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Advance Technical Information
1200V XPTTM GenX3TM
IGBT w/ Diode
(Electrically Isolated Tab)
High-Speed IGBT
for 20-50 kHz Switching
IXYJ30N120C3D1
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
VISOL
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1M
Continuous
Transient
TC = 25°C
TTCC
= 110°C
= 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 10
Clamped Inductive Load
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
50/60 Hz, RM, t = 1min
Maximum Ratings
1200
1200
V
V
±20 V
±30 V
32 A
14 A
15 A
128 A
20 A
400 mJ
ICM = 60
VCE VCES
140
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
260 °C
1.13/10 Nm/lb.in.
2500
5
V~
g
VCES = 1200V
IC110 = 14A
VCE(sat)  3.3V
tfi(typ) = 88ns
ISO TO-247TM
E153432
G
CE
G = Gate
E = Emitter
Isolated Tab
C = Collector
Features
Optimized for Low Switching Losses
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
2500V~ Electrical Isolation
Square RBSOA
Positive Thermal Coefficient of
Vce(sat)
Anti-Parallel Ultra Fast Diode
Avalanche Rated
Advantages
High Power Density
Low Gate Drive Requirement
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 125C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
30A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
1200
V
3.0 5.0 V
25 A
350 μA
100 nA
3.3 V
3.7 V
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2013 IXYS CORPORATION, All Rights Reserved
DS100559(9/13)

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Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs IC = 30A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 30A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 30A, VGE = 15V
VCE = 0.5 • VCES, RG = 10
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 150°C
IC = 30A, VGE = 15V
VCE = 0.5 • VCES, RG = 10
Note 2
RthJC
RthCS
Characteristic Values
Min.
Typ. Max.
10 17
S
1640
140
38
pF
pF
pF
69 nC
9 nC
34 nC
19 ns
40 ns
2.6 mJ
130 ns
88 ns
1.1 mJ
19 ns
52 ns
6.0 mJ
156 ns
140 ns
1.6 mJ
0.89 °C/W
0.21 °C/W
IXYJ30N120C3D1
ISO TO-247 (IXYJ) OUTLINE
PINS:
1 = Gate
2 = Drain
3 = Source
4 = Isolated
Reverse Diode (FRED)
(TJ = 25°C, Unless Otherwise Specified)
Symbol
Test Conditions
Characteristic Value
Min. Typ. Max.
VF
IRM
trr
RthJC
IF = 30A,VGE = 0V, Note 1
TJ = 150°C
IF = 30A,VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C
VR = 600V
TJ = 100°C
3.00 V
1.75 V
9A
195 ns
1.25 °C/W
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

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IXYJ30N120C3D1
60
50
40
30
20
10
0
0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGE = 15V
13V
12V
11V
10V
9V
8V
7V
6V
0.5 1 1.5 2 2.5 3 3.5 4 4.5
VCE - Volts
5
60
50
40
30
20
10
0
0
8
7
6
5
4
3
2
1
7
Fig. 3. Output Characteristics @ TJ = 150ºC
VGE = 15V
13V
12V
11V
10V
9V
8V
7V
6V
5V
1234567
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
TJ = 25ºC
I C = 60A
30A
15A
8 9 10 11 12 13 14 15
VGE - Volts
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
160
VGE = 15V
140
14V
120
13V
100 12V
80 11V
60 10V
40
20
0
0
9V
8V
7V
6V
5 10 15 20 25 30
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
2.4
2.2 VGE = 15V
2.0
I C = 60A
1.8
1.6
1.4 I C = 30A
1.2
1.0
0.8 I C = 15A
0.6
0.4
-50 -25 0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
Fig. 6. Input Admittance
80
70
TJ = - 40ºC
25ºC
60 150ºC
50
40
30
20
10
0
4 5 6 7 8 9 10 11
VGE - Volts
© 2013 IXYS CORPORATION, All Rights Reserved