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Advance Technical Information
XPTTM 650V IGBT
GenX3TM w/ Diode
Extreme Light Punch Through
IGBT for 5-30kHz Switching
IXYH30N65B3D1
IXYQ30N65B3D1
VCES = 650V
IC110 = 30A
VCE(sat)  2.1V
tfi(typ) = 33ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TC = 25°C
TTCC
= 110°C
= 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE= 15V, TVJ = 150°C, RG = 10
Clamped Inductive Load
VGE= 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
TO-247
TO-3P
Maximum Ratings
650 V
650 V
±20 V
±30 V
70 A
30 A
50 A
160 A
10 A
300 mJ
ICM = 60
@VCE VCES
5
A
μs
270
-55 ... +175
175
-55 ... +175
300
260
1.13/10
6.0
5.5
W
°C
°C
°C
°C
°C
Nm/lb.in
g
g
TO-247 (IXYH)
G
CE
TO-3P (IXYQ)
Tab
G
C
E
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
Optimized for Low 5-30kHz Switching
Square RBSOA
Anti-Parallel Fast Diode
Avalanche Rated
Short Circuit Capability
Advantages
High Power Density
Extremely Rugged
Low Gate Drive Requirement
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
30A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
650 V
3.5 6.0 V
10 A
1.5 mA
100 nA
1.8 2.1 V
2.2 V
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2014 IXYS CORPORATION, All Rights Reserved
DS100637(11/14)

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Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs IC = 30A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 30A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 30A, VGE = 15V
VCE = 400V, RG = 10
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 150°C
IC = 30A, VGE = 15V
VCE = 400V, RG = 10
Note 2
RthJC
RthCS
Characteristic Values
Min.
Typ. Max.
11 19
S
1240
172
30
pF
pF
pF
45 nC
8 nC
23 nC
17
38
0.83
87
33
0.64
ns
ns
mJ
ns
ns
1.20 mJ
17 ns
40 ns
1.63 mJ
106 ns
93 ns
1.00 mJ
0.55 °C/W
0.25 °C/W
Reverse Diode (FRED)
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
VF IF = 30A, VGE = 0V, Note 1
tIrrrr
RthJC
I-FdiF=/d3t0=A5, 0V0GAE /=μs0,VV,R = 400V
Characteristic Values
Min. Typ. Max.
TJ = 150°C
TTJJ
=
=
150°C
150°C
1.4
23
133
2.5 V
V
A
ns
0.60 °C/W
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
IXYH30N65B3D1
IXYQ30N65B3D1
TO-247 Outline
123
P
e
Terminals: 1 - Gate
2 - Collector
3 - Emitted
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
bb12
1.65 2.13
2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-3P Outline
1 = Gate
3 = Emitter
2,4 = Collector
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

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60
50
40
30
20
10
0
0
60
50
40
30
20
10
0
0
6
5
Fig. 1. Output Characteristics @ TJ = 25ºC
VGE = 15V
13V
12V
11V
10V
9V
8V
7V
0.5 1 1.5 2 2.5 3 3.5
VCE (V)
Fig. 3. Output Characteristics @ TJ = 150ºC
VGE = 15V
13V
12V
11V
10V
9V
8V
7V
6V
0.5 1 1.5 2 2.5 3 3.5
VCE (V)
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
4
TJ = 25ºC
4
I C = 60A
3
30A
2
15A
1
8 9 10 11 12 13 14 15
VGE (V)
IXYH30N65B3D1
IXYQ30N65B3D1
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
180
160 VGE = 15V
140
120
100
80
60
40
20
0
0
14V
13V
12V
11V
10V
9V
8V
7V
5 10 15 20 25 30
VCE (V)
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
2.0
VGE = 15V
1.8
1.6
I C =60A
1.4
1.2 I C = 30A
1.0
I C = 15A
0.8
0.6
-50 -25 0 25 50 75 100 125 150 175
TJ (ºC)
Fig. 6. Input Admittance
50
40
30
TJ = 150ºC
20 25ºC
- 40ºC
10
0
3 4 5 6 7 8 9 10 11
VGE (V)
© 2014 IXYS CORPORATION, All Rights Reserved

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28
VCE = 10V
24
Fig. 7. Transconductance
TJ = - 40ºC
20 25ºC
16 150ºC
12
8
4
0
0 5 10 15 20 25 30 35 40 45 50 55
IC (A)
10,000
f = 1 MHz
1,000
Fig. 9. Capacitance
Cies
Coes
100
Cres
10
0
5 10 15 20 25 30 35 40
VCE (V)
Fig. 11. Forward-Bias Safe Operating Area
1000
VCE(sat) Limit
100
IXYH30N65B3D1
IXYQ30N65B3D1
16
14 VCE = 325V
IC = 30A
12 IG = 10mA
Fig. 8. Gate Charge
10
8
6
4
2
0
0 5 10 15 20 25 30 35 40 45 50
QG (nC)
Fig. 10. Reverse-Bias Safe Operating Area
70
60
50
40
30
20
10
0
100
TJ = 150ºC
RG = 10
dv / dt < 10V / ns
200
300
400
VCE (V)
500
600
700
Fig. 12. Maximum Transient Thermal Impedance (IGBT)
1
25µs
10 0.1
100µs
1
0.1
1
TJ = 175ºC
TC = 25ºC
Single Pulse
10
VDS (V)
100
1ms
10ms
DC
1000
0.01
0.00001
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.0001
0.001
0.01
Pulse Width (s)
0.1
1

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Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
2.8
Eoff Eon - - - -
2.4 TJ = 150ºC , VGE = 15V
VCE = 400V
I C = 60A
2.0
10
8
6
1.6 4
I C = 30A
1.2 2
0.8
10 20 30 40 50 60 70
RG ()
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
2.8
Eoff Eon - - - -
2.4 RG = 10, VGE = 15V
VCE = 400V
2.0
0
80
7
6
5
1.6
I C = 60A
1.2
4
3
0.8
IC = 30A
0.4
2
1
0.0 0
25 50 75 100 125 150
TJ (ºC)
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
160 200
140
tfi
td(off) - - - -
180
RG = 10, VGE = 15V
120
VCE = 400V
160
100 140
80 TJ = 150ºC
120
60
40 TJ = 25ºC
100
80
20 60
0 40
15 20 25 30 35 40 45 50 55 60
IC (A)
© 2014 IXYS CORPORATION, All Rights Reserved
IXYH30N65B3D1
IXYQ30N65B3D1
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
2.4
Eoff Eon - - - -
2.0 RG = 10, VGE = 15V
VCE = 400V
1.6
TJ = 150ºC
6
5
4
1.2 3
TJ = 25ºC
0.8 2
0.4 1
0.0 0
15 20 25 30 35 40 45 50 55 60
IC (A)
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
140 640
130 t f i
td(off) - - - -
TJ = 150ºC, VGE = 15V
120 VCE = 400V
560
480
110 400
I C = 30A
100 320
90
I C = 60A
240
80 160
70 80
60 0
10 20 30 40 50 60 70 80
RG ()
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
160
140 t f i
td(off) - - - -
RG = 10, VGE = 15V
120 VCE = 400V
100
140
130
120
110
80 100
60 I C = 30A, 60A
40
90
80
20 70
0 60
25 50 75 100 125 150
TJ (ºC)