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Preliminary Technical Information
XPTTM 650V IGBT
GenX3TM
Extreme Light Punch Through
IGBT for 20-60 kHz Switching
IXYA20N65C3
IXYH20N65C3
VCES = 650V
IC110 = 20A
VCE(sat)  2.50V
tfi(typ) = 28ns
TO-263 AA (IXYA)
Symbol
VCES
VCGR
VGES
VGEM
IC25
IICCM110
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TC = 25°C
TTCC
= 110°C
= 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 20
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
TO-263
TO-247
Maximum Ratings
650 V
650 V
±20 V
±30 V
50 A
20 A
105 A
10 A
200 mJ
ICM = 40
VCE VCES
10
A
μs
230
-55 ... +175
175
-55 ... +175
300
260
1.13/10
2.5
6.0
W
°C
°C
°C
°C
°C
Nm/lb.in
g
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
20A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
650 V
3.5 6.0 V
10 A
150 A
100 nA
2.27
2.44
2.50 V
V
G
E
C (Tab)
TO-247 AD
G
CE
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
Optimized for 20-60kHz Switching
Square RBSOA
Avalanche Rated
Short Circuit Capability
International Standard Packages
Advantages
High Power Density
Extremely Rugged
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
High Frequency Power Inverters
© 2015 IXYS CORPORATION, All Rights Reserved
DS100543C(01/15)

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Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs IC = 20A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 20A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 20A, VGE = 15V
VCE = 400V, RG = 20
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 150°C
IC = 20A, VGE = 15V
VCE = 400V, RG = 20
Note 2
RthJC
RthCS
TO-247
Characteristic Values
Min.
Typ. Max.
7 12
S
822 pF
52 pF
19 pF
30 nC
6 nC
15 nC
19
34
0.43
80
28
0.35
0.65
ns
ns
mJ
ns
ns
mJ
18 ns
33 ns
0.70 mJ
96 ns
36 ns
0.40 mJ
0.65 °C/W
0.21 °C/W
IXYA20N65C3
IXYH20N65C3
TO-263 Outline
Dim.
A
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
Millimeter
Min. Max.
4.06
0.51
1.14
4.83
0.99
1.40
0.40
1.14
0.74
1.40
8.64
8.00
9.65
8.89
9.65 10.41
6.22
2.54
14.61
2.29
1.02
1.27
0
8.13
BSC
15.88
2.79
1.40
1.78
0.13
1. Gate
2. Collector
3. Emitter
4. Collector
Inches
Min. Max.
.160
.020
.045
.190
.039
.055
.016 .029
.045 .055
.340 .380
.280 .320
.380 .405
.270
.100
.575
.090
.040
.050
0
.320
BSC
.625
.110
.055
.070
.005
TO-247 (IXYH) Outline
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
1 - Gate
2,4 - Collector
3 - Emitter
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

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40
35
30
25
20
15
10
5
0
0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGE = 15V
13V
12V
11V
10V
9V
8V
7V
0.5 1 1.5 2 2.5 3 3.5 4
VCE - Volts
4.5
Fig. 3. Output Characteristics @ TJ = 150ºC
40
VGE = 15V
35
14V
13V
12V
30 11V
25
10V
20
15 9V
10
8V
5
7V
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
8
TJ = 25ºC
7
6
5
I C = 40A
4
3
20A
2
10A
1
8 9 10 11 12 13 14 15
VGE - Volts
IXYA20N65C3
IXYH20N65C3
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
100
VGE = 15V
80
14V
13V
60
12V
40 11V
20
0
0
2.0
1.8
5 10 15 20 25
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
VGE = 15V
10V
9V
8V
30
1.6
I C = 40A
1.4
1.2
I C = 20A
1.0
0.8
0.6
-50
I C = 10A
-25 0
25 50 75 100 125 150 175
TJ - Degrees Centigrade
Fig. 6. Input Admittance
60
50
40
30
20
TJ = 150ºC
25ºC
- 40ºC
10
0
4 5 6 7 8 9 10 11 12 13
VGE - Volts
© 2015 IXYS CORPORATION, All Rights Reserved

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16
14 VCE = 10V
12
10
Fig. 7. Transconductance
TJ = - 40ºC
25ºC
150ºC
8
6
4
2
0
0 5 10 15 20 25 30 35 40 45 50
IC - Amperes
10,000
f = 1 MHz
1,000
Fig. 9. Capacitance
Cies
IXYA20N65C3
IXYH20N65C3
16
14 VCE = 325V
IC = 20A
12 IG = 10mA
Fig. 8. Gate Charge
10
8
6
4
2
0
0 4 8 12 16 20 24 28 32
QG - NanoCoulombs
Fig. 10. Reverse-Bias Safe Operating Area
40
30
Coes
100
10
0
1000
Cres
5 10 15 20 25 30 35
VCE - Volts
Fig. 11. Forward-Bias Safe Operating Area
40
VCE(sat) Limit
100
20
10 TJ = 150ºC
RG = 20
dv / dt < 10V / ns
0
100 200 300 400 500 600 700
VCE - Volts
Fig. 12. Maximum Transient Thermal Impedance (IGBT)
1
D = 0.5
D = 0.2
10
25µs
0.1
D = 0.1
100µs
D = 0.05
1
0.1
1
TJ = 175ºC
TC = 25ºC
Single Pulse
10
VDS - Volts
100
1ms
10ms
DC
1000
D = 0.02
D = 0.01
Single Pulse
0.01
1.E-06
1.E-05
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
D = tp / T
tp
T
1.E-04
1.E-03
1.E-02
Pulse Width - Second
1.E-01
1.E+00

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Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
1.6
1.4 Eoff
Eon - - - -
TJ = 150ºC , VGE = 15V
1.2 VCE = 400V
7
6
5
1.0 I C = 40A
4
0.8 3
0.6 2
I C = 20A
0.4 1
0.2
20 30 40 50 60 70 80 90
RG - Ohms
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
1.6
1.4 Eoff
Eon - - - -
RG = 20, VGE = 15V
1.2 VCE = 400V
0
100
4.0
3.5
3.0
1.0
0.8 I C = 40A
2.5
2.0
0.6 1.5
0.4
IC = 20A
0.2
1.0
0.5
0.0
25
50 75 100
TJ - Degrees Centigrade
125
0.0
150
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
55 130
50
tfi
td(off) - - - -
120
RG = 20, VGE = 15V
45
VCE = 400V
110
40 100
TJ = 150ºC
35 90
30 80
25
TJ = 25ºC
70
20 60
10 15 20 25 30 35 40
IC - Amperes
© 2015 IXYS CORPORATION, All Rights Reserved
IXYA20N65C3
IXYH20N65C3
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
1.2
Eoff Eon - - - -
1.0 RG = 20, VGE = 15V
VCE = 400V
0.8
TJ = 150ºC
2.4
2.0
1.6
0.6 1.2
TJ = 25ºC
0.4 0.8
0.2 0.4
0.0 0.0
10 15 20 25 30 35 40
IC - Amperes
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
55 270
50 t f i
td(off) - - - -
TJ = 150ºC, VGE = 15V
45 VCE = 400V
240
210
40 I C = 20A
180
35 150
30
I C = 40A
25
120
90
20 60
20 30 40 50 60 70 80 90 100
RG - Ohms
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
44 112
t f i td(off) - - - -
40 RG = 20, VGE = 15V
VCE = 400V
36
I C = 20A
104
96
32 88
I C = 40A
28 80
24 72
20
25
50 75 100 125
TJ - Degrees Centigrade
64
150