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Advance Technical Information
1200V XPTTM GenX3TM
IGBT w/ Diode
(Electrically Isolated Tab)
High-Speed IGBT
for 20-50 kHz Switching
IXYJ30N120C3D1
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
VISOL
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1M
Continuous
Transient
TC = 25°C
TTCC
= 110°C
= 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 10
Clamped Inductive Load
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
50/60 Hz, RM, t = 1min
Maximum Ratings
1200
1200
V
V
±20 V
±30 V
32 A
14 A
15 A
128 A
20 A
400 mJ
ICM = 60
VCE VCES
140
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
260 °C
1.13/10 Nm/lb.in.
2500
5
V~
g
VCES = 1200V
IC110 = 14A
VCE(sat)  3.3V
tfi(typ) = 88ns
ISO TO-247TM
E153432
G
CE
G = Gate
E = Emitter
Isolated Tab
C = Collector
Features
Optimized for Low Switching Losses
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
2500V~ Electrical Isolation
Square RBSOA
Positive Thermal Coefficient of
Vce(sat)
Anti-Parallel Ultra Fast Diode
Avalanche Rated
Advantages
High Power Density
Low Gate Drive Requirement
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 125C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
30A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
1200
V
3.0 5.0 V
25 A
350 μA
100 nA
3.3 V
3.7 V
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2013 IXYS CORPORATION, All Rights Reserved
DS100559(9/13)

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Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs IC = 30A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 30A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 30A, VGE = 15V
VCE = 0.5 • VCES, RG = 10
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 150°C
IC = 30A, VGE = 15V
VCE = 0.5 • VCES, RG = 10
Note 2
RthJC
RthCS
Characteristic Values
Min.
Typ. Max.
10 17
S
1640
140
38
pF
pF
pF
69 nC
9 nC
34 nC
19 ns
40 ns
2.6 mJ
130 ns
88 ns
1.1 mJ
19 ns
52 ns
6.0 mJ
156 ns
140 ns
1.6 mJ
0.89 °C/W
0.21 °C/W
IXYJ30N120C3D1
ISO TO-247 (IXYJ) OUTLINE
PINS:
1 = Gate
2 = Drain
3 = Source
4 = Isolated
Reverse Diode (FRED)
(TJ = 25°C, Unless Otherwise Specified)
Symbol
Test Conditions
Characteristic Value
Min. Typ. Max.
VF
IRM
trr
RthJC
IF = 30A,VGE = 0V, Note 1
TJ = 150°C
IF = 30A,VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C
VR = 600V
TJ = 100°C
3.00 V
1.75 V
9A
195 ns
1.25 °C/W
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

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IXYJ30N120C3D1
60
50
40
30
20
10
0
0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGE = 15V
13V
12V
11V
10V
9V
8V
7V
6V
0.5 1 1.5 2 2.5 3 3.5 4 4.5
VCE - Volts
5
60
50
40
30
20
10
0
0
8
7
6
5
4
3
2
1
7
Fig. 3. Output Characteristics @ TJ = 150ºC
VGE = 15V
13V
12V
11V
10V
9V
8V
7V
6V
5V
1234567
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
TJ = 25ºC
I C = 60A
30A
15A
8 9 10 11 12 13 14 15
VGE - Volts
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
160
VGE = 15V
140
14V
120
13V
100 12V
80 11V
60 10V
40
20
0
0
9V
8V
7V
6V
5 10 15 20 25 30
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
2.4
2.2 VGE = 15V
2.0
I C = 60A
1.8
1.6
1.4 I C = 30A
1.2
1.0
0.8 I C = 15A
0.6
0.4
-50 -25 0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
Fig. 6. Input Admittance
80
70
TJ = - 40ºC
25ºC
60 150ºC
50
40
30
20
10
0
4 5 6 7 8 9 10 11
VGE - Volts
© 2013 IXYS CORPORATION, All Rights Reserved

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IXYJ30N120C3D1
Fig. 7. Transconductance
25
TJ = - 40ºC
20
25ºC
15 150ºC
10
5
0
0 10 20 30 40 50 60 70 80 90 100
IC - Amperes
16
14 VCE = 600V
IC = 30A
12 IG = 10mA
Fig. 8. Gate Charge
10
8
6
4
2
0
0 10 20 30 40 50 60 70
QG - NanoCoulombs
10,000
f = 1 MHz
1,000
100
Fig. 9. Capacitance
Cies
Coes
10
0
Cres
5 10 15 20 25 30 35 40
VCE - Volts
Fig. 10. Reverse-Bias Safe Operating Area
70
60
50
40
30
20
TJ = 150ºC
10 RG = 10
dv / dt < 10V / ns
0
200 300 400 500
600 700 800 900 1000 1100 1200 1300
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance (IGBT)
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

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Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
5.0
4.5 Eoff
Eon - - - -
TJ = 150ºC , VGE = 15V
4.0 VCE = 600V
3.5
I C = 60A
27
24
21
18
3.0 15
2.5 12
2.0 9
1.5 6
I C = 30A
1.0 3
0.5 0
10 15 20 25 30 35 40 45 50 55
RG - Ohms
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
5.0
4.5 Eoff
Eon - - - -
4.0 RG = 10, VGE = 15V
VCE = 600V
3.5
3.0 I C = 60A
2.5
2.0
1.5
1.0 IC = 30A
0.5
0.0
25
50 75 100
TJ - Degrees Centigrade
125
20
16
12
8
4
0
150
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
220 260
200
tfi
td(off) - - - -
240
180
RG = 10, VGE = 15V
220
VCE = 600V
160 200
140 180
120
TJ = 150ºC
160
100 140
80 120
60
TJ = 25ºC
100
40 80
20 60
15 20 25 30 35 40 45 50 55 60
IC - Amperes
© 2013 IXYS CORPORATION, All Rights Reserved
IXYJ30N120C3D1
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
3.0
Eoff Eon - - - -
2.5 RG = 10, VGE = 15V
VCE = 600V
2.0
TJ = 150ºC
1.5
TJ = 25ºC
1.0
20
16
12
8
4
0.5 0
15 20 25 30 35 40 45 50 55 60
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
220 550
200 t f i
td(off) - - - -
180 TJ = 150ºC, VGE = 15V
VCE = 600V
160
500
450
400
140
120 I C = 30A
350
300
100 250
80 I C = 60A
60
200
150
40 100
20 50
15 20 25 30 35 40 45 50 55
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
180 180
160 t f i
td(off) - - - -
RG = 10, VGE = 15V
140 VCE = 600V
170
160
120
I C = 30A
100
150
140
80 130
60
I C = 60A
40
120
110
20
25
50 75 100 125
TJ - Degrees Centigrade
100
150