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Surface Mount Switching Diode
COMCHIP
www.comchip.com.tw
CDST 914
Voltage: 100 Volts
Current: 200mA
Features
Fast Switching Speed
Surface Mount Package Ideally Suite4d for
Automatic Insertion
For General Purpose Switching Applications
High Conductance
.119 (3.0)
.110 (2.8)
.020 (0.5)
3
SOT-23
Top View
Mechanical Data
Case: SOT -23, Plastic
Terminals : Solderable per NIL-STD -202,
Method 208
Approx. Weight: 0.008 gram
3
CATHODE
1
ANODE
12
.037(0.95) .037(0.95)
.020 (0.5) .020 (0.5)
.103 (2.6)
.086 (2.2)
Dimensions in inches (millimeters)
Maximum Ratings
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Rating
Thermal Characteristics
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Electrical Characterics (TA = 25°C unless otherwise noted)
Characteristic (OFF CHARACTERISTICS)
Reverse Breakdown Voltage ( I(BR) = 100 uAdc )
Reverse Voltage Leakage Current
V R = 20 Vdc
V R = 75 Vdc
Diode Capacitance (VR = 0, f = 1.0 MHz))
Forward Voltage
I F = 10 mAdc
Reverse Recovery Time (IF = IR = 10 mAdc)
1.FR–5 = 1.0 X 0.75X 0.062 in. 2.Alumina = 0.4X 0.3X 0.024 in. 99.5% alumina.
Symbol
VR
IF
IFM(surge)
Symbol
PD
RșJA
PD
RșJA
TJ, Tstg
Symbol
V(BR)
IR
CT
VF
Trr
Value
100
200
500
Max
225
1.8
556
300
2.4
417
–55 to +150
Min
100
-
-
-
Units
VDC
mAdc
mAdc
Units
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Max
-
25
50
4.0
1.0
4.0
Units
Vdc
nAdc
uAdc
pF
Vdc
nS
MDS0210002A
Page 1

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Surface Mount Switching Diode
COMCHIP
www.comchip.com.tw
RATING AND CHARACTERISTIC CURVES (CDST914)
+10 V
820
2.0 k
100 µH
0.1 µF
IF
50 Output
Pulse
Generator
DUT
0.1 µF
tr tp
10%
t
50 Input
Sampling
Oscilloscopes
VR
90%
Input Signal
IF
trr t
IR(REC) = 1.0 mA
IR
Output Pulse
(IF = IR = 10 mA; Measured
at IR(REC) = 1.0 mA)
100
10
1.0
0.1
0.2
Notes: 1. A 2.0 kvariable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
TA = 85°C
TA = –40°C
10
1.0
TA = 150°C
TA = 125°C
TA = 25°C
0.4 0.6 0.8 1.0
VF, Forward Voltage (V)
Figure 2. Forward Voltage
1.2
0.1
0.01
0.001
0
TA = 85°C
TA = 55°C
TA = 25°C
10 20 30
VR, Reverse Voltage (V)
40
Figure 3. Leakage Current
50
0.68
0.64
0.60
0.56
0.52
0
2.0 4.0 6.0
VR, Reverse Voltage (V)
Figure 4. Capacitance
8.0
MDS0210002A
Page 2