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DMP3050LVT
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
-30V
RDS(ON) Max
50mΩ @ VGS = -10V
75m@ VGS = -4.5V
ID Max
TA = +25°C
-4.5A
-3.7A
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Backlighting
Power Management Functions
DC-DC Converters
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.013grams (Approximate)
TSOT26
Top View
D1
D2
G3
6D
5D
4S
Device Schematic
D
G
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
Case
Packaging
DMP3050LVT-7
TSOT26
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
G64
G64 = Product Type Marking Code
YM = Date Code Marking
Y or Y= Year (ex: D = 2016)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
~
~
Feb
2
Mar
3
2016
D
Apr
4
DMP3050LVT
Document number: DS35748 Rev. 4 - 2
2017
E
May
5
2018
F
Jun Jul
67
2019
G
Aug
8
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2020
H
Sep
9
2021
I
Oct Nov
ON
2022
J
Dec
D
April 2016
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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage (Note 5)
Continuous Drain Current (Note 6) VGS = -10V
Steady
State
t<10s
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%)
TA = +25C
TA = +70C
TA = +25C
TA = +70C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
DMP3050LVT
Value
-30
±25
-4.5
-3.5
-5.2
-4.1
-2
-25
Unit
V
V
A
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
TA = +25°C
TA = +70°C
Steady State
t<10s
Steady State
Symbol
PD
RJA
RJC
TJ, TSTG
Value
1.6
1.0
78
49
13
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
Min
-30
-
-
-1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
36
56
7.2
-0.7
620
83
62
10.8
5.1
10.5
1.8
1.9
6.8
4.9
28.4
12.4
Notes:
5. AEC-Q101 VGS maximum is ±20V.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Max
-
-1
±100
-2.0
50
75
-
-1.0
-
-
-
-
-
-
-
-
-
-
-
-
Unit
Test Condition
V VGS = 0V, ID = -250μA
μA VDS = -30V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = -250μA
mVGS = -10V, ID = -4.5A
VGS = -4.5V, ID = -3A
S VDS = -5V, ID = -5A
V VGS = 0V, IS = -1A
pF
pF
VDS = -15V, VGS = 0V,
f = 1.0MHz
pF
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
nC
nC VDS = -15V, ID = -6A
nC
ns
ns VDD = -15V, VGS = -10V,
ns Rg = 6Ω, ID = -1A
ns
DMP3050LVT
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DMP3050LVT
20
VGS = -10V
VGS = -5.0V
15
VGS = -4.5V
VGS = -4.0V
20
VDS = -5.0V
15
10
VGS = -3.5V
5
VGS = -3.0V
0
0
0.12
VGS = -2.5V
0.5 1.0 1.5 2.0 2.5
-VDS, DRAIN -SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
3.0
10
5
0
0
0.10
TA = 150C
TA = 85C
TA = 125C
TA = 25C
TA = -55C
1 23 4
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
5
0.10
0.08
0.08
0.06
0.06
0.04
0.04
0.02
0.02
0
0
0.10
4 8 12 16
-ID, DRAIN SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
20
0.08
VGS = -4.5V
0.06
0.04
0.02
TA = 150C
TA = 125C
TA = 85C
TA = 25C
TA = -55C
0
3
1.7
456 789
-VGS, GATE SOURCE VOLTAGE (V)
Fig. 4 Typical On-Resistance vs.
Drain Current and Gate Voltage
10
1.5
1.3
1.1
0.9
0.7
0
0 5 10 15 20
-ID, DRAIN SOURCE CURRENT (A)
Fig. 5 Typical On-Resistance vs.
Drain Current and Temperature
0.5
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 6 On-Resistance Variation with Temperature
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DMP3050LVT
0.10
0.08
0.06
0.04
0.02
VGS = -4.5V
ID = -5A
VGS = -10V
ID = -10A
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 7 On-Resistance Variation with Temperature
20
16
12
8
4
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE C)
Fig. 8 Gate Threshold Variation vs. Ambient Temperature
10,000
f = 1MHz
1,000
100
Ciss
Coss
Crss
0
0.4 0.6 0.8
1.0 1.2 1.4
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 9 Diode Forward Voltage vs. Current
10
8
6
4
2
0
0 2 4 6 8 10 12
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
10
0 5 10 15 20 25 30
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Junction Capacitance
100
RDS(ON) Limited
PW =100µs
10
1
0.1
0.01
PW =1ms
PW =10ms
PW =100ms
PW =1s
TJ(Max) = 150TC = 25
Single Pulse
DUT on 1*MRP Board
VGS= -10V
PW =10s
DC
0.1 1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
100
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DMP3050LVT
1
D=0.7
D=0.5
D=0.3
0.1
D=0.1
D=0.05
D=0.9
0.01
0.001
1E-05
D=0.02
D=0.01
D=0.005
D=Single Pulse
RθJA(t) = r(t) * RθJA
RθJA = 101/W
Duty Cycle, D = t1 / t2
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
10
100
1000
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