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SMBJ5.0D thru SMBJ188D, SMBJ5.0CD thru SMBJ18CD
www.vishay.com
Vishay General Semiconductor
Surface Mount TRANSZORB®
Transient Voltage Suppressors
DO-214AA (SMBJ)
PRIMARY CHARACTERISTICS
VBR (uni-directional)
VBR (bi-directional)
VWM (uni-directional)
VWM (bi-directional)
PPPM
PD at TM = 50 °C
PD at TA = 25 °C
TJ max.
Polarity
6.5 V to 228 V
6.5 V to 21.8 V
5.0 V to 188 V
5.0 V to 18 V
600 W
5.0 W
1.0 W
150 °C
Uni-directional, bi-directional
Package
DO-214AA (SMBJ)
DEVICES FOR BI-DIRECTIONAL
APPLICATIONS
For bi-directional devices use CD suffix (e.g. SMBJ5.0CD).
Electrical characteristics apply in both directions.
FEATURES
• Low profile package
• Ideal for automated placement
• ± 3.5 %: very tight VBR tolerance
• Low leakage current
• Available in uni-directional and bi-directional
• 600 W peak pulse power capability with a 10/1000 μs
waveform, repetitive rate (duty cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFETs, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMBJ)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
industrial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity: for uni-directional types the band denotes cathode
end, no cathode band on bi-directional types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation
with a 10/1000 μs waveform
Peak pulse current
with a 10/1000 μs waveform
Power dissipation
TM = 50 °C
TA = 25 °C
Operating junction and storage temperature range
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
(2) Power dissipation mounted on infinite heatsink
(3) Power dissipation mounted on minimum recommended pad layout
SYMBOL
PPPM (1)
IPPM (1)
PD (2)
PD (3)
TJ, TSTG
VALUE
600
See next table
5.0
1.0
-55 to +150
UNIT
W
A
W
°C
Revision: 26-Aug-15
1 Document Number: 87606
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SMBJ5.0D thru SMBJ188D, SMBJ5.0CD thru SMBJ18CD
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ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE TYPE
DEVICE
MARKING
CODE
UNI BI
BREAKDOWN
VOLTAGE
VBR AT IT (1)
(V)
MIN. MAX.
TEST
CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM (V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (μA) (2)
(+)SMBJ5.0D
6AA 6AA 6.50 6.97
10
5.0 500
(+)SMBJ6.0D
6AB 6AB 6.77 7.27
10
6.0 500
(+)SMBJ6.5D
6AC 6AC 7.33 7.87
10
6.5 300
(+)SMBJ7.0D
6AD 6AD 7.90 8.48
10
7.0 150
(+)SMBJ7.5D
6AE 6AE 8.46 9.08
1.0
7.5
75
(+)SMBJ8.0D
6AF 6AF 9.03 9.69
1.0
8.0
35
(+)SMBJ8.5D
6AG 6AG 9.57 10.3
1.0
8.5
15
(+)SMBJ9.0D
6AH 6AH 10.2 10.9
1.0
9.0
5.0
(+)SMBJ10D
6AK 6AK 11.3 12.1
1.0
10
2.0
(+)SMBJ11D
6AL 6AL 12.4 13.3
1.0
11
2.0
(+)SMBJ12D
6AM 6AM 13.5 14.5
1.0
12
2.0
(+)SMBJ13D
6AN 6AN 14.6 15.7
1.0
13
0.5
(+)SMBJ14D
6AP 6AP 15.8 17.0
1.0
14
0.5
(+)SMBJ15D
6AQ 6AQ 17.0 18.2
1.0
15
0.5
(+)SMBJ16D
6AR 6AR 18.1 19.4
1.0
16
0.5
(+)SMBJ17D
6AS 6AS 19.2 20.6
1.0
17
0.5
(+)SMBJ18D
6AT 6AT 20.3 21.8
1.0
18
0.5
(+)SMBJ20D
6AU -
22.5 24.2
1.0
20
0.5
(+)SMBJ22D
6AV -
24.8 26.6
1.0
22
0.5
(+)SMBJ24D
6AW -
27.1 29.1
1.0
24
0.5
(+)SMBJ26D
6AX -
29.3 31.5
1.0
26
0.5
(+)SMBJ28D
6AY -
31.6 33.9
1.0
28
0.5
(+)SMBJ30D
6AZ -
33.8 36.3
1.0
30
0.5
(+)SMBJ33D
6BA -
37.3 40.0
1.0
33
0.5
(+)SMBJ36D
6BB -
40.6 43.6
1.0
36
0.5
(+)SMBJ40D
6BC -
45.1 48.4
1.0
40
0.5
(+)SMBJ43D
6BD -
48.5 52.1
1.0
43
0.5
(+)SMBJ45D
6BE -
50.8 54.5
1.0
45
0.5
(+)SMBJ48D
6BF -
54.1 58.1
1.0
48
0.5
(+)SMBJ51D
6BG -
57.6 61.8
1.0
51
0.5
(+)SMBJ54D
6BH -
60.9 65.4
1.0
54
0.5
(+)SMBJ58D
6BK -
65.4 70.2
1.0
58
0.5
(+)SMBJ60D
6BL -
67.7 72.7
1.0
60
0.5
(+)SMBJ64D
6BM -
72.2 77.5
1.0
64
0.5
(+)SMBJ70D
6BN -
79.0 84.8
1.0
70
0.5
(+)SMBJ75D
6BP -
84.6 90.8
1.0
75
0.5
(+)SMBJ78D
6BQ -
88.1 94.4
1.0
78
0.5
(+)SMBJ85D
6BR -
95.7 103
1.0
85
0.5
(+)SMBJ90D
6BS -
102 109
1.0
90
0.5
(+)SMBJ100D
6BT -
113 121
1.0
100
0.5
(+)SMBJ110D
6BU -
124 133
1.0
110
0.5
(+)SMBJ120D
6BV -
135 145
1.0
120
0.5
(+)SMBJ130D
6BW -
146 157
1.0
130
0.5
(+)SMBJ150D
6BX -
170 182
1.0
150
0.5
(+)SMBJ160D
6BY -
181 194
1.0
160
0.5
(+)SMBJ170D
6BZ -
192 206
1.0
170
0.5
SMBJ188D
6CA -
212 228
1.0
188
0.5
MAXIMUM
PEAK PULSE
SURGE
CURRENT
IPPM (A) (3)
65.9
58.9
54.5
50.8
47.2
44.8
42.2
39.7
35.9
33.5
30.6
28.3
26.2
25.0
23.4
22.1
20.8
18.8
17.1
15.6
14.5
13.4
12.6
11.5
10.5
9.43
8.76
8.40
7.90
7.40
7.00
6.50
6.28
5.88
5.40
5.06
4.86
4.46
4.17
3.77
3.45
3.15
2.94
2.53
2.34
2.23
2.03
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
VC (V)
9.1
10.2
11.0
11.8
12.7
13.4
14.3
15.1
16.7
17.9
19.6
21.2
22.9
24.0
25.6
27.2
28.8
32.0
35.1
38.4
41.6
44.7
47.7
52.5
57.3
63.6
68.5
71.6
76.3
81.2
85.9
92.3
95.5
102
111
119
124
135
144
159
174
190
206
239
256
270
301
Notes
• All terms and symbols are consistent with ANSI/IEEE C62.35
(1) Pulse test: tp 50 ms
(2) For bi-directional types having VWM of 12 V and less, the ID limit is doubled
(3) Surge current waveform per fig. 3 and derate per fig. 2
(+) Underwriters Laboratory Recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number
E136766 for both uni-directional and bi-directional device
Revision: 26-Aug-15
2 Document Number: 87606
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SMBJ5.0D thru SMBJ188D, SMBJ5.0CD thru SMBJ18CD
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Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance, junction to ambient
RJA (1)
RJA (2)
Typical thermal resistance, junction to mount
RJM
Notes
(1) Mounted on minimum recommended pad layout
(2) Mounted on 5.0 mm x 5.0 mm copper pad area
VALUE
125
100
20
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
SMBJ5.0D-M3/H
0.096
H
SMBJ5.0D-M3/I
0.096
I
BASE QUANTITY
750
3200
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
10 150
tr = 10 μs
TJ = 25 °C
pulse width (td) is de ned
as the point where the peak
current decays to 50 % of IPPM
100 Peak value IPPM
1 Half value - IPP/2
0.2" x 0.2" (5.0 mm x 5.0 mm)
copper pad areas
0.1
10 100 1000
td - Pulse Width (μs)
10 000
Fig. 1 - Peak Pulse Power Rating Curve
50
10/1000 μs waveform
as de ned by R.E.A.
0 td
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
tp - Time (ms)
Fig. 3 - Pulse Waveform
100 10 000
Measured at zero bias
75 1000
50
25
0
0 25 50 75 100 125 150
TJ - Initial Temperature (°C)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
100 Measured at stand-off
voltage, VWM
10
1
1
Uni-directional
Bi-directional
TJ = 25 °C
f = 1.0 MHz
10 100 200
VWM - Reverse Stand-Off Voltage (V)
Fig. 4 - Typical Junction Capacitance
Revision: 26-Aug-15
3 Document Number: 87606
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SMBJ5.0D thru SMBJ188D, SMBJ5.0CD thru SMBJ18CD
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Vishay General Semiconductor
6
TA=TM mounted on inifinite heatsink
5
4
1000
100
Junction to Ambient
Mounted on minimum
recommend pad area
3 10
2 Mounted on minimum
recommend pad layout
1
0
0 25 50 75 100 125 150
TA - Ambient Temperature (°C)
Fig. 5 - Power Dissipation Derating Curve
1
0.1
0.001
Mounted on 5.0 x 5.0 mm
copper pad area
0.1 10
1000
tp - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Note
• Fig.1, 10 000 μs Pppm is actual test for VWM 60 V types, over 60 V types 10 000 μs Pppm is curve extensional value.
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMBJ)
Cathode Band
0.086 (2.20)
0.077 (1.95)
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.180 (4.57)
0.160 (4.06)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
0.155 (3.94)
0.130 (3.30)
0.012 (0.305)
0.006 (0.152)
Mounting Pad Layout
0.086 (2.18)
MIN.
0.085 (2.159)
MAX.
0.060 (1.52)
MIN.
0.220 REF.
Revision: 26-Aug-15
4 Document Number: 87606
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Revision: 02-Oct-12
1 Document Number: 91000