IRF1404.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 IRF1404 데이타시트 다운로드

No Preview Available !

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF1404
FEATURES
·Drain Current –ID= 162A@ TC=25
·Drain Source Voltage-
: VDSS= 40V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.004Ω(Max)
·Fast Switching
Description
Seventh Generation HEXFET ® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
40
±20
V
V
ID Drain Current-Continuous
162 A
IDM Drain Current-Single Pluse
650 A
PD Total Dissipation @TC=25
200 W
TJ Max. Operating Junction Temperature 175
Tstg Storage Temperature
-55~175
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
0.75 /W
62 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

No Preview Available !

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF1404
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBO
L
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VGS= 10V; ID= 95A
VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS= 40V; VGS= 0
VSD Forward On-Voltage
IS= 95A; VGS=0
Gfs Forward Transconductance
VDS= 25VID= 60A
MIN TYPE MAX UNIT
40 V
2 4V
0.004 Ω
±200 nA
20 μA
1.3 V
106 S
·
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark