IXFH60N65X2.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 IXFH60N65X2 데이타시트 다운로드

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X2-Class HiPerFETTM
Power MOSFET
IXFH60N65X2
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
VDSS =
ID25 =
RDS(on)
650V
60A
52m
TO-247
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
650
650
V
V
30 V
40 V
60 A
120 A
15 A
2.5 J
50 V/ns
780 W
-55 ... +150
150
-55 ... +150
C
C
C
300 °C
260 °C
1.13 / 10
Nm/lb.in
6g
GDS
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
International Standard Package
Low RDS(ON) and QG
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 4mA
IGSS VGS = 30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
© 2016 IXYS CORPORATION, All Rights Reserved
Characteristic Values
Min. Typ.
Max.
650 V
3.5 5.0 V
100 nA
25 A
2.5 mA
52 m
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
DS100672C(03/16)

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Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs VDS = 10V, ID = 0.5 • ID25, Note 1
RGi Gate Input Resistance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
Co(er)
Co(tr)
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 3(External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25
RthJC
RthCS
Characteristic Values
Min. Typ. Max
23 38
S
0.8
6300
3540
1.7
pF
pF
pF
207
855
30
23
63
12
108
40
34
0.21
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.16 C/W
C/W
IXFH60N65X2
TO-247 (IXFH) Outline
DA
A
AA22
E B 0P O+ 0K M D B M
Q
R+
S D2
D
0P1
1
L1
L
2 3 ixys option
C
+
D1
4
E1
A1 b
c b2
b4
e
PINS: 1 - Gate
O+ J M C A M
2, 4 - Drain
3 - Source
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS VGS = 0V
ISM Repetitive, pulse Width Limited by TJM
VSD IF = IS, VGS = 0V, Note 1
trr
QRM
IRM
IF = 30A, -di/dt = 100A/μs
VR = 100V
Characteristic Values
Min. Typ. Max
60
A
240 A
1.4 V
180
1.4
16.0
ns
μC
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734B2 7,157,338B2
6,710,405B2 6,759,692 7,063,975B2
6,710,463
6,771,478B2 7,071,537

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IXFH60N65X2
60
50
40
30
20
10
0
0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGS = 10V
9V
8V
7V
6V
5V
0.5 1 1.5 2 2.5 3
VDS - Volts
3.5
Fig. 3. Output Characteristics @ TJ = 125ºC
60
VGS = 10V
8V
50
40 7V
30
6V
20
10
5V
0
01234567
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 30A Value vs.
Drain Current
4.5
4.0 VGS = 10V
3.5
T J = 125ºC
3.0
2.5
2.0
T J = 25ºC
1.5
1.0
0.5
0
20 40 60 80 100 120 140
ID - Amperes
8
160
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
160
VGS = 10V
140
9V
120
100
8V
80
60
40 7V
20
0
0
6V
5 10 15 20 25 30
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 30A Value vs.
Junction Temperature
3.4
3.0 VGS = 10V
2.6
2.2 I D = 60A
1.8
I D = 30A
1.4
1.0
0.6
0.2
-50
-25
0 25 50 75 100
TJ - Degrees Centigrade
125
150
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
1.3
1.2
1.1 BVDSS
1.0
0.9
0.8
VGS(th)
0.7
0.6
0.5
-60 -40 -20
0 20 40 60 80 100 120 140 160
TJ - Degrees Centigrade
© 2016 IXYS CORPORATION, All Rights Reserved

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IXFH60N65X2
Fig. 7. Maxing Drain Current vs. Case Temperature
70
60
50
40
30
20
10
0
-50
-25
0 25 50 75 100 125 150
TC - Degrees Centigrade
70
60
50
40
30
20
10
0
0
Fig. 9. Transconductance
TJ = - 40ºC
25ºC
125ºC
10 20 30 40 50 60 70 80 90
I D - Amperes
Fig. 8. Input Admittance
90
80
70
60
TJ = 125ºC
50 25ºC
- 40ºC
40
30
20
10
0
3.5 4 4.5 5 5.5 6 6.5 7 7.5 8
VGS - Volts
200
180
160
140
120
100
80
60
40
20
0
0.3
Fig. 10. Forward Voltage Drop of Intrinsic Diode
TJ = 125ºC
TJ = 25ºC
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
V SD - Volts
1.3
Fig. 11. Gate Charge
10
100,000
9 VDS = 325V
8 I D = 30A
I G = 10mA
7
10,000
6 1,000
5
4 100
3
2 10
1
0
0 10 20 30 40 50 60 70 80 90 100 110
QG - NanoCoulombs
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1
1
f = 1 MHz
Fig. 12. Capacitance
Ciss
Coss
Crss
10 100
VDS - Volts
1000

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IXFH60N65X2
Fig. 13. Output Capacitance Stored Energy
45
Fig. 14. Forward-Bias Safe Operating Area
1000
40 RDS(on) Limit
35
100
25µs
30
25 100µs
10
20
15
10
5
0
0
1
1
TJ = 150ºC
TC = 25ºC
Single Pulse
Fig. 15. Maximum Transient0.T1 hermal Impedance
100 200 300 400 500 600
10
VDS - Volts
100
VDS - Volts
1ms
1,000
Fig. 15. Maximum Transient Thermal Impedance
aaaaa
0.3
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2016 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_60N65X2(X7-S602) 11-19-15