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Product Summary
V(BR)DSS
30V
RDS(ON)
4.2@ VGS = 5V
2.8@ VGS = 10V
ID
TA = 25°C
200mA
260mA
Description
This new generation MOSFET has been designed to minimize the
on-state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
DC-DC Converters
Power management functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc
DMN63D8LV
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Dual N-Channel MOSFET
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT563
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
SOT563
D2 G1 S1
ESD PROTECTED
Top View
S2 G2 D1
Top View
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMN63D8LV-7
DMN63D8LV-13
Case
SOT563
SOT563
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
3D8 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Z = 2012)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan Feb
12
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
DMN63D8LV
Document number: DS36022 Rev. 2 - 2
1 of 6
www.diodes.com
August 2012
© Diodes Incorporated

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DMN63D8LV
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5)
Characteristic
VGS =10V
Continuous Drain Current (Note 5)
VGS = 5V
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Steady
State
Steady
State
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
Symbol
VDSS
VGSS
ID
ID
IDM
Value
30
±20
260
200
220
160
800
Units
V
V
mA
mA
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 5)
(Note 5)
Symbol
PD
RθJA
TJ, TSTG
Value
450
281
-55 to 150
Units
mW
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge VGS = 10V
Total Gate Charge VGS = 4.5V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol Min Typ
BVDSS 30
IDSS
⎯⎯
IGSS
⎯⎯
VGS(th)
RDS (ON)
gFS
VSD
0.8
80
-
0.8
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
22.0
3.2
2.0
79.9
0.87
0.43
0.11
0.11
3.3
3.2
12.0
6.3
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6 .Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
Max
1.0
±10.0
1.5
2.8
3.8
4.2
4.5
13
1.2
Unit Test Condition
V VGS = 0V, ID = 250μA
µA VDS = 30V, VGS = 0V
μA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250μA
VGS = 10.0V, ID = 250mA
VGS = 5.0V, ID = 250mA
Ω VGS = 4.5V, ID = 250mA
VGS = 4.0V, ID = 250mA
VGS = 2.5V, ID = 10mA
mS VDS = 10V, ID = 0.115A
V VGS = 0V, IS = 115mA
pF VDS = 25V, VGS = 0V, f = 1.0MHz
Ω VDS = 0V, VGS = 0V, f = 1.0MHz
nC VGS = 10V, VDS = 30V,
ID = 150mA
nS
VDD = 30V, ID = 0.115A, VGEN = 10V,
RGEN = 25Ω
DMN63D8LV
Document number: DS36022 Rev. 2 - 2
2 of 6
www.diodes.com
August 2012
© Diodes Incorporated

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DMN63D8LV
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
5
VGS = 10.0V
VGS = 4.5V
VGS = 4.0V
VGS = 3.0V
VGS = 2.5V
VGS = 2.0V
1234
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
5
4
VGS = 2.5V
3
VGS = 4.5V
2
VGS = 10V
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
10
VGS = 4.5V
8
TA = 150°C
6 TA = 125°C
0.6
0.5 VDS = 5.0V
0.4
0.3
0.2
0.1
0
0
5.0
4.5
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
1234
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
5
4.0
3.5
3.0
ID = 250mA
2.5 ID = 100mA
2.0
1.5 ID = 10mA
1.0
0
5 10 15 20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
1.6
VGS = 5.0V
ID = 300mA
1.4
VGS = 4.0V
ID = 200mA
1.2
4
TA = 85°C
1.0
2 TA = 25°C
TA = -55°C
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6 On-Resistance Variation with Temperature
DMN63D8LV
Document number: DS36022 Rev. 2 - 2
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© Diodes Incorporated

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5.0
4.5
4.0
3.5
3.0
2.5 VGS = 4.0V
ID = 200mA
2.0
1.5 VGS = 5.0V
ID = 300mA
1.0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 7 On-Resistance Variation with Temperature
0.8
0.7
0.6
0.5
0.4 TA = 150°C
TA = 125°C
0.3
TA = 85°C
0.2 TA = 25°C
TA = -55°C
0.1
0
0 0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
DMN63D8LV
2.0
1.8
1.6
ID = 1mA
1.4
1.2 ID = 250µA
1.0
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
DMN63D8LV
Document number: DS36022 Rev. 2 - 2
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DMN63D8LV
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
BC
D
G
K
SOT563
Dim Min Max Typ
A 0.15 0.30 0.20
B 1.10 1.25 1.20
C 1.55 1.70 1.60
D-
- 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
K 0.55 0.60 0.60
M L 0.10 0.30 0.20
M 0.10 0.18 0.11
All Dimensions in mm
H
L
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C2 C2
G
Z
Y
X
C1
Dimensions
Z
G
X
Y
C1
C2
Value (in mm)
2.2
1.2
0.375
0.5
1.7
0.5
DMN63D8LV
Document number: DS36022 Rev. 2 - 2
5 of 6
www.diodes.com
August 2012
© Diodes Incorporated