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IRF640PBF
®
IRF640PBF
Pb Free Plating Product
Pb
18A,200V Heatsink N-Channel Type Power MOSFET
Features
̰ RDS(on) (Max 0.18 ˟ )@VGS=10V
̰ Gate Charge (Typical 44nC)
̰ Improved dv/dt Capability
̰ High ruggedness
̰ 100% Avalanche Tested
1.Gate
2.Drain
3.Source
BVDSS = 200V
RDS(ON) = 0.18 ohm
ID = 18A
General Description
This N-channel enhancement mode field-effect power transistor
using THINKI Semiconductor advanced planar stripe, DMOS technol-
ogy intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged
avalanche characteristics. The TO-220C pkg is well suited for
adaptor power unit and small power inverter application.
TO-220C
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
RTJC
RTCS
RTJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Min.
-
-
-
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
200
18
11
72
±30
220
13.5
5.5
135
1.11
- 55 ~ 150
300
Value
Typ.
-
0.5
-
Max.
0.9
-
62.5
23
1
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
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IRF640PBF
®
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Off Characteristics
Test Conditions
BVDSS Drain-Source Breakdown Voltage
ȟ BVDSS/ Breakdown Voltage Temperature
ȟ TJ coefficient
IDSS Drain-Source Leakage Current
IGSS
Gate-Source Leakage, Forward
Gate-source Leakage, Reverse
On Characteristics
VGS = 0V, ID = 250uA
ID = 250uA, referenced to 25 °C
VDS = 200V, VGS = 0V
VDS = 160V, TC = 125 °C
VGS = 25V, VDS = 0V
VGS = -25V, VDS = 0V
VGS(th) Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-state Resis-
tance
Dynamic Characteristics
VDS = VGS, ID = 250uA
VGS =10 V, ID = 9A
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Dynamic Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Qgd Gate-Drain Charge(Miller Charge)
VGS =0 V, VDS =25V, f = 1MHz
VDD =100V, ID =18A, RG =25˟
see fig. 13.
(Note 4, 5)
VDS =160V, VGS =10V, ID =18A
see fig. 12.
(Note 4, 5)
Min
200
-
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
Typ Max Units
--
0.26
-
-1
- 10
- 100
- -100
V
V/°C
uA
uA
nA
nA
-
0.15
4.0
0.18
V
˟
1010
190
80
1300
240
110
pF
15 30
80 150
50 90
ns
60 120
44 55
10 - nC
18 -
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Test Conditions
IS
Continuous Source Current
Integral Reverse p-n Junction
ISM
Pulsed Source Current
Diode in the MOSFET
VSD
Diode Forward Voltage
IS =18A, VGS =0V
trr Reverse Recovery Time
Qrr
Reverse Recovery Charge
IS=18A, VGS=0V, dIF/dt=100A/us
NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L =1mH, IAS =18A, VDD = 50V, RG = 50˟ , Starting TJ = 25°C
3. ISD ˺ 18A, di/dt ˺ 300A/us, VDD ˺ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ˺ 300us, Duty Cycle ˺ 2%
5. Essentially independent of operating temperature.
Min.
-
-
-
-
-
Typ.
-
-
-
190
1.3
Max.
18
72
1.5
-
-
Unit.
A
V
ns
uC
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
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IRF640PBF
®
Fig 1. On-State Characteristics
Top :
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
101 6.0 V
5.5 V
Bottom : 5.0 V
100
10-1
10-1
Notes :
1. 250μ s Pulse Test
2. TC = 25
100
VDS, Drain-Source Voltage [V]
101
Fig 3. On Resistance Variation vs.
Drain Current and Gate Voltage
0.4
Fig 2. Transfer Characteristics
101
100
10-1
2
150oC
25oC
-55oC
Notes :
1. VDS = 30V
2. 250μ s Pulse Test
468
VGS, Gate-Source Voltage [V]
10
Fig 4. On State Current vs.
Allowable Case Temperature
0.3
VGS = 10V
0.2
0.1 VGS = 20V
0.0
0
Note : TJ = 25
20 40 60 80
ID, Drain Current [A]
Fig 5. Capacitance Characteristics
2500
2000
1500
1000
Coss
Ciss
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
Notes :
1. VGS = 0V
2. f=1MHz
500
0
0
C
rss
5 10 15 20 25 30
VDS, Drain-Source Voltage [V]
35
40
101
100 15025
Notes :
1. VGS = 0V
2. 250μ s Pulse Test
10-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-Drain voltage [V]
Fig 6. Gate Charge Characteristics
12
VDS = 200V
10 VDS = 125V
8 VDS = 50V
6
4
2
Note : ID = 9A
0
0 10 20 30 40 50
QG, Total Gate Charge [nC]
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
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IRF640PBF
®
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
1.2
Fig 8. On-Resistance Variation
vs. Junction Temperature
3.0
2.5
1.1
2.0
1.0
0.9 Notes :
1. VGS = 0 V
2. ID = 250 μ A
0.8
-100
-50 0 50 100 150
TJ, Junction Temperature [oC]
Fig 9. Maximum Safe Operating Area
200
1.5
1.0
0.5
0.0
-100
Notes :
1. VGS = 10 V
2. ID = 9 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Fig 10. Maximum Drain Current
vs. Case Temperature
Operation in This Area
is Limited by R DS(on)
102
101
100 Ps
1 ms
10 ms
DC
20
15
10
100
Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
10-1
100
101 102
VDS, Drain-Source Voltage [V]
5
0
103 25 50
Fig 11. Transient Thermal Response Curve
75 100 125
TC' Case Temperature [oC]
150
100
D = 0 .5
0.2
1 0 -1
0.1
0.05
0 .0 2
0.01
1 0 -2
1 0 -5
N otes :
1 . Z ș JC(t) = 0 .9 0 /W M a x .
2. D uty Factor, D =t1/t2
3 . T JM - T C = P D M * Z ș JC( t)
single pulse
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t , S quare W ave P ulse D uration [sec]
101
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
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IRF640PBF
®
Fig. 12. Gate Charge Test Circuit & Waveforms
12V 200nF 50KO
Same Type
as DUT
VGS
300nF
VGS
VDS
Qgs
DUT
1mA
Qg
Qgd
Charge
Fig 13. Switching Time Test Circuit & Waveforms
VDS
10V
Pulse
RG
Generator
RL
VDD
(0.5 rated VDS)
DUT
VDS 90%
10%
Vin
td(on)
tr
ton
td(off)
tf
toff
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
10V
VDS
ID
RG
L
DUT
VDD
1 BVDSS
EAS = LL IAS2
2 BVDSS - VDD
BVDSS
IAS
ID(t)
tp
VDS(t)
Time
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 5/6
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