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Preliminary Technical Information
XPTTM 650V IGBT
GenX3TM w/Diode
IXYA15N65C3D1
IXYP15N65C3D1
Extreme Light Punch Through
IGBT for 20-60kHz Switching
VCES = 650V
IC110 = 15A
VCE(sat)  2.5V
tfi(typ) = 28ns
TO-263 AA (IXYA)
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IIFC1M10
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
MFCd
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
650 V
650 V
±20 V
±30 V
TC = 25°C
TC = 110°C
TTCC
= 110°C
= 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 20
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
TC = 25°C
38
15
23
80
5
100
ICM = 30
@VCE VCES
8
200
-55 ... +175
175
-55 ... +175
A
A
A
A
A
mJ
A
μs
W
°C
°C
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300 °C
260 °C
Mounting Torque (TO-220)
Mounting Force (TO-263)
1.13/10
10..65 / 2.2..14.6
Nm/lb.in
N/lb
TO-263
TO-220
2.5 g
3.0 g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
15A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
650 V
3.5 6.0 V
10 A
400 A
100 nA
1.96
2.45
2.50 V
V
© 2015 IXYS CORPORATION, All Rights Reserved
G
E
C (Tab)
TO-220AB (IXYP)
GC E
C (Tab)
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
Optimized for 20-60kHz Switching
Square RBSOA
Avalanche Rated
Anti-Parallel Fast Diode
Short Circuit Capability
International Standard Packages
Advantages
High Power Density
Extremely Rugged
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
High Frequency Power Inverters
DS100575B(02/15)

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Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs IC = 15A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 15A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 15A, VGE = 15V
VCE = 400V, RG = 20
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 150°C
IC = 15A, VGE = 15V
VCE = 400V, RG = 20
Note 2
RthJC
RthCS
TO-220
Characteristic Values
Min.
Typ. Max.
5.0 8.5
S
583 pF
52 pF
13 pF
19 nC
4 nC
10 nC
15
20
0.27
68
28
0.23
0.40
ns
ns
mJ
ns
ns
mJ
15 ns
21 ns
0.53 mJ
80 ns
42 ns
0.24 mJ
0.75 °C/W
0.50 °C/W
IXYA15N65C3D1
IXYP15N65C3D1
TO-263 Outline
1. Gate
2. Collector
3. Emitter
4. Collector
Bottom Side
Dim.
A
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
Millimeter
Min. Max.
4.06
0.51
1.14
4.83
0.99
1.40
0.40
1.14
0.74
1.40
8.64
8.00
9.65
8.89
9.65 10.41
6.22
2.54
14.61
2.29
1.02
1.27
0
8.13
BSC
15.88
2.79
1.40
1.78
0.13
Inches
Min. Max.
.160
.020
.045
.190
.039
.055
.016 .029
.045 .055
.340 .380
.280 .320
.380 .405
.270
.100
.575
.090
.040
.050
0
.320
BSC
.625
.110
.055
.070
.005
TO-220 Outline
Reverse Diode (FRED)
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
VF IF = 10A, VGE = 0V, Note 1
TJ = 125C
Characteristic Values
Min. Typ. Max.
3.0
1.7
V
V
IRM IF = 12A, VGE = 0V,
trr -diF/dt = 100A/μs, VR = 100V, TJ = 125°C
2.5
110
trr
IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V
30
A
ns
ns
RthJC
1.85 °C/W
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
Pins: 1 - Gate
2,4 - Collector
3 - Emitter
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

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30
25
20
15
10
5
0
0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGE = 15V
14V
13V
12V
11V
10V
9V
8V
7V
0.5 1 1.5 2 2.5 3 3.5
VCE - Volts
Fig. 3. Output Characteristics @ TJ = 150ºC
30
VGE = 15V
14V
25 13V
12V
11V
20
10V
15
9V
10
8V
5
7V
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
8
TJ = 25ºC
7
6
5
I C = 7.5A
4
15A 30A
3
2
1
8 9 10 11 12 13 14 15
VGE - Volts
IXYA15N65C3D1
IXYP15N65C3D1
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
70
60 VGE = 15V
50
40
30
20
10
0
0
14V
13V
12V
11V
10V
9V
8V
5 10 15 20 25 30
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
2.0
VGE = 15V
1.8
1.6
I C = 30A
1.4
1.2 I C = 15A
1.0
I C = 7.5A
0.8
0.6
-50 -25 0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
Fig. 6. Input Admittance
40
35
30
25
20
15
TJ = 150ºC
25ºC
- 40ºC
10
5
0
5 6 7 8 9 10 11 12 13
VGE - Volts
© 2015 IXYS CORPORATION, All Rights Reserved

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IXYA15N65C3D1
IXYP15N65C3D1
11
10 VCE = 10V
9
8
7
Fig. 7. Transconductance
TJ = - 40ºC
25ºC
150ºC
6
5
4
3
2
1
0
0 5 10 15 20 25 30 35
IC - Amperes
16
14 VCE = 325V
I C = 15A
12 I G = 10mA
10
8
6
4
2
0
024
Fig. 8. Gate Charge
6 8 10 12 14 16 18 20
QG - NanoCoulombs
1,000
Fig. 9. Capacitance
Cies
100
Coes
f = 1 MHz
Cres
10
0
5 10 15 20 25 30 35 40
VCE - Volts
Fig. 10. Reverse-Bias Safe Operating Area
35
30
25
20
15
10
5
0
100
TJ = 150ºC
RG = 20
dv / dt < 10V / ns
200 300
400
VCE - Volts
500
600
Fig. 11. Maximum Transient Thermal Impedance
1
700
0.1
0.01
0.00001
0.0001
0.001
Pulse Width - Second
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.01
0.1
1

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Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
1.0
Eoff Eon - - - -
0.8 TJ = 150ºC , VGE = 15V
VCE = 400V
5
4
0.6
I C = 30A
3
0.4 2
0.2
I C = 15A
1
0.0
20 30 40 50 60 70 80 90
RG - Ohms
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
1.0
Eoff Eon - - - -
0.8 RG = 20, VGE = 15V
VCE = 400V
0
100
2.5
2.0
0.6
I C = 30A
1.5
0.4 1.0
0.2 0.5
I C = 15A
0.0
25
50 75 100
TJ - Degrees Centigrade
125
0.0
150
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
55 120
50
TJ = 150ºC
45
t f i td(off) - - - -
RG = 20, VGE = 15V
VCE = 400V
110
100
40 90
35
30 TJ = 25ºC
80
70
25 60
20 50
15
8
40
10 12 14 16 18 20 22 24 26 28 30
IC - Amperes
© 2015 IXYS CORPORATION, All Rights Reserved
IXYA15N65C3D1
IXYP15N65C3D1
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
0.9 1.8
0.8 Eoff
Eon - - - -
RG = 20, VGE = 15V
0.7 VCE = 400V
1.6
1.4
0.6 1.2
0.5 TJ = 150ºC
0.4
1.0
0.8
0.3 0.6
0.2 0.4
TJ = 25ºC
0.1 0.2
0.0
8
0.0
10 12 14 16 18 20 22 24 26 28 30
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
60 220
55 t f i
td(off) - - - -
TJ = 150ºC, VGE = 15V
50 VCE = 400V
45
I C = 15A
200
180
160
40 140
35 120
I C = 30A
30 100
25 80
20 60
15 40
20 30 40 50 60 70 80 90 100
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
50 90
45 t f i
td(off) - - - -
RG = 20, VGE = 15V
40 VCE = 400V
85
80
35
I C = 15A
30
75
70
25
I C = 30A
20
65
60
15 55
10
25
50 75 100 125
TJ - Degrees Centigrade
50
150