IXFN66N85X.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 IXFN66N85X 데이타시트 다운로드

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Advance Technical Information
X-Class HiPerFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN66N85X
D
G
S
S
VDSS =
ID25 =
RDS(on)
850V
65A
65m
miniBLOC, SOT-227
E153432
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
dv/dt
TJ
TJM
Tstg
VISOL
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150°C
50/60 Hz, RMS
t = 1 minute
IISOL 1mA
t = 1 second
Mounting Torque
Terminal Connection Torque
Maximum Ratings
850
850
V
V
30 V
40 V
65 A
140 A
33 A
2.5 J
830 W
50 V/ns
-55 ... +150
150
-55 ... +150
C
C
C
2500
3000
V~
V~
1.5/13
1.3/11.5
Nm/lb.in
Nm/lb.in
30 g
S
G
G = Gate
S = Source
S
D
D = Drain
Features
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation
Isolation Voltage 2500 V~
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
Low RDS(on)
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS VGS = 30V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 33A, Note 1
Characteristic Values
Min. Typ. Max.
850 V
3.5 5.5 V
100 nA
50 A
3 mA
65 m
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
© 2016 IXYS CORPORATION, All Rights Reserved
DS100715(4/16)

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Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
RGi
Ciss
Coss
Crss
Co(er)
Co(tr)
VDS = 10V, ID = 33A, Note 1
Gate Input Resistance
VGS = 0V, VDS = 25V, f = 1MHz
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCS
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 33A
RG = 1(External)
VGS = 10V, VDS = 0.5 VDSS, ID = 33A
Characteristic Values
Min. Typ. Max
25 42
S
0.75
8900
8900
142
pF
pF
pF
294
1270
pF
pF
40 ns
48 ns
105 ns
20 ns
230 nC
53 nC
113 nC
0.15C/W
0.05C/W
IXFN66N85X
SOT-227B (IXFN) Outline
(M4 screws (4x) supplied)
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS VGS = 0V
ISM Repetitive, Pulse Width Limited by TJM
VSD IF = IS , VGS = 0V, Note 1
trr
QRM
IRM
IF = 33A, -di/dt = 100A/s
VR = 100V, VGS = 0V
Characteristic Values
Min. Typ. Max.
66 A
264 A
1.4 V
250 ns
2.7 μC
21.7 A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

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IXFN66N85X
70
60
50
40
30
20
10
0
0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGS = 10V
9V
8V
7V
6V
0.5 1 1.5 2 2.5 3 3.5 4
VDS - Volts
4.5
Fig. 3. Output Characteristics @ TJ = 125ºC
70
VGS = 10V
60
8V
50
40 7V
30
6V
20
10 5V
0
01234 56789
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 33A Value vs.
Drain Current
3.5
VGS = 10V
3.0
TJ = 125ºC
10
2.5
2.0
1.5 TJ = 25ºC
1.0
0.5
0 20 40 60 80 100 120 140 160 180
ID - Amperes
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
180
VGS = 10V
160
140 9V
120
100 8V
80
60
7V
40
20
0
0
6V
5 10 15 20 25 30
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 33A Value vs.
Junction Temperature
3.4
3.0 VGS = 10V
2.6
2.2
1.8
1.4
1.0
0.6
0.2
-50
-25
I D = 66A
I D = 33A
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
1.3
1.2
1.1 BVDSS
1.0
0.9
0.8
VGS(th)
0.7
0.6
0.5
-60 -40 -20
0 20 40 60 80 100 120 140 160
TJ - Degrees Centigrade
© 2016 IXYS CORPORATION, All Rights Reserved

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IXFN66N85X
Fig. 7. Maximum Drain Current vs. Case Temperature
70
60
50
40
30
20
10
0
-50
-25
0 25 50 75 100 125 150
TC - Degrees Centigrade
Fig. 8. Input Admittance
100
90
80
70
TJ = 125ºC
60 25ºC
- 40ºC
50
40
30
20
10
0
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5
VGS - Volts
90
80
70
60
50
40
30
20
10
0
0
Fig. 9. Transconductance
TJ = - 40ºC
25ºC
125ºC
10 20 30 40 50 60 70 80 90 100 110
ID - Amperes
200
180
160
140
120
100
80
60
40
20
0
0.3
Fig. 10. Forward Voltage Drop of Intrinsic Diode
TJ = 125ºC
TJ = 25ºC
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
VSD - Volts
1.4
10
VDS = 425V
I D = 33A
8
I G = 10mA
Fig. 11. Gate Charge
100,000
10,000
Fig. 12. Capacitance
Ciss
6 1,000
4 100 Coss
2
0
0 20 40 60 80 100 120 140 160 180 200 220 240
QG - NanoCoulombs
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10
f = 1 MHz
1
1
Crss
10 100
VDS - Volts
1000

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IXFN66N85X
Fig. 13. Output Capacitance Stored Energy
120
100
80
60
Fig. 14. Forward-Bias Safe Operating Area
1000
RDS(on) Limit
100
10
25µs
100µs
40
1
TJ = 150ºC
20 TC = 25ºC
Single Pulse
0 0.1
0 100 200 300 400 500 600 Fig7.0105. M8a0x0imum900Transient T10hermal Impedance
1 VDS - Volts
Fig. 15. Maximum Transient Thermal Impedance
aaaaa
0.3
100
VDS - Volts
1ms
10ms
1,000
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2016 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_66N85X (U8-D901) 4-08-16