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INCHANGE Semiconductor
isc Triacs
isc Product Specification
TIC225M
FEATURES
·With TO-220 package
·Sensitive Gate Triacs
·Glass Passivated
·Max IGT of 5 mA (Quadrants 1)
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
MIN UNIT
VDRM
VRRM
IT(RMS)
ITSM
Tj
Tstg
Rth(j-c)
Rth(j-a)
Repetitive peak off-state voltage
600 V
Repetitive peak reverse voltage
600 V
RMS on-state current (full sine wave)TC=70
Non-repetitive peak on-state current
8
70
A
A
Operating junction temperature
110
Storage temperature
-45~150
Thermal resistance, junction to case
2.5 /W
Thermal resistance, junction to ambient
62.5 /W
ELECTRICAL CHARACTERISTICS (TC=25unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IDRM Repetitive peak off-state current VD=VDRM, TC=110
IGT Gate trigger current
Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs
IH Holding current
Vsupply = 12 V†, IG= 0 initial ITM= 100mA
VGT Gate trigger voltage all quadrant Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs
VTM On-state voltage
IT= 12A; IG= 50mA
MAX
2.0
5
20
10
30
20
2
2.1
UNIT
mA
mA
mA
V
V
isc websitewww.iscsemi.cn