35N08.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 35N08 데이타시트 다운로드

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
35N08
·FEATURES
·Drain Current ID= 35A@ TC=25
·Drain Source Voltage-
: VDSS= 80V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.055Ω(Max)
·Fast Switching
·APPLICATIONS
·Switching power supplies,converters,AC and DC motor controls
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
80
±30
V
V
ID Drain Current-Continuous
35 A
IDM Drain Current-Single Plused
100 A
PD Total Dissipation @TC=25
150 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
0.83 /W
isc websitewww.iscsemi.cn
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
35N08
·ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID=1mA
VGS(th) Gate Threshold Voltage
VSD Diode Forward On-voltage
VDS= VGS; ID=1mA
IS= 17.5A ;VGS= 0
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VGS= 10V; ID= 17.5A
VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS=65V; VGS= 0
Ciss Input Capacitance
Crss Reverse Transfer capacitance
Coss Output Capacitance
VDS=25V;
VGS=0V;
fT=1MHz
tr Rise Time
td(on)
Turn-on Delay Time
tf Fall Time
td(off)
Turn-off Delay Time
VGS=10V;
ID=17.5A;
VDD=50V;
RL=50Ω
MIN TYPE MAX UNIT
80 V
2.0 4.0 V
1.4 V
0.055 Ω
±100 nA
1 µA
3000
600 pF
1500
225 450
40 100
ns
165 350
240 450
·
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
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