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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF251
DESCRIPTION
·Drain Current ID=30A@ TC=25
·Drain Source Voltage-
: VDSS= 150V(Min)
·Static Drain-Source On-Resistance
: RDS(on) =0.085Ω(Max)
·Nanosecond Switching Speed
APPLICATIONS
·Switching power supplies
·Switching converters,motor driver,relay driver
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
150
±20
V
V
Drain Current-continuous@ TC=2530 A
Total Dissipation@TC=25
150 W
Max. Operating Junction Temperature
150
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
0.83
30
/W
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF251
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS(TH) Gate Threshold Voltage
VGS=0; ID=250µA
VDS= VGS; ID=250µA
RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=16A
IGSS Gate Source Leakage Current
VGS=±20V;VDS=0
IDSS Zero Gate Voltage Drain Current
VDS=150V; VGS=0
VSD Diode Forward Voltage
IS=30A; VGS=0
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
VDS=25V;
VGS=0V;
fT=1MHz
tr Rise Time
td(on)
Turn-on Delay Time
tf Fall Time
ID=16A;
VDD=95V;
RL=4.7Ω
td(off)
Turn-off Delay Time
MIN TYPE MAX UNIT
150 V
2 4V
0.085 Ω
±100 nA
250 uA
2.0 V
2000 3000
300 500 pF
800 1200
100
35
ns
100
125
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn