IXYK100N120C3.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 IXYK100N120C3 데이타시트 다운로드

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1200V XPTTM IGBTs
GenX3TM
High-Speed IGBT
for 20-50 kHz Switching
Preliminary Technical Information
IXYK100N120C3
IXYX100N120C3
VCES =
IC110 =
V CE(sat)
tfi(typ) =
1200V
100A
3.5V
110ns
TO-264 (IXYK)
Symbol
VCES
VCGR
VGES
VGEM
IC25
ILRMS
IC110
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1MΩ
Continuous
Transient
1200
1200
±20
±30
V
V
V
V
TC = 25°C (Chip Capability)
Terminal Current Limit
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 1Ω
Clamped Inductive Load
TC = 25°C
188
160
100
490
50
1.2
ICM = 200
@VCE VCES
1150
-55 ... +175
175
-55 ... +175
A
A
A
A
A
J
A
W
°C
°C
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300 °C
260 °C
Mounting Torque (TO-264)
Mounting Force (PLUS247)
1.13/10
20..120 /4.5..27
Nm/lb.in.
N/lb.
TO-264
PLUS247
10 g
6g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC
=
IC110,
VGE
=
15V,
Note
1
TJ
=
150°C
Characteristic Values
Min. Typ. Max.
1200
V
3.0 5.0 V
25 μA
1.25 mA
±100 nA
2.9 3.5 V
4.1 V
G
C
E
PLUS247 (IXYX)
Tab
G
G
C
E
Tab
G = Gate
C = Collector
E = Emitter
Tab = Collector
Features
z Optimized for Low Switching Losses
z Square RBSOA
z Positive Thermal Coefficient of
Vce(sat)
z Avalanche Rated
z High Current Handling Capability
z International Standard Packages
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z High Frequency Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2013 IXYS CORPORATION, All Rights Reserved
DS100404A(03/13)

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Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs IC = 60A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = IC110, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = IC110, VGE = 15V
VCE = 0.5 • VCES, RG = 1Ω
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 125°C
IC = IC110, VGE = 15V
VCE = 0.5 • VCES, RG = 1Ω
Note 2
RthJC
RthCS
Characteristic Values
Min.
Typ. Max.
30 52
S
6000
353
130
pF
pF
pF
270 nC
50 nC
93 nC
32 ns
90 ns
6.50 mJ
123 ns
110 ns
2.90 5.00 mJ
32
90
10.10
140
125
3.55
ns
ns
mJ
ns
ns
mJ
0.13 °C/W
0.15 °C/W
IXYK100N120C3
IXYX100N120C3
TO-264 Outline
Terminals: 1 = Gate
2,4 = Collector
3 = Emitter
PLUS247TM Outline
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
Terminals: 1 - Gate
2 - Collector
3 - Emitter
Dim. Millimeter
Min. Max.
A 4.83 5.21
A1 2.29 2.54
A2 1.91 2.16
b 1.14 1.40
bb12
1.91 2.13
2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
e 5.45 BSC
L 19.81 20.32
L1 3.81 4.32
Q 5.59 6.20
R 4.32 4.83
Inches
Min. Max.
.190
.090
.075
.205
.100
.085
.045
.075
.115
.055
.084
.123
.024
.819
.620
.031
.840
.635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

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200
180
160
140
120
100
80
60
40
20
0
0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGE = 15V
13V
12V
11V
10V
9V
8V
7V
6V
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VCE - Volts
5.5
200
180
160
140
120
100
80
60
40
20
0
0
8.5
7.5
6.5
5.5
4.5
3.5
2.5
1.5
6
Fig. 3. Output Characteristics @ TJ = 125ºC
VGE = 15V
13V
12V
11V
10V
9V
8V
7V
6V
5V
12345678
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
TJ = 25ºC
I C = 200A
100A
50A
7 8 9 10 11 12 13 14 15
VGE - Volts
IXYK100N120C3
IXYX100N120C3
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
300
VGE = 15V
13V
250 12V
11V
10V
200
9V
150
100
50
0
0
8V
7V
6V
5 10 15 20 25
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
2.2
2.0 VGE = 15V
1.8
I C = 200A
1.6
1.4
1.2 I C = 100A
1.0
0.8
I C = 50A
0.6
0.4
-50
-25
0 25 50 75 100
TJ - Degrees Centigrade
125
150
200
180
160
140
120
100
80
60
40
20
0
3.5
Fig. 6. Input Admittance
TJ = - 40ºC
25ºC
125ºC
4.5 5.5 6.5 7.5 8.5
VGE - Volts
9.5
© 2013 IXYS CORPORATION, All Rights Reserved

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IXYK100N120C3
IXYX100N120C3
Fig. 7. Transconductance
90
80 TJ = - 40ºC
70
25ºC
60
125ºC
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180 200
IC - Amperes
16
14 VCE = 600V
I C = 100A
12 I G = 10mA
Fig. 8. Gate Charge
10
8
6
4
2
0
0 40 80 120 160 200 240 280
QG - NanoCoulombs
100,000
f = 1 MHz
10,000
Fig. 9. Capacitance
Cies
1,000
100
10
0
1
Coes
Cres
5 10 15 20 25 30 35 40
VCE - Volts
Fig. 10. Reverse-Bias Safe Operating Area
220
200
180
160
140
120
100
80
60
TJ = 150ºC
40 RG = 1
20 dv / dt < 10V / ns
0
200 300 400 500 600 700 800 900 1000 1100 1200 1300
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
0.3
aaaaaa
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

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Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
8
7 Eoff
Eon - - - -
TJ = 125ºC , VGE = 15V
6 VCE = 600V
5 I C = 100A
4
3
2 I C = 50A
1
0
123456789
RG - Ohms
16
14
12
10
8
6
4
2
0
10
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
4.5
Eoff Eon - - - -
4.0 RG = 1, VGE = 15V
VCE = 600V
3.5
I C = 100A
3.0
14
12
10
8
2.5 6
2.0 4
I C = 50A
1.5 2
1.0
25
50 75
TJ - Degrees Centigrade
100
0
125
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
170 220
t f i td(off) - - - -
150 RG = 1, VGE = 15V
VCE = 600V
130
200
180
110
TJ = 125ºC
160
90
TJ = 25ºC
70
140
120
50 100
50 55 60 65 70 75 80 85 90 95 100
IC - Amperes
IXYK100N120C3
IXYX100N120C3
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
4.5
Eoff Eon - - - -
4.0 RG = 1, VGE = 15V
VCE = 600V
3.5
TJ = 125ºC
3.0
14
12
10
8
2.5 6
2.0
TJ = 25ºC
4
1.5 2
1.0 0
50 55 60 65 70 75 80 85 90 95 100
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
160
t f i td(off) - - - -
140 TJ = 125ºC, VGE = 15V
VCE = 600V
500
400
120
I C = 100A
100
I C = 50A
300
200
80 100
60 0
1 2 3 4 5 6 7 8 9 10
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
170
t f i td(off) - - - -
150 RG = 1, VGE = 15V
VCE = 600V
130
220
200
180
110 160
I C = 50A, 100A
90 140
70 120
50
25
50 75 100
TJ - Degrees Centigrade
100
125
© 2013 IXYS CORPORATION, All Rights Reserved