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FJAF6815
High Voltage Color Display Horizontal
Deflection Output
• High Collector-Base Breakdown Voltage : BVCBO = 1500V
• Low Saturation Voltage : VCE(sat) = 3V (Max.)
• For Color Monitor
1 TO-3PF
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP* Collector Current (Pulse)
PC Collector Dissipation
TJ Junction Temperature
TSTG
Storage Temperature
* Pulse Test: PW=300µs, duty Cycle=2% Pulsed
Rating
1500
750
6
15
25
60
150
-55 ~ 150
Units
V
V
V
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
ICES
Collector Cut-off Current
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
BVCBO
Collector-Base Breakdown Voltage
BVCEO
Collector-Emitter Breakdown Voltage
BVEBO
Emitter-Base Breakdown Voltage
hFE1
hFE2
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
tSTG*
Storage Time
tF* Fall Time
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
VCB=1400V, RBE=0
VCB=800V, IE=0
VEB=4V, IC=0
IC=500µA, IE=0
IC=5mA, IB=0
IE=500µA, IC=0
VCE=5V, IC=1A
VCE=5V, IC=10A
IC=10A, IB=2.5A
IC=10A, IB=2.5A
VCC=200V, IC=8A, RL=25
IB1=1.6A, IB2= - 3.2A
1500
750
6
10
5
1 mA
10 µA
1 mA
V
V
V
8
3V
1.5 V
3 µs
0.2 µs
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
RθjC Thermal Resistance, Junction to Case
Typ
Max
2.08
Units
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A, May 2001

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Typical Characteristics
12
IB=2.0A
10
8
6
IB=0.6A
4 IB=0.4A
IB=0.2A
2
0
0 2 4 6 8 10 12
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristics
10
IC = 3 IB
1
Ta = 125oC
Ta = 25oC
Ta = - 25oC
0.1
0.01
0.1
1 10
IC [A], COLLECTOR CURRENT
100
Figure 3. Collector-Emitter Saturation Voltage
16
14
V = 5V
CE
12
10
8
6
4
2
0
0.0 0.2
125oC
25oC
- 25oC
0.4 0.6 0.8 1.0
V [V], BASE-EMITTER VOLTAGE
BE
Figure 5. Base-Emitter On Voltage
1.2
©2001 Fairchild Semiconductor Corporation
100
Ta = 125oC
Ta = 25oC
10
Ta = - 25oC
V = 5V
CE
1
0.1 1 10
IC [A], COLLECTOR CURRENT
Figure 2. DC Current Gain
100
10
I =5I
CB
Ta = 125oC
1
Ta = 25oC
Ta = - 25oC
0.1
0.01
0.1 1 10 100
IC [A], COLLECTOR CURRENT
Figure 4. Collector-Emitter Saturation Voltage
10
V = 200V,
CC
I = 8A, I = 1.6A
C B1
tSTG
1
0.1 tF
0.01
0.1 1 10
IB2 [A], REVERSE BASE CURRENT
Figure 6. Resistive Load Switching Time
Rev. A, May 2001

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Typical Characteristics (Continued)
100
V = 200V,
CC
I = 8A, I = - 3.2A
C B2
10
tSTG
1
tF
0.1
0.01
0.1
1 10
I [A], FORWARD BASE CURRENT
B1
Figure 7. Resistive Load Switching Time
100
IC (Pulse)
10 IC (DC)
t = 10ms
t = 100ms
t = 1ms
1
0.1
T = 25oC
C
Single Pulse
0.01
1
10
100
1000
10000
V [V], COLLECTOR-EMITTER VOLTAGE
CE
Figure 9. Forward Bias Safe Operating Area
80
60
40
20
0
0 25 50 75 100 125 150 175
TC [OC], CASE TEMPERATURE
Figure 11. Power Derating
©2001 Fairchild Semiconductor Corporation
10
V = 200V,
CC
I = 1.6A, I = - 3.2A
B1 B2
tSTG
1
tF
0.1
1 10
IC [A], COLLECTOR CURRENT
Figure 8. Resistive Load Switching Time
40
R = 0, I = 15A
B2 B1
V
CC
=
30V,
L
=
200µH
30
20
VBE(off) = -6V
10
VBE(off) = -3V
1
10
100
1000
10000
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 10. Reverse Bias Safe Operating Area
Rev. A, May 2001