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FJAF6815
High Voltage Color Display Horizontal
Deflection Output
• High Collector-Base Breakdown Voltage : BVCBO = 1500V
• Low Saturation Voltage : VCE(sat) = 3V (Max.)
• For Color Monitor
1 TO-3PF
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP* Collector Current (Pulse)
PC Collector Dissipation
TJ Junction Temperature
TSTG
Storage Temperature
* Pulse Test: PW=300µs, duty Cycle=2% Pulsed
Rating
1500
750
6
15
25
60
150
-55 ~ 150
Units
V
V
V
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
ICES
Collector Cut-off Current
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
BVCBO
Collector-Base Breakdown Voltage
BVCEO
Collector-Emitter Breakdown Voltage
BVEBO
Emitter-Base Breakdown Voltage
hFE1
hFE2
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
tSTG*
Storage Time
tF* Fall Time
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
VCB=1400V, RBE=0
VCB=800V, IE=0
VEB=4V, IC=0
IC=500µA, IE=0
IC=5mA, IB=0
IE=500µA, IC=0
VCE=5V, IC=1A
VCE=5V, IC=10A
IC=10A, IB=2.5A
IC=10A, IB=2.5A
VCC=200V, IC=8A, RL=25
IB1=1.6A, IB2= - 3.2A
1500
750
6
10
5
1 mA
10 µA
1 mA
V
V
V
8
3V
1.5 V
3 µs
0.2 µs
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
RθjC Thermal Resistance, Junction to Case
Typ
Max
2.08
Units
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A, May 2001

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Typical Characteristics
12
IB=2.0A
10
8
6
IB=0.6A
4 IB=0.4A
IB=0.2A
2
0
0 2 4 6 8 10 12
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristics
10
IC = 3 IB
1
Ta = 125oC
Ta = 25oC
Ta = - 25oC
0.1
0.01
0.1
1 10
IC [A], COLLECTOR CURRENT
100
Figure 3. Collector-Emitter Saturation Voltage
16
14
V = 5V
CE
12
10
8
6
4
2
0
0.0 0.2
125oC
25oC
- 25oC
0.4 0.6 0.8 1.0
V [V], BASE-EMITTER VOLTAGE
BE
Figure 5. Base-Emitter On Voltage
1.2
©2001 Fairchild Semiconductor Corporation
100
Ta = 125oC
Ta = 25oC
10
Ta = - 25oC
V = 5V
CE
1
0.1 1 10
IC [A], COLLECTOR CURRENT
Figure 2. DC Current Gain
100
10
I =5I
CB
Ta = 125oC
1
Ta = 25oC
Ta = - 25oC
0.1
0.01
0.1 1 10 100
IC [A], COLLECTOR CURRENT
Figure 4. Collector-Emitter Saturation Voltage
10
V = 200V,
CC
I = 8A, I = 1.6A
C B1
tSTG
1
0.1 tF
0.01
0.1 1 10
IB2 [A], REVERSE BASE CURRENT
Figure 6. Resistive Load Switching Time
Rev. A, May 2001

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Typical Characteristics (Continued)
100
V = 200V,
CC
I = 8A, I = - 3.2A
C B2
10
tSTG
1
tF
0.1
0.01
0.1
1 10
I [A], FORWARD BASE CURRENT
B1
Figure 7. Resistive Load Switching Time
100
IC (Pulse)
10 IC (DC)
t = 10ms
t = 100ms
t = 1ms
1
0.1
T = 25oC
C
Single Pulse
0.01
1
10
100
1000
10000
V [V], COLLECTOR-EMITTER VOLTAGE
CE
Figure 9. Forward Bias Safe Operating Area
80
60
40
20
0
0 25 50 75 100 125 150 175
TC [OC], CASE TEMPERATURE
Figure 11. Power Derating
©2001 Fairchild Semiconductor Corporation
10
V = 200V,
CC
I = 1.6A, I = - 3.2A
B1 B2
tSTG
1
tF
0.1
1 10
IC [A], COLLECTOR CURRENT
Figure 8. Resistive Load Switching Time
40
R = 0, I = 15A
B2 B1
V
CC
=
30V,
L
=
200µH
30
20
VBE(off) = -6V
10
VBE(off) = -3V
1
10
100
1000
10000
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 10. Reverse Bias Safe Operating Area
Rev. A, May 2001

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Package Demensions
TO-3PF
15.50 ±0.20
ø3.60 ±0.20
5.50 ±0.20
3.00 ±0.20
(1.50)
0.85 ±0.03
2.00 ±0.20
2.00 ±0.20
4.00 ±0.20
0.75
+0.20
–0.10
5.45TYP
[5.45 ±0.30]
2.00 ±0.20
5.45TYP
[5.45 ±0.30]
2.00 ±0.20
3.30 ±0.20
0.90
+0.20
–0.10
©2001 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. A, May 2001

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As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
Preliminary
First Production
No Identification Needed
Full Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H2