IXYH20N65C3.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 IXYH20N65C3 데이타시트 다운로드

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Preliminary Technical Information
XPTTM 650V IGBT
GenX3TM
Extreme Light Punch Through
IGBT for 20-60 kHz Switching
IXYA20N65C3
IXYH20N65C3
VCES = 650V
IC110 = 20A
VCE(sat)  2.50V
tfi(typ) = 28ns
TO-263 AA (IXYA)
Symbol
VCES
VCGR
VGES
VGEM
IC25
IICCM110
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TC = 25°C
TTCC
= 110°C
= 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 20
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
TO-263
TO-247
Maximum Ratings
650 V
650 V
±20 V
±30 V
50 A
20 A
105 A
10 A
200 mJ
ICM = 40
VCE VCES
10
A
μs
230
-55 ... +175
175
-55 ... +175
300
260
1.13/10
2.5
6.0
W
°C
°C
°C
°C
°C
Nm/lb.in
g
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
20A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
650 V
3.5 6.0 V
10 A
150 A
100 nA
2.27
2.44
2.50 V
V
G
E
C (Tab)
TO-247 AD
G
CE
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
Optimized for 20-60kHz Switching
Square RBSOA
Avalanche Rated
Short Circuit Capability
International Standard Packages
Advantages
High Power Density
Extremely Rugged
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
High Frequency Power Inverters
© 2015 IXYS CORPORATION, All Rights Reserved
DS100543C(01/15)

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Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs IC = 20A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 20A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 20A, VGE = 15V
VCE = 400V, RG = 20
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 150°C
IC = 20A, VGE = 15V
VCE = 400V, RG = 20
Note 2
RthJC
RthCS
TO-247
Characteristic Values
Min.
Typ. Max.
7 12
S
822 pF
52 pF
19 pF
30 nC
6 nC
15 nC
19
34
0.43
80
28
0.35
0.65
ns
ns
mJ
ns
ns
mJ
18 ns
33 ns
0.70 mJ
96 ns
36 ns
0.40 mJ
0.65 °C/W
0.21 °C/W
IXYA20N65C3
IXYH20N65C3
TO-263 Outline
Dim.
A
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
Millimeter
Min. Max.
4.06
0.51
1.14
4.83
0.99
1.40
0.40
1.14
0.74
1.40
8.64
8.00
9.65
8.89
9.65 10.41
6.22
2.54
14.61
2.29
1.02
1.27
0
8.13
BSC
15.88
2.79
1.40
1.78
0.13
1. Gate
2. Collector
3. Emitter
4. Collector
Inches
Min. Max.
.160
.020
.045
.190
.039
.055
.016 .029
.045 .055
.340 .380
.280 .320
.380 .405
.270
.100
.575
.090
.040
.050
0
.320
BSC
.625
.110
.055
.070
.005
TO-247 (IXYH) Outline
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
1 - Gate
2,4 - Collector
3 - Emitter
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

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40
35
30
25
20
15
10
5
0
0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGE = 15V
13V
12V
11V
10V
9V
8V
7V
0.5 1 1.5 2 2.5 3 3.5 4
VCE - Volts
4.5
Fig. 3. Output Characteristics @ TJ = 150ºC
40
VGE = 15V
35
14V
13V
12V
30 11V
25
10V
20
15 9V
10
8V
5
7V
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
8
TJ = 25ºC
7
6
5
I C = 40A
4
3
20A
2
10A
1
8 9 10 11 12 13 14 15
VGE - Volts
IXYA20N65C3
IXYH20N65C3
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
100
VGE = 15V
80
14V
13V
60
12V
40 11V
20
0
0
2.0
1.8
5 10 15 20 25
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
VGE = 15V
10V
9V
8V
30
1.6
I C = 40A
1.4
1.2
I C = 20A
1.0
0.8
0.6
-50
I C = 10A
-25 0
25 50 75 100 125 150 175
TJ - Degrees Centigrade
Fig. 6. Input Admittance
60
50
40
30
20
TJ = 150ºC
25ºC
- 40ºC
10
0
4 5 6 7 8 9 10 11 12 13
VGE - Volts
© 2015 IXYS CORPORATION, All Rights Reserved