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INCHANGE Semiconductor
isc Triacs
isc Product Specification
TIC246D
FEATURES
·With TO-220 package
·Sensitive Gate Triacs
·Glass Passivated
·Max IGT of 50 mA (Quadrants 1~3)
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
MIN UNIT
VDRM
VRRM
IT(RMS)
ITSM
Tj
Tstg
Rth(j-c)
Rth(j-a)
Repetitive peak off-state voltage
400 V
Repetitive peak reverse voltage
400 V
RMS on-state current (full sine wave)TC=70
Non-repetitive peak on-state current
16
125
A
A
Operating junction temperature
110
Storage temperature
-45~125
Thermal resistance, junction to case
1.9 /W
Thermal resistance, junction to ambient
62.5 /W
ELECTRICAL CHARACTERISTICS (TC=25unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
TYP. MAX UNIT
IDRM Repetitive peak off-state current VD=VDRM, TC=110
2.0 mA
12 50
IGT Gate trigger current
Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs
19 50
mA
16 50
34
IH Holding current
Vsupply = 12 V†,IG= 0 initial ITM=100mA
VGT Gate trigger voltageall quadrant Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs
VTM On-state voltage
IT= 22.5A; IG= 50mA
40 mA
2V
1.7 V
isc websitewww.iscsemi.cn