IXFN100N65X2.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 IXFN100N65X2 데이타시트 다운로드

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X2-Class HiPerFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN100N65X2
D
G
S
S
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
dv/dt
TJ
TJM
Tstg
VISOL
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150°C
50/60 Hz, RMS
t = 1 minute
IISOL 1mA
t = 1 second
Mounting Torque
Terminal Connection Torque
Maximum Ratings
650
650
V
V
30 V
40 V
78 A
200 A
15 A
3.5 J
595 W
50 V/ns
-55 ... +150
150
-55 ... +150
C
C
C
2500
3000
V~
V~
1.5/13
1.3/11.5
Nm/lb.in
Nm/lb.in
30 g
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 4mA
IGSS VGS = 30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 50A, Note 1
Characteristic Values
Min. Typ. Max.
650 V
3.5 5.0 V
100 nA
50 A
5 mA
30 m
VDSS =
ID25 =
RDS(on)
650V
78A
30m
miniBLOC, SOT-227
E153432
S
G
G = Gate
S = Source
S
D
D = Drain
Features
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation
Isolation Voltage 2500V~
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
Low RDS(on)
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
© 2016 IXYS CORPORATION, All Rights Reserved
DS100707A(03/16)

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Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs VDS = 10V, ID = 50A, Note 1
RGi Gate Input Resistance
Ciss
Coss
Crss
Co(er)
Co(tr)
VGS = 0V, VDS = 25V, f = 1MHz
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCS
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 50A
RG = 2(External)
VGS = 10V, VDS = 0.5 VDSS, ID = 50A
Characteristic Values
Min. Typ. Max
40 68
S
0.7
10.8
6000
2.6
nF
pF
pF
365
1500
pF
pF
37 ns
26 ns
90 ns
13 ns
183 nC
60 nC
62 nC
0.21C/W
0.05C/W
IXFN100N65X2
SOT-227B (IXFN) Outline
(M4 screws (4x) supplied)
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS VGS = 0V
ISM Repetitive, Pulse Width Limited by TJM
VSD IF = IS, VGS = 0V, Note 1
trr
QRM
IRM
IF = 50A, -di/dt = 100A/s
VR = 100V, VGS = 0V
Characteristic Values
Min. Typ. Max.
100 A
400 A
1.4 V
200 ns
1.7 μC
17.2 A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

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IXFN100N65X2
100
90
80
70
60
50
40
30
20
10
0
0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGS = 10V
8V
7V
6V
5V
0.5 1 1.5 2 2.5 3
VDS - Volts
3.5
100
90
80
70
60
50
40
30
20
10
0
0
Fig. 3. Output Characteristics @ TJ = 125ºC
VGS = 10V
8V
7V
6V
5V
4V
1234567
VDS - Volts
8
Fig. 5. RDS(on) Normalized to ID = 50A Value vs.
Drain Current
4.5
4.0 VGS = 10V
3.5 TJ = 125ºC
3.0
2.5
2.0
TJ = 25ºC
1.5
1.0
0.5
0 20 40 60 80 100 120 140 160 180 200 220 240
ID - Amperes
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
240
VGS = 10V
9V
200
8V
160
120 7V
80
40
0
0
6V
5V
5 10 15
VDS - Volts
20
Fig. 4. RDS(on) Normalized to ID = 50A Value vs.
Junction Temperature
3.4
3.0 VGS = 10V
2.6
2.2 I D = 100A
1.8
I D = 50A
1.4
1.0
0.6
0.2
-50
-25
0 25 50 75 100
TJ - Degrees Centigrade
125
25
150
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
1.3
1.2
1.1 BVDSS
1.0
0.9
0.8
VGS(th)
0.7
0.6
0.5
-60 -40 -20
0 20 40 60 80 100 120 140 160
TJ - Degrees Centigrade
© 2016 IXYS CORPORATION, All Rights Reserved

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IXFN100N65X2
Fig. 7. Maximum Drain Current vs. Case Temperature
90
80
70
60
50
40
30
20
10
0
-50
-25
0 25 50 75 100 125 150
TC - Degrees Centigrade
Fig. 8. Input Admittance
140
120
100
TJ = 125ºC
25ºC
80 - 40ºC
60
40
20
0
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
VGS - Volts
140
120
100
80
60
40
20
0
0
Fig. 9. Transconductance
TJ = - 40ºC
25ºC
125ºC
20 40 60 80 100 120 140 160
ID - Amperes
200
180
160
140
120
100
80
60
40
20
0
0.3
Fig. 10. Forward Voltage Drop of Intrinsic Diode
TJ = 125ºC
TJ = 25ºC
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VSD - Volts
1.3
10
VDS = 325V
8 I D = 50A
I G = 10mA
6
Fig. 11. Gate Charge
100,000
10,000
1,000
Fig. 12. Capacitance
Ciss
4 100 Coss
2
0
0 20 40 60 80 100 120 140 160 180 200
QG - NanoCoulombs
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10
f = 1 MHz
1
1
10 100
VDS - Volts
Crss
1000

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IXFN100N65X2
Fig. 13. Output Capacitance Stored Energy
90
Fig. 14. Forward-Bias Safe Operating Area
1000
80
RDS(on) Limit
70
100
25µs
60
100µs
50
10
40
30
20
1
TJ = 150ºC
TC = 25ºC
10 Single Pulse
0 0.1
0 100 200 300 400 Fig5. 0105. Max6im00um Transient Th1ermal Impedance 10
100
VDS - Volts
1
VDS - Volts
Fig. 15. Maximum Transient Thermal Impedance
0.4 aaaaa
1ms
10ms
DC
1,000
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2016 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_100N65X2(X8-S602) 2-12-16_A