ESDBVD5V0Y1.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 ESDBVD5V0Y1 데이타시트 다운로드

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-02C-A Plastic-Encapsulate Diodes
ESDBVD5V0Y1 Bi-direction ESD Protection Diode
DESCRIPTION
Designed to protect voltage sensitive electronic components from ESD and other
transients. Excellent clamping capability, low leakage, low capacitance, and fast
response time provide best in class protection on designs that are exposed to ESD.
The combination of small size, low capacitance, and high level of ESD protection
makes them a flexible solution for applications such as HDMI, Display Port TM, and
MDDI interfaces. It is designed to replace multiplayer varistors (MLV) in consumer
equipments applications such as mobile phone, notebook, PAD, STB, LCD TV etc.
WBFBP-02C-A
FEATURES
z Bi-directional ESD protection of one line
z Low capacitance: 3pF(Typ.)
z Low reverse standoff voltage: 5V
z Low reverse clamping voltage
z Low leakage current
z Excellent package:1.0mm×0.6mm×0.5mm
z Fast response time
z JESD22-A114-B ESD Rating of class 3B per human
body model
z IEC 61000-4-2 Level 4 ESD protection
APPLICATIONS
z Computers and peripherals
z High speed data lines
z Audio and video equipment
z Cellular handsets and accessories
z Subscriber identity module(SIM) card protection
MARKING
z Portable electronics
z FireWire
z Other electronics equipments communi-
cation systems
HD = Device code
Front side
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CHANGJIANG ELEC.TECH.
MAXIMUM RATINGS ( Ta=25unless otherwise noted )
ESDBVD5V0Y1
Parameter
Symbol
Limit
IEC 61000-4-2 ESD Voltage
JESD22-A114-B ESD Voltage
Air Model
Contact Model
Per Human Body Model
VESD(1)
±15
±15
±16
ESD Voltage
Peak Pulse Power
Peak Pulse Current
Lead Solder Temperature Maximum (10 Second Duration)
Junction Temperature
Machine Model
PPP(2)
IPP(2)
TL
Tj
±0.4
52
4
260
150
Storage Temperature Range
Tstg -55 ~ +150
(1).Device stressed with ten non-repetitive ESD pulses.
(2).Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5.
Unit
kV
W
A
ESD standards compliance
IEC61000-4-2 Standard
Contact Discharge
Level Test Voltage kV
12
24
36
48
Air Discharge
Level Test Voltage kV
12
24
38
4 15
JESD22-A114-B Standard
ESD Class
0
1A
1B
1C
2
3A
3B
Human Body Discharge V
0249
250499
500999
10001999
20003999
40007999
800015999
ESD pulse waveform according to IEC61000-4-2
8/20μs pulse waveform according to IEC 61000-4-5
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CHANGJIANG ELEC.TECH.
ELECTRICAL PARAMETER
ESDBVD5V0Y1
Symbol
VC
IPP
VBR
IT
IR
VRWM
Parameter
Clamping Voltage @ IPP
Peak Pulse Current
Breakdown Voltage @ IT
Test Current
Reverse Leakage Current @ VRWM
Reverse Standoff Voltage
V-I characteristics for a Bi-directional TVS
ELECTRICAL CHARACTERISTICS(Ta=25unless otherwise specified)
Parameter
Reverse stand off voltage
Symbol
VRWM1
Test conditions
Min Typ Max
5
Reverse leakage current
IR VRWM=5V
1
Breakdown voltage
Clamping voltage
V(BR)
VC2
IT=1mA
IPP=4A
5.6 8
13
Junction capacitance
CJ VR=0V,f=1MHz
3
(1).Other voltages available upon request.
(2).Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5
Unit
V
μA
V
V
pF
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CHANGJIANG ELEC.TECH.
TYPICAL CHARACTERISTICS
100
Pulsed
75
50
25
Reverse Characteristics
Ta=25
0
Ta=100
-25
-50
-75
-100
-9
-6 -3 0 3
REVERSE VOLTAGE VR (V)
6
9
15
Ta=25
tp=8/20us
12
VC ---- IPP
9
6
3
1.0 1.5 2.0 2.5 3.0 3.5 4.0
REVERSE PEAK PULSE CURRENT IPP (A)
ESDBVD5V0Y1
Capacitance Characteristics
4
Ta=25
f=1MHz
3
2
1
0
012345
REVERSE VOLTAGE VR (V)
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CHANGJIANG ELEC.TECH.
PACKAGE OUTLINE AND PAD LAYOUT INFORMATION
WBFBP-02C-A 3DFNDJH 2XWOLQH 'LPHQVLRQV
ESDBVD5V0Y1
Symbol
A
A1
D
E
D1
E1
b
e
e1
L1
L2
WBFBP-02C-A 6XJJHVWHG 3DG /D\RXW
Dimensions In Millimeters
Min.
Max.
0.450
0.550
0.010
0.090
0.950
1.050
0.550
0.650
0.390REF.
0.400
0.500
0.420REF.
0.580
0.680
0.360REF.
0.050REF.
0.270
0.370
Dimensions In Inches
Min.
Max.
0.018
0.022
0.000
0.004
0.037
0.041
0.022
0.026
0.015REF.
0.016
0.020
0.017REF.
0.023
0.027
0.014REF.
0.002REF.
0.011
0.015
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