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The innovative Semiconductor Company!
HVV1214-100 High Voltage, High Ruggedness
TM L-Band Radar Pulsed Power Transistor
1200-1400 MHz, 200μs Pulse, 10% Duty
For Ground Based Radar Applications
Features
• Silicon MOSFET Technology
• Operation from 24V to 50V
• High Power Gain
• Extreme Ruggedness
• Internal Input and Output Matching
• Excellent Thermal Stability
• All Gold Bonding Scheme
TYPICAL PERFORMANCE
High voltage vertical technology is well suited for high power pulsed applications in the
L-Band including G-DME,A-DME, IFF, TCAS and Mode-S applications.
MODE
FREQUENCY
(MHz)
VDD
(V)
IDQ Power GAIN
(mA)
(W)
(dB)
η IRL VSWR
(%) (dB)
Class AB
1400
50 100 120 20
45 -8 20:1
Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with RF pulse conditions of
pulse width = 200µs and pulse period = 2ms.
DESCRIPTION
The high power HVV1214-100 device is an enhancement mode RF MOSFET power transistor designed for
pulsed applications in the L-Band from 1200MHz to 1400MHz. The high voltage HVVFET™ technology
produces over 100W of pulsed output power while offering high gain,high efficiency,and ease of matching
with a 50V supply. The vertical device structure assures high reliability and ruggedness as the device is
specified to withstand a 20:1 VSWR at all phase angles under full rated output power.
ORDERING INFORMATION
Device Part Number: HVV1214-100
Demo Kit Part Number: HVV1214-100-EK
Available through Richardson Electronics (http://rfwireless.rell.com/)
HVVi Semiconductors, Inc.
10235 S. 51st St. Suite 100
Phoenix, AZ. 85044
ISO 9001:2000 Certified
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-DS06A
12/11/08
1

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HVV1214-100 HighThVeoinltnaogvea,tiHveiSgehmRicoungdguecdtonreCsosmpany!
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VGS(Q)2
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Drain-SourceBreakdown
DGPIDnorrapaawtueiienntrLLEReGefeafaatikcuiknairaegngneecLyCoCsuusrrrreenntt
GateQuiescent Voltage
Conditions 
VGS=0V,ID=5mA
VVFFF===GG111SS444==00005000VVMMM,,VVHHHDDzzzSS==500VV
VDD=50V,IDQ=100mA
VTH
Threshold Voltage
VDD=5V, ID=300µA
PULSE CHARACTERISTICS
Min
95
-
-
18
-
43
1.1
0.7


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102 -
524-18005
2-50--50
1.45 1.8
1.2 1.7

Unit
V
µμdd%BBAA
 V
V
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
 TSry1mbol
RPiasreaTmimeeter
FC=o1n4d0i0tiMonHsz
Tf1
Fall Time
F=1400MHz
TPDH1ERMAPuLlsePDErRooFpORMANCE F=1400MHz


Min--Ty<<p21ic55alMa55x00
-  0.35  0.5


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
nS
nS

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
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TTHhEeRrMmAaLlPPEERRFFOORRMMANACNECE

   


 

RUGGEDNESS PERFORMANCE
RRUUGGGGEEDDNNEESSSSPPEREFROFROMRAMNACNE CE
















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2.) NOTE: Amount of gate voltage required to attain nominal quiescent current.
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Phoenix, Az. 85044
ISIOSO9090010:12:0200000CCeretritfiifeiedd
© 2©TTT0ee0e2l:ll80::(80(H(8868V666HV66) V)i)4S424Ve292im99-ISH-S-iHHecVOmoVVVn9iiVVc0d(o4ii0un8((1c4d48:t82u84o80c8)rt404soo,)0)rrIsnooCv,rrcieIs.vvnrAiitticsisl.fwliiittARewwwdilglwwwhR.wwhtisgv..hhRhvvvtie.svvcsiioRe..ccrmevoosemmedrv. ed.
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.
EEGG-0-011-D-DSS0606AA
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The innovative Semiconductor Company!
HVV1214-100 High Voltage,HHViVgh12R1u4g-1g0e0dnHeisgsh Voltage, High Ruggedness
L-Band Radar Pulsed TPM ower TLr-aBnasnidstRoardar Pulsed Power Transistor
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Zo = 10
ZIN*
ZOUT*
1200MHz
1200MHz
HVVi Semiconductors, Inc.
10235 S. 51st St. Suite 100
HPhVoVeni iSxe, mAzi.co85n0d4u4ctors, Inc.
10235 S. 51st St. Suite 100
Phoenix, AZ. 85044
ISO 9001:2000 Certified
©Te2l0:0(886H6V) 4V2i9SI-SHeOmViV9co0in0(d41u8:c82t40o)r0so0,rIvCnices.irtAtwilfliweRwdig.hhvtsviR.ceosmerved.
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.
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HVV1214-100 High Voltage, High Ruggedness
L-Band Radar Pulsed Power Transistor
1F2o0r0G-1r4o0u0ndMBHazs,e2d0R0aµTdshaePrinuAnlospvepa,Hlti1iVvc0eVa%S1tei2om1Dn4ics-uo1nt0yd0uHctiogrhCoVmoplatnayg! e, High Ruggedness
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HVV1214-100 Demonstration Circuit Board Bill of Materials
HVVi SemicoHndVuctVor1s, 2In1cH. 4V-V1102104-D10e0mDoemnsotnrIsSatOrtai9ot0i0on1n:2CC00iir0rccCuueirtititBfieoBdaordaBrdill BofilMl aotferMialasterials EG-01-DS06A
10235 S. 51st St. Suite 100
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
12/12/08
Phoenix, Az. 85044
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.
4
HVVi Semiconductors, Inc.
10235 S. 51st St. Suite 100
Phoenix, AZ. 85044
ISO 9001:2000 Certified
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-DS06A
12/11/08
4
HVVi Semiconductors, Inc.
10235 S. 51st St. Suite 100
ISO 9001:2000 Certified
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
EG-01-DS06A
12/12/08

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The innovative Semiconductor Company!
HVV1214-100 High Voltage, High Ruggedness
TM L-Band Radar Pulsed Power Transistor
HVV1214-100 High Voltage1,2H00ig-1h40R0uMgHgze,d2n00eμsss Pulse, 10% Duty
L-Band Radar Pulsed Power FTorraGnrsoiustnodrBased Radar Applications
1200-1400 MHz, 200µs Pulse, 10% Duty
FoPrAGCrKoAuGnEdDBIaMsEedNSRIaOdNaSr Applications
PACKAGE DIMENSIONS
GATE
DRAIN
SOURCE
Note: Drawing is not actual size.
Note: Drawing is not actual size.
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the accuracy or completeness of such information and shall have no liability for the consequences of use
of such information. Use of HVVi products as critical components in life support systems is not
authorized. No licenses, either express or implied, are conveyed under any HVVi intellectual property
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of
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SemiconduEcGt-o0r1s-,DS06A
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© 2008 HVVi Semiconductors, Inc. All Rights Reserved.
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HVVi Semiconductors, Inc.
10235 S. 51st St. Suite 100
ISO 9001:2000 Certified
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
EG-01-DS06A
12/12/08