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XPTTM 650V IGBT
IXYH40N65C3H1
GenX3TM w/ Sonic Diode
Extreme Light Punch Through
IGBT for 20-60 kHz Switching
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TC = 25°C
TTCC
= 110°C
= 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 10
Clamped Inductive Load
VGE= 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
650 V
650 V
±20 V
±30 V
80 A
40 A
40 A
180 A
20 A
300 mJ
ICM = 80
VCE VCES
5
A
μs
300
-55 ... +175
175
-55 ... +175
300
260
1.13/10
6
W
°C
°C
°C
°C
°C
Nm/lb.in
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
40A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
650 V
3.5 6.0 V
50 A
3 mA
100 nA
2.00
2.40
2.35 V
V
VCES = 650V
IC110 = 40A
VCE(sat)  2.35V
tfi(typ) = 52ns
TO-247
G
CE
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
Optimized for 20-60kHz Switching
Square RBSOA
Anti-Parallel Sonic Diode
Avalanche Rated
Short Circuit Capability
International Standard Package
Advantages
High Power Density
Extremely Rugged
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
High Frequency Power Inverters
© 2014 IXYS CORPORATION, All Rights Reserved
DS100510E(12/14)

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Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs IC = 40A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 40A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 30A, VGE = 15V
VCE = 400V, RG = 10
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 150°C
IC = 30A, VGE = 15V
VCE = 400V, RG = 10
Note 2
RthJC
RthCS
Characteristic Values
Min.
Typ. Max.
16 27
S
1980
215
40
pF
pF
pF
70 nC
14 nC
34 nC
26
40
0.86
106
52
0.40
0.75
ns
ns
mJ
ns
ns
mJ
25 ns
40 ns
1.33 mJ
126 ns
80 ns
0.46 mJ
0.50 °C/W
0.21 °C/W
Reverse Sonic Diode (FRD)
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
VF IF = 30A, VGE = 0V, Note 1
ItRrrM
RthJC
I-FdiF=/d3t0=A9, 0V0GAE /=μs0,VV,R = 300V
Characteristic Values
Min. Typ. Max.
TJ = 150°C
TTJJ
=
=
150°C
150°C
2.15
32
78
2.5 V
V
A
ns
0.60 °C/W
IXYH40N65C3H1
TO-247 (IXYH) Outline
123
P
e
Terminals: 1 - Gate
2 - Collector
3 - Emitted
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
bb12
1.65 2.13
2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

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80
70
60
50
40
30
20
10
0
0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGE = 15V
13V
12V
11V
10V
9V
8V
7V
0.5 1 1.5 2 2.5 3 3.5
VCE (V)
4
Fig. 3. Output Characteristics @ TJ = 150ºC
80
VGE = 15V
70 13V
12V
11V
60
50
10V
40
30
9V
20
10 8V
0 7V
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VCE (V)
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
6
TJ = 25ºC
5
4
I C = 80A
3
40A
2
20A
1
8 9 10 11 12 13 14 15
VGE - (V)
IXYH40N65C3H1
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
240
VGE = 15V
200
14V
160 13V
120
80
40
0
0
12V
11V
10V
9V
8V
5 10 15 20 25 30
VCE (V)
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
2.0
1.8 VGE = 15V
1.6
I C = 80A
1.4
1.2 I C = 40A
1.0
0.8
I C = 20A
0.6
0.4
-50 -25 0 25 50 75 100 125 150 175
TJ (ºC)
Fig. 6. Input Admittance
70
60
50
40
30
TJ = 150ºC
20 25ºC
- 40ºC
10
0
4.5 5.5 6.5 7.5 8.5 9.5 10.5 11.5
VGE (V)
© 2014 IXYS CORPORATION, All Rights Reserved

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IXYH40N65C3H1
40
35
30
25
20
15
10
5
0
0
Fig. 7. Transconductance
TJ = - 40ºC
25ºC
150ºC
10 20 30 40 50 60 70 80
IC (A)
16
14 VCE = 325V
IC = 40A
12 IG = 10mA
Fig. 8. Gate Charge
10
8
6
4
2
0
0 10 20 30 40 50
QG - NanoCoulombs
60
70
10,000
f = 1 MHz
1,000
100
Fig. 9. Capacitance
Cies
Coes
10
0
Cres
5 10 15 20 25 30 35 40
VCE - Volts
Fig. 11. Forward-Bias Safe Operating Area
1000
VCE(sat) Limit
100
10
25µs
100µs
Fig. 10. Reverse-Bias Safe Operating Area
90
80
70
60
50
40
30
20 TJ = 150ºC
10
RG = 10
dv / dt < 10V / ns
0
200 300 400 500 600 700 800 900
VCE - Volts
Fig. 12. Maximum Transient Thermal Impedance (IGBT)
1
0.1
1
0.01
1ms
0.1 TJ = 175ºC
TC = 25ºC
Single Pulse
10ms
DC
0.01
1
10
VDS - Volts
100
1000
0.001
0.00001
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.0001
0.001
0.01
Pulse Width - Second
0.1
1

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Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
1.6
1.4 Eoff
Eon - - - -
TJ = 150ºC , VGE = 15V
1.2 VCE = 400V
I C = 60A
7
6
5
1.0 4
0.8 3
0.6
I C = 30A
2
0.4 1
0.2
10 15 20 25 30 35 40 45 50
RG - Ohms
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
1.6
1.4 Eoff
Eon - - - -
RG = 10, VGE = 15V
1.2 VCE = 400V
0
55
4.5
4.0
3.5
1.0
I C = 60A
0.8
3.0
2.5
0.6 2.0
0.4
IC = 30A
0.2
1.5
1.0
0.0
25
50 75 100
TJ - Degrees Centigrade
125
0.5
150
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
110 200
100
tfi
td(off) - - - -
180
RG = 10, VGE = 15V
90
VCE = 400V
160
80 TJ = 150ºC
140
70 120
60
TJ = 25ºC
50
100
80
40 60
30 40
15 20 25 30 35 40 45 50 55 60
IC - Amperes
© 2014 IXYS CORPORATION, All Rights Reserved
IXYH40N65C3H1
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
1.6
1.4 Eoff
Eon - - - -
RG = 10, VGE = 15V
1.2 VCE = 400V
4.0
3.5
3.0
1.0 2.5
0.8 TJ = 150ºC
0.6
TJ = 25ºC
0.4
2.0
1.5
1.0
0.2 0.5
0.0 0.0
15 20 25 30 35 40 45 50 55 60
IC - Amperes
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
90 400
85 t f i
td(off) - - - -
TJ = 150ºC, VGE = 15V
80 VCE = 400V
360
320
75 280
70 I C = 30A
65
I C = 60A
240
200
60 160
55 120
50 80
10 15 20 25 30 35 40 45 50 55
RG - Ohms
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
90 160
85 t f i
td(off) - - - -
80 RG = 10, VGE = 15V
VCE = 400V
75
70
I C = 30A
150
140
130
120
65 110
60 100
55
I C = 60A
90
50 80
45 70
40
25
50 75 100 125
TJ - Degrees Centigrade
60
150