IXYP8N90C3.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 IXYP8N90C3 데이타시트 다운로드

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900V XPTTM IGBT
GenX3TM
High-Speed IGBT
for 20-50 kHz Switching
IXYY8N90C3
IXYP8N90C3
VCES = 900V
IC110 = 8A
VCE(sat)  3.0V
tfi(typ) = 130ns
Symbol
VCES
VCGR
VGES
VGEM
IICC12150
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TTCC
= 25°C
= 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 30
Clamped Inductive Load
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-220)
TO-252
TO-220
Maximum Ratings
900 V
900 V
±20 V
±30 V
20 A
8A
48 A
4A
15 mJ
ICM = 16
@VCE VCES
125
A
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
1.13/10 Nm/lb.in.
0.35 g
3.00 g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC = 8A, VGE = 15V, Note 1 TJ = 150C
Characteristic Values
Min. Typ. Max.
950 V
3.5 6.0 V
10 A
150 μA
100 nA
2.15 3.00 V
2.75 V
TO-252 (IXYY)
G
E
TO-220 (IXYP)
C (Tab)
GC E
C (Tab)
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
Optimized for Low Switching Losses
Square RBSOA
Positive Thermal Coefficient of
Vce(sat)
Avalanche Rated
International Standard Packages
Advantages
High Power Density
Low Gate Drive Requirement
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2014 IXYS CORPORATION, All Rights Reserved
DS100399B(12/14)

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Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs IC = 8A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 8A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 8A, VGE = 15V
VCE = 0.5 • VCES, RG = 30
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 125°C
IC = 8A, VGE = 15V
VCE = 0.5 • VCES, RG = 30
Note 2
RthJC
RthCS
TO-252
TO-220
Characteristic Values
Min.
Typ. Max.
2.9 4.8
S
400 pF
24 pF
7.8 pF
13.3 nC
3.4 nC
5.8 nC
16
20
0.46
40
130
0.18
ns
ns
mJ
ns
ns
0.50 mJ
17 ns
22 ns
1.00 mJ
75 ns
163 ns
0.22 mJ
1.20 °C/W
0.35 °C/W
0.50 °C/W
IXYY8N90C3
IXYP8N90C3
TO-252 AA Outline
1. Gate
2. Collector
3. Emitter
4. Collector
Bottom Side
Dim.
A
A1
A2
b
b1
b2
c
c1
D
D1
E
E1
e
e1
H
L
L1
L2
L3
Millimeter
Min. Max.
2.19 2.38
0.89 1.14
0 0.13
0.64 0.89
0.76 1.14
5.21 5.46
0.46 0.58
0.46 0.58
5.97 6.22
4.32 5.21
6.35 6.73
4.32 5.21
2.28 BSC
4.57 BSC
9.40 10.42
0.51 1.02
0.64 1.02
0.89 1.27
2.54 2.92
Inches
Min. Max.
0.086 0.094
0.035 0.045
0 0.005
0.025 0.035
0.030 0.045
0.205 0.215
0.018 0.023
0.018 0.023
0.235 0.245
0.170 0.205
0.250 0.265
0.170 0.205
0.090 BSC
0.180 BSC
0.370 0.410
0.020 0.040
0.025
0.035
0.100
0.040
0.050
0.115
TO-220 Outline
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
Pins: 1 - Gate
3 - Emitter
2 - Collector
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

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16
14
12
10
8
6
4
2
0
0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGE = 15V
13V
12V
11V
10V
9V
8V
7V
0.5 1 1.5 2 2.5 3 3.5
VCE - Volts
16
14
12
10
8
6
4
2
0
0
Fig. 3. Output Characteristics @ TJ = 150ºC
VGE = 15V
13V
12V
11V
10V
9V
8V
7V
6V
0.5 1 1.5 2 2.5 3 3.5 4 4.5
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage vs.
7 Gate-to-Emitter Voltage
TJ = 25ºC
6
5
4
I C = 16A
3
8A
2
4A
1
8 9 10 11 12 13 14 15
VGE - Volts
IXYY8N90C3
IXYP8N90C3
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
45
40
VGE = 15V
35
30
25
20
15
10
5
0
0
13V
12V
11V
10V
9V
8V
7V
5 10 15 20 25 30
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
2.0
VGE = 15V
1.8
1.6
I C = 16A
1.4
1.2 I C = 8A
1.0
0.8
I C = 4A
0.6
-50
-25
0
25 50 75 100 125 150 175
TJ - Degrees Centigrade
Fig. 6. Input Admittance
20
18
16
14
12
10
8 TJ = 150ºC
6
25ºC
- 40ºC
4
2
0
3.5 4.5 5.5 6.5 7.5 8.5 9.5 10.5 11.5
VGE - Volts
© 2014 IXYS CORPORATION, All Rights Reserved

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IXYY8N90C3
IXYP8N90C3
Fig. 7. Transconductance
8
7 TJ = - 40ºC
6 25ºC
5
150ºC
4
3
2
1
0
0 2 4 6 8 10 12 14 16 18 20 22
IC - Amperes
16
14 VCE = 450V
IC = 8A
12 I G = 10mA
Fig. 8. Gate Charge
10
8
6
4
2
0
0 2 4 6 8 10 12 14
QG - NanoCoulombs
1,000
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
18
Cies
16
14
100 12
Coes
10
8
10 6
f = 1 MHz
1
05
10
10
Cres
4 TJ = 150ºC
RG = 30
2 dv / dt < 10V / ns
0
15 20 25 30 35 40
200 300 400 500 600 700 800 900
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
3 aaaa
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

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Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0.6
Eoff Eon - - - -
0.5 TJ = 125ºC , VGE = 15V
VCE = 450V
0.4
I C = 16A
5
4
3
0.3 2
I C = 8A
0.2 1
0.1
30
0.40
0.35
0.30
0
60 90 120 150 180 210 240 270 300
RG - Ohms
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
Eoff Eon - - - -
RG = 30VGE = 15V
VCE = 450V
I C = 16A
2.4
2.0
1.6
0.25 1.2
0.20 0.8
IC = 8A
0.15 0.4
0.10
25
50 75
TJ - Degrees Centigrade
100
0.0
125
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
200 100
180
tfi
td(off) - - - -
90
RG = 30, VGE = 15V
160
VCE = 450V
80
140 TJ = 125ºC
70
120 60
100
TJ = 25ºC
80
50
40
60 30
40
8
20
9 10 11 12 13 14 15 16
IC - Amperes
IXYY8N90C3
IXYP8N90C3
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
0.40
Eoff Eon - - - -
0.35 RG = 30VGE = 15V
VCE = 450V
0.30 TJ = 125ºC
2.4
2.0
1.6
0.25 1.2
0.20 0.8
TJ = 25ºC
0.15 0.4
0.10
8
0.0
9 10 11 12 13 14 15 16
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
280 280
t f i td(off) - - - -
240 TJ = 125ºC, VGE = 15V
VCE = 450V
200
240
200
160 I C = 8A
160
120 120
80 80
I C = 16A
40 40
00
30 60 90 120 150 180 210 240 270 300
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
220 110
200 t f i
td(off) - - - -
RG = 30, VGE = 15V
180 VCE = 450V
160
I C = 8A
100
90
80
140 70
120 60
100 50
80
I C = 16A
40
60 30
40
25
50 75 100
TJ - Degrees Centigrade
20
125
© 2014 IXYS CORPORATION, All Rights Reserved