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UNISONIC TECHNOLOGIES CO., LTD
60N05
Preliminary
60A, 50V N-CHANNEL
POWER MOSFET
„ DESCRIPTION
The UTC 60N05 is an N-channel power MOSFET using UTC’s
advanced technology to provide the customers with perfect RDS(ON),
high switching speed, high current capacity and low gate charge.
The UTC 60N05 is suitable for motor control, AC-DC or DC-DC
converters and audio amplifiers, etc.
„ FEATURES
* RDS(ON)=12m@ VGS=10V,ID=30A
* High Switching Speed
* High Current Capacity
* Low Gate Charge(typical 130nC)
„ SYMBOL
Power MOSFET
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
60N05L-TA3-T
60N05G-TA3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
Pin Assignment
123
GDS
Packing
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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60N05
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (VGS=0)
VDSS 50 V
Drain-Gate Voltage (RGS=20k ) VDGR 50 V
Gate-Source Voltage
VGSS ±20 V
Drain Current
Continuous
TC=25°C
TC=100°C
ID
60 A
50 A
Pulsed (Note 1)
IDM
240 A
Avalanche Current
Avalanche Energy
IAR 60 A
EAS 600 mJ
EAR 150 mJ
Power Dissipation
Junction Temperature
PD 125 W
TJ 150 °C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by safe operating area
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
62.5
1
UNIT
°C/W
°C/W
„ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=Max Rating, VGS=0V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=30A
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
MIN TYP MAX UNIT
60 V
250 µA
+100 nA
-100 nA
234 V
0.012 0.014
3900
950
250
pF
pF
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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60N05
Preliminary
Power MOSFET
„ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Fall-Time
Off-Voltage Rise Time
QG
QGS
QGD
tD(ON)
tR
tF
tR(OFF)
VGS=10V, VDD=40V, ID=60A
VDD=25V, ID=30A, RG=4.7,
VGS=10V
VDD=40V, ID=60A, RG=4.7,
VGS=10V
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS (Note 1)
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD ISD=60A, VGS=0V (Note 2)
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr ISD=60A, VDD=30V, TJ=150°C,
QRR di/dt=100A/µs
Notes: 1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration=300µs, Duty cycle 1.5%
MIN TYP MAX UNIT
130 170
26
55
30
180
35
135
nC
nC
nC
ns
ns
ns
ns
60
240
1.6
150
0.56
A
A
V
ns
µC
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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