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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
BZX84B2V4-BZX84B39 ZENER DIODES
FEATURES
z Planar Die Construction
z 300mW Power Dissipation
z Zener Voltages from 2.4V - 39V
z Ultra-Small Surface Mount Package Power Dissipation
SOT-23
MAXMUM RATINGS(Ta=25unless otherwise specified )
Characteristic
Symbol
Forward Voltage (Note 2)
@ IF = 10mA
VF
Power Dissipation(Note 1)
Pd
Thermal Resistance from Junction to Ambient
Junction Temperature
RθJA
Tj
Storage Temperature Range
Tstg
Value
0.9
300
417
150
-55~+150
Unit
V
mW
Я /W
Я
Я
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ELECTRICAL CHARACTERISTICS
T =25unless otherwise specified
Type
Number
Type
Code
Zener Voltage Range (Note 2)
Maximum Zener Impedance
(Note 3)
VZ@IZT
IZT
ZZT@IZT
ZZK@IZK
IZK
BZX84B2V4
BZX84B2V7
BZX84B3V0
BZX84B3V3
BZX84B3V6
BZX84B3V9
BZX84B4V3
BZX84B4V7
BZX84B5V1
BZX84B5V6
BZX84B6V2
BZX84B6V8
BZX84B7V5
BZX84B8V2
BZX84B9V1
BZX84B10
BZX84B11
BZX84B12
BZX84B13
BZX84B15
BZX84B16
BZX84B18
BZX84B20
BZX84B22
BZX84B24
BZX84B27
BZX84B30
BZX84B33
BZX84B36
BZX84B39
2Z11
2Z12
2Z13
2Z14
2Z15
2Z16
2Z17
2Z1
2Z2
2Z3
2Z4
2Z5
2Z6
2Z7
2Z8
2Z9
2Y1
2Y2
2Y3
2Y4
2Y5
2Y6
2Y7
2Y8
2Y9
2Y10
2Y11
2Y12
2Y13
2Y14
Nom(V)
2.4
2.7
3
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
Min(V)
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
10.78
11.76
12.74
14.70
15.68
17.64
19.60
21.56
23.52
26.46
29.40
32.34
35.28
38.22
Max(V)
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.20
11.22
12.24
13.26
15.30
16.32
18.36
20.40
22.44
24.48
27.54
30.60
33.66
36.72
39.78
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
100 600
100 600
95 600
95 600
90 600
90 600
90 600
80 500
60 480
40 400
10 150
15 80
15 80
15 80
15 100
20 150
20 150
25 150
30 170
30 200
40 200
45 225
55 225
55 250
70 250
80 300
80 300
80 325
90 350
130 350
mA
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
Notes:
1. Valid provided that device terminals are kept at ambient temperature.
2. Tested with pulses, period=5ms,pulse width =300μs.
3. f=1kHz.
Maximum
Reverse
Current
IR VR
μA V
50 1.0
20 1.0
10 1.0
5 1.0
5 1.0
3 1.0
3 1.0
3 2.0
2 2.0
1 2.0
3 4.0
2 4.0
1 5.0
0.7 5.0
0.5 6.0
0.2 7.0
0.1 8.0
0.1 8.0
0.1 8.0
0.1 10.5
0.1 11.2
0.1 12.6
0.1 14.0
0.1 15.4
0.1 16.8
0.1 18.9
0.1 21.0
0.1 23.1
0.1 25.2
0.1 27.3
Typical
Temperature
Coefficent
@IZT=5 mA
mV/°C
Min Max
-3.5 0
-3.5 0
-3.5 0
-3.5 0
-3.5 0
-3.5 0
-3.5 0
-3.5 0.2
-2.7 1.2
-2.0 2.5
0.4 3.7
1.2 4.5
2.5 5.3
3.2 6.2
3.8 7.0
4.5 8.0
5.4 9.0
6.0 10.0
7.0 11.0
9.2 13.0
10.4 14.0
12.4 16.0
14.4 18.0
16.4 20.0
18.4 22.0
21.4 25.3
24.4 29.4
27.4 33.4
30.4 37.4
33.4 41.2
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Typical Characteristics
Notes: Our company currently provide 5.1 V - 20 V products only
Zener Characteristics(V 5.1V to 20 V)
Z
100
PD =300mW
Ta =25
Pulsed
10
Temperature Coefficients
20
TYPICAL Ta VALUES
FOR BZX84BXXX SERIES
15
V @I
Z ZT
10
1
0.5
4 6 8 10 12 14 16 18 20 22
VZ, ZENER VOLTAGE (V)
Typical Leakage Current
0.1
Pulsed
0.01
Ta=100
1E-3
Ta=25
1E-4
4
1000
6 8 10 12 14 16 18 20
VZ, NOMINAL ZENER VOLTAGE (V)
Effect of Zener Voltage on Zener Impedance
22
Ta=25
IZ(AC)=0.1IZ(DC)
f=1kHz
100
10 IZ=5mA
IZ=1mA
1
4 6 8 10 12 14 16 18 20 22
VZ, NOMINAL ZENER VOLTAGE (V)
5
0
4 6 8 10 12 14 16 18 20 22
VZ, NOMINAL ZENER VOLTAGE (V)
Typical Capacitance
1000
Ta=25
f=1MHz
100 0V BIAS
1V BIAS
10 BIAS AT
50% OF VZ NOM
1
4
350
300
250
200
150
100
50
0
0
6 8 10 12 14 16 18 20 22
VZ, NOMINAL ZENER VOLTAGE (V)
Power Derating Curve
25 50 75 100 125
AMBIENT TEMPERATURE Ta ()
150
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SOT-23 Package Outline Dimensions
SOT-23 Suggested Pad Layout
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
Min Max
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950 TYP
1.800
2.000
0.550 REF
0.300
0.500
0° 8°
Dimensions In Inches
Min Max
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037 TYP
0.071
0.079
0.022 REF
0.012
0.020
8°
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SOT-23 Tape and Reel
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