2SK2221.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 2SK2221 데이타시트 다운로드

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2SK2220, 2SK2221
Silicon N Channel MOS FET
Application
Low frequency power amplifier
Complementary pair with 2SJ351, 2SJ352
Features
High power gain
Excellent frequency response
High speed switching
Wide area of safe operation
Enhancement-mode
Good complementary characteristics
Equipped with gate protection diodes
Outline
REJ03G1004-0200
(Previous: ADE-208-1352)
Rev.2.00
Sep 07, 2005
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
1. Gate
G 2. Source
(Flange)
3. Drain
1
2
3
S
Rev.2.00 Sep 07, 2005 page 1 of 5

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2SK2220, 2SK2221
Absolute Maximum Ratings
Item
Drain to source voltage
2SK2220
2SK2221
Gate to source voltage
Drain current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note: 1. Value at Tc = 25°C
Electrical Characteristics
Symbol
VDSX
VGSS
ID
IDR
Pch*1
Tch
Tstg
Item
Drain to source
2SK2220
breakdown voltage
2SK2221
Gate to source breakdown voltage
Gate to source cutoff voltage
Drain to source saturation voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Note: 2. Pulse Test
Symbol
V(BR)DSX
V(BR)GSS
VGS(off)
VDS(sat)
|yfs|
Ciss
Coss
Crss
ton
toff
Min
180
200
±20
0.15
0.7
Typ
1.0
600
800
8
250
90
Ratings
180
200
±20
8
8
100
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
W
°C
°C
Max
1.45
12
1.4
(Ta = 25°C)
Unit Test conditions
V ID = 10 mA, VGS = –10 V
V IG = ±100 µA, VDS = 0
V ID = 100 mA, VDS = 10 V
V ID = 8 A, VGD = 0 V*2
S ID = 3 A, VDS = 10 V*2
pF VGS = –5 V, VDS = 10 V,
pF f = 1 MHz
pF
ns VDD = 30 V, ID = 4 A
ns
Rev.2.00 Sep 07, 2005 page 2 of 5

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2SK2220, 2SK2221
Main Characteristics
Power vs. Temperature Derating
150
100
50
0 50 100 150
Case Temperature TC (°C)
Typical Output Characteristics
10
VGS =
10 V
8
9
8
7
TC = 25°C
6
6
Pch = 125 W
5
44
3
2
2
01
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
10
8 VDS = 10 V
6 75
4
2
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 5
Maximum Safe Operation Area
20
Ta = 25°C
10
5
2
1.0
0.5
0.2
5
2SK2220 2SK2221
10 20 50 100 200 500
Drain to Source Voltage VDS (V)
Typical Output Characteristics
10
TC = 25°C
8
6
VGS = 10 V
98
7
6
5
44
3
2
2
10
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
1.0
0.8 VDS = 10 V
0.6
0.4
0.2
0 0.4 0.8 1.2 1.6 2.0
Gate to Source Voltage VGS (V)

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2SK2220, 2SK2221
Forward Transfer Admittance
vs. Frequency
5
1.0
0.1
0.01
TC = 25°C
VDS = 10 V
ID = 2 A
0.001
0.0005
2k
10 k 100 k 1 M
Frequency f (Hz)
10 M 20 M
Switching Time Test Circuit
Output
RL
Input
PW = 50 µs
duty ratio
= 1%
50
30 V
Switching Time vs. Drain Current
500
t on
200
100
50
t off
20
10
5
0.1 0.2
0.5 1.0 2
5
Drain Current ID (A)
10
Input
10%
t on
Output
90%
Waveforms
90%
t off
10%
Rev.2.00 Sep 07, 2005 page 4 of 5

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2SK2220, 2SK2221
Package Dimensions
JEITA Package Code
SC-65
RENESAS Code
PRSS0004ZE-A
Package Name
TO-3P / TO-3PV
15.6 ± 0.3
φ3.2 ± 0.2
MASS[Typ.]
5.0g
4.8 ± 0.2
1.5
Unit: mm
1.6
1.4 Max
2.0
2.8
1.0 ± 0.2
3.6 0.9
1.0
5.45 ± 0.5
5.45 ± 0.5
0.6 ± 0.2
Ordering Information
Part Name
Quantity
Shipping Container
2SK2220-E
360 pcs
Box (Tube)
2SK2221-E
360 pcs
Box (Tube)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Sep 07, 2005 page 5 of 5