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Preliminary Technical Information
XPTTM 650V IGBT
GenX3TM w/Diode
IXYA15N65C3D1
IXYP15N65C3D1
Extreme Light Punch Through
IGBT for 20-60kHz Switching
VCES = 650V
IC110 = 15A
VCE(sat)  2.5V
tfi(typ) = 28ns
TO-263 AA (IXYA)
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IIFC1M10
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
MFCd
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
650 V
650 V
±20 V
±30 V
TC = 25°C
TC = 110°C
TTCC
= 110°C
= 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 20
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
TC = 25°C
38
15
23
80
5
100
ICM = 30
@VCE VCES
8
200
-55 ... +175
175
-55 ... +175
A
A
A
A
A
mJ
A
μs
W
°C
°C
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300 °C
260 °C
Mounting Torque (TO-220)
Mounting Force (TO-263)
1.13/10
10..65 / 2.2..14.6
Nm/lb.in
N/lb
TO-263
TO-220
2.5 g
3.0 g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
15A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
650 V
3.5 6.0 V
10 A
400 A
100 nA
1.96
2.45
2.50 V
V
© 2015 IXYS CORPORATION, All Rights Reserved
G
E
C (Tab)
TO-220AB (IXYP)
GC E
C (Tab)
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
Optimized for 20-60kHz Switching
Square RBSOA
Avalanche Rated
Anti-Parallel Fast Diode
Short Circuit Capability
International Standard Packages
Advantages
High Power Density
Extremely Rugged
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
High Frequency Power Inverters
DS100575B(02/15)

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Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs IC = 15A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 15A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 15A, VGE = 15V
VCE = 400V, RG = 20
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 150°C
IC = 15A, VGE = 15V
VCE = 400V, RG = 20
Note 2
RthJC
RthCS
TO-220
Characteristic Values
Min.
Typ. Max.
5.0 8.5
S
583 pF
52 pF
13 pF
19 nC
4 nC
10 nC
15
20
0.27
68
28
0.23
0.40
ns
ns
mJ
ns
ns
mJ
15 ns
21 ns
0.53 mJ
80 ns
42 ns
0.24 mJ
0.75 °C/W
0.50 °C/W
IXYA15N65C3D1
IXYP15N65C3D1
TO-263 Outline
1. Gate
2. Collector
3. Emitter
4. Collector
Bottom Side
Dim.
A
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
Millimeter
Min. Max.
4.06
0.51
1.14
4.83
0.99
1.40
0.40
1.14
0.74
1.40
8.64
8.00
9.65
8.89
9.65 10.41
6.22
2.54
14.61
2.29
1.02
1.27
0
8.13
BSC
15.88
2.79
1.40
1.78
0.13
Inches
Min. Max.
.160
.020
.045
.190
.039
.055
.016 .029
.045 .055
.340 .380
.280 .320
.380 .405
.270
.100
.575
.090
.040
.050
0
.320
BSC
.625
.110
.055
.070
.005
TO-220 Outline
Reverse Diode (FRED)
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
VF IF = 10A, VGE = 0V, Note 1
TJ = 125C
Characteristic Values
Min. Typ. Max.
3.0
1.7
V
V
IRM IF = 12A, VGE = 0V,
trr -diF/dt = 100A/μs, VR = 100V, TJ = 125°C
2.5
110
trr
IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V
30
A
ns
ns
RthJC
1.85 °C/W
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
Pins: 1 - Gate
2,4 - Collector
3 - Emitter
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

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30
25
20
15
10
5
0
0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGE = 15V
14V
13V
12V
11V
10V
9V
8V
7V
0.5 1 1.5 2 2.5 3 3.5
VCE - Volts
Fig. 3. Output Characteristics @ TJ = 150ºC
30
VGE = 15V
14V
25 13V
12V
11V
20
10V
15
9V
10
8V
5
7V
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
8
TJ = 25ºC
7
6
5
I C = 7.5A
4
15A 30A
3
2
1
8 9 10 11 12 13 14 15
VGE - Volts
IXYA15N65C3D1
IXYP15N65C3D1
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
70
60 VGE = 15V
50
40
30
20
10
0
0
14V
13V
12V
11V
10V
9V
8V
5 10 15 20 25 30
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
2.0
VGE = 15V
1.8
1.6
I C = 30A
1.4
1.2 I C = 15A
1.0
I C = 7.5A
0.8
0.6
-50 -25 0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
Fig. 6. Input Admittance
40
35
30
25
20
15
TJ = 150ºC
25ºC
- 40ºC
10
5
0
5 6 7 8 9 10 11 12 13
VGE - Volts
© 2015 IXYS CORPORATION, All Rights Reserved