eon IC = 50A, VGE = 15V
td(off)
VCE = 400V, RG = 3
tfi Note 2
Eoff
td(on)
tri Inductive load, TJ = 150°C
Eon IC = 50A, VGE = 15V
td(off)
VCE = 400V, RG = 3
tfi Note 2
Eoff
RthJC
RthCS
Characteristic Values
Min.
Typ. Max.
30 55
S
4740
470
103
pF
pF
pF
168 nC
30 nC
78 nC
29 ns
37 ns
1.27 mJ
150 ns
73 ns
1.37 2.00 mJ
28 ns
37 ns
2.35 mJ
198 ns
160 ns
2.16 mJ
0.25 °C/W
0.05 °C/W
IXYN100N65B3D1
SOT-227B miniBLOC (IXYN)
Reverse Diode (FRD)
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
VF IF = 100A, VGE = 0V, Note 1
IRM
trr
RthJC
IF = 100A, VGE = 0V,
-diF/dt = 700A/sVR = 400V
Characteristic Values
Min.
Typ. Max.
TJ = 150C
2.25 2.70
1.70
TJ = 150C
45
162
V
V
A
ns
0.40 C/W
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
ADVANCETECHNICALINFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to
change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

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IXYN100N65B3D1
140
120
100
80
60
40
20
0
0
140
120
100
80
60
40
20
0
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
7
Fig. 1. Output Characteristics @ TJ = 25ºC
VGE = 15V
13V
12V
11V
10V
9V
8V
7V
0.5 1 1.5 2 2.5
VCE - Volts
Fig. 3. Output Characteristics @ TJ = 150ºC
VGE = 15V
13V
12V
11V
10V
9V
8V
3
7V
6V
0.5 1 1.5 2 2.5 3
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
3.5
TJ = 25ºC
I C = 140A
70A
35A
8 9 10 11 12 13 14 15
VGE (V)
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
300 VGE = 15V
13V
250
200
150
12V
11V
10V
100 9V
50 8V
0 7V
0 2 4 6 8 10 12 14 16 18
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
1.8
VGE = 15V
1.6
I C = 140A
1.4
1.2
I C = 70A
1.0
0.8
I C = 35A
0.6
-50 -25 0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
160
140
120
100
80
60
40
20
0
4
Fig. 6. Input Admittance
TJ = 150ºC
25ºC
- 40ºC
5 6 7 8 9 10
VGE (V)
© 2013 IXYS CORPORATION, All Rights Reserved