IXYT80N90C3.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 IXYT80N90C3 데이타시트 다운로드

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XPTTM 900V IGBT
GenX3TM
High-Speed IGBT
for 20-50 kHz Switching
IXYT80N90C3
IXYH80N90C3
Symbol
VCES
VCGR
VGES
VGEM
IICLR25MS
IC110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TTeC rm=in2a5l°CCur(rCehnitpLCimaiptability)
TC = 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 150°C, RG = 2
Clamped Inductive Load
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-247)
TO-268
TO-247
Maximum Ratings
900 V
900 V
±20 V
±30 V
165 A
160 A
80 A
360 A
ICM = 160
@VCE VCES
830
A
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
1.13/10 Nm/lb.in.
4g
6g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
60A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
950 V
3.5 5.5 V
25 A
750 A
100 nA
2.3 2.7 V
2.9 V
VCES = 900V
IC110 = 80A
VCE(sat)  2.7V
tfi(typ) = 86ns
TO-268 (IXYT)
G
E
C (Tab)
TO-247 (IXYH)
GCE
C (Tab)
G = Gate
E = Emiiter
C = Collector
Tab = Collector
Features
Optimized for Low Switching Losses
Square RBSOA
Positive Thermal Coefficient of
Vce(sat)
International Standard Packages
Advantages
High Power Density
Low Gate Drive Requirement
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2015 IXYS CORPORATION, All Rights Reserved
DS100446B(12/15)

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Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs IC = 60A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 80A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 80A, VGE = 15V
VCE = 0.5 • VCES, RG = 2
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 150°C
IC = 80A, VGE = 15V
VCE = 0.5 • VCES, RG = 2
Note 2
RthJC
RthCS
TO-247
Characteristic Values
Min.
Typ. Max.
23 38
S
4550
243
77
pF
pF
pF
145 nC
42 nC
65 nC
34 ns
103 ns
4.3 mJ
90 ns
86 ns
1.9 2.7 mJ
34 ns
100 ns
5.7 mJ
103 ns
98 ns
2.5 mJ
0.18 °C/W
0.21 °C/W
IXYT80N90C3
IXYH80N90C3
TO-268 Outline
Terminals: 1 - Gate
3 - Emitter
2,4 - Collector
TO-247 Outline
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
123
P
e
Terminals: 1 - Gate
3 - Emitter
2 - Collector
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
bb12
1.65 2.13
2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

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160
140
120
100
80
60
40
20
0
0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGE = 15V
14V
13V
12V
11V
10V
9V
8V
7V
0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6
VCE - Volts
4
Fig. 3. Output Characteristics @ TJ = 150ºC
160
VGE = 15V
140 13V
12V
120
11V
100
80
10V
60
9V
40
8V
20
6V
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
7
TJ = 25ºC
6
5
I C = 160A
4
80A
3 40A
2
1
8 9 10 11 12 13 14 15
VGE - Volts
IXYT80N90C3
IXYH80N90C3
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
300 VGE = 15V
14V
250 13V
200
150
100
50
0
0
12V
11V
10V
9V
7V
5 10 15 20 25 30
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
2.2
VGE = 15V
2.0
1.8 I C = 160A
1.6
1.4
1.2 I C = 80A
1.0
0.8
I C = 40A
0.6
0.4
-50
-25
0 25 50 75 100
TJ - Degrees Centigrade
125
150
Fig. 6. Input Admittance
200
180
160
140
120
100
TJ = 150ºC
25ºC
- 40ºC
80
60
40
20
0
4 5 6 7 8 9 10 11 12
VGE - Volts
© 2015 IXYS CORPORATION, All Rights Reserved

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IXYT80N90C3
IXYH80N90C3
Fig. 7. Transconductance
80
TJ = - 40ºC
70
60 25ºC
50 150ºC
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180 200 220
IC - Amperes
10,000
Fig. 9. Capacitance
1,000
Cies
Coes
100
Cres
f = 1 MHz
10
0
5 10 15 20 25 30 35 40
VCE - Volts
16
VCE = 450V
14 IC = 80A
12 IG = 10mA
Fig. 8. Gate Charge
10
8
6
4
2
0
0 20 40 60 80 100 120 140
QG - NanoCoulombs
Fig. 10. Reverse-Bias Safe Operating Area
180
160
140
120
100
80
60
40 TJ = 150ºC
RG = 2
20 dv / dt < 10V / ns
0
100 200 300 400 500 600 700 800 900
VCE - Volts
Fig. 11. Forward-Bias Safe Operating Area
1000
VCE(sat) Limit
Fig. 12. Maximum Transient Thermal Impedance
1
100
25µs
0.1
10 100µs
1ms
0.01
1
0.1
1
TJ = 175ºC
TC = 25ºC
Single Pulse
10
VDS - Volts
100
10ms
DC
0.001
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

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Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
3.4
Eoff Eon - - - -
3.0 TJ = 150ºC , VGE = 15V
VCE = 450V
2.6
I C = 80A
2.2
12
10
8
6
1.8 4
1.4 I C = 40A
2
1.0 0
2 3 4 5 6 7 8 9 10 11 12 13 14 15
RG - Ohms
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
4.0
3.5 Eoff
Eon - - - -
RG = 2VGE = 15V
3.0 VCE = 450V
2.5
IC = 80A
8
7
6
5
2.0 4
1.5 3
1.0 2
IC = 40A
0.5 1
0.0
25
50 75 100 125
TJ - Degrees Centigrade
0
150
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
225 150
200
tfi
td(off) - - - -
140
RG = 2, VGE = 15V
175
VCE = 450V
130
150 120
TJ = 150ºC
125 110
100 100
75 TJ = 25ºC
90
50 80
25 70
40 50 60 70 80 90 100
IC - Amperes
IXYT80N90C3
IXYH80N90C3
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
5
Eoff Eon - - - -
4 RG = 2VGE = 15V
VCE = 450V
10
8
36
2 TJ = 150ºC
4
1 TJ = 25ºC
2
00
40 50 60 70 80 90 100
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
250 360
225 t f i
td(off) - - - -
TJ = 150ºC, VGE = 15V
200 VCE = 450V
320
280
175
I C = 40A
150
240
200
125 160
I C = 80A
100 120
75 80
50 40
2 3 4 5 6 7 8 9 10 11 12 13 14 15
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
200 180
t f i td(off) - - - -
175 RG = 2, VGE = 15V
VCE = 450V
150
I C = 40A
160
140
125 120
100 100
I C = 80A
75 80
50
25
50 75 100 125
TJ - Degrees Centigrade
60
150
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