42N20.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 42N20 데이타시트 다운로드

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
42N20
·FEATURES
·Drain Current ID= 42A@ TC=25
·Drain Source Voltage-
: VDSS= 200V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.055Ω(Max)
·Fast Switching
·APPLICATIONS
·Switching power supplies,converters,AC and DC motor controls
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
200
±30
V
V
ID Drain Current-Continuous
42 A
IDM Drain Current-Single Plused
168 A
PD Total Dissipation @TC=25
300 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
0.63 /W
62.5 /W
isc websitewww.iscsemi.cn
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
42N20
·ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD Diode Forward On-voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
Ciss Input Capacitance
Crss Reverse Transfer capacitance
Coss Output Capacitance
tr Rise Time
td(on)
Turn-on Delay Time
tf Fall Time
td(off)
Turn-off Delay Time
CONDITIONS
VGS= 0; ID=250µA
VDS= VGS; ID=250µA
IS= 40A ;VGS= 0
VGS= 10V; ID= 26A
VGS= ±20V;VDS= 0
VDS=160V; VGS= 0
VDS=25V;
VGS=0V;
fT=1MHz
VGS=10V;
ID=21A;
VDD=100V;
RL=2Ω
MIN TYPE MAX UNIT
200 V
3.0 5.5 V
2.5 V
0.055 Ω
±100 nA
200 µA
4600
285 pF
800
15 20
18 25
ns
16 25
72 90
·
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
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