IXYT20N120C3D1HV.pdf 데이터시트 (총 7 페이지) - 파일 다운로드 IXYT20N120C3D1HV 데이타시트 다운로드

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1200V XPTTM IGBT
GenX3TM w/ Diode
High-Speed IGBT
for 20-50 kHz Switching
IXYT20N120C3D1HV
VCES = 1200V
IC110 = 17A
VCE(sat)  3.4V
tfi(typ) = 108ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1M
Continuous
Transient
TC = 25°C
TTCC
= 110°C
= 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 10
Clamped Inductive Load
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Maximum Ratings
1200
1200
V
V
±20 V
±30 V
36 A
17 A
20 A
88 A
10 A
400 mJ
ICM = 40
@VCE VCES
230
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
260 °C
4g
TO-268HV
G
E
C (Tab)
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
Optimized for Low Switching Losses
Square RBSOA
Positive Thermal Coefficient of
Vce(sat)
High Voltage Package
Anti-Parallel Ultra Fast Diode
Avalanche Rated
Advantages
High Power Density
Low Gate Drive Requirement
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 125C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
20A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
1200
V
3.0 5.0 V
25 A
350 μA
100 nA
3.4 V
4.0 V
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2013 IXYS CORPORATION, All Rights Reserved
DS100514B(8/13)

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Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs IC = 20A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 20A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 20A, VGE = 15V
VCE = 0.5 • VCES, RG = 10
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 150°C
IC = 20A, VGE = 15V
VCE = 0.5 • VCES, RG = 10
Note 2
RthJC
IXYT20N120C3D1HV
Characteristic Values
Min.
Typ. Max.
7.0 11.5
S
1110
120
27
pF
pF
pF
53 nC
9 nC
22 nC
20 ns
29 ns
1.3 mJ
90 ns
108 ns
0.5 1.0 mJ
20 ns
40 ns
3.7 mJ
115 ns
105 ns
0.7 mJ
0.54 °C/W
TO-268HV Outline
1 - Gate
2 - Emitter
3 - Collector
Reverse Diode (FRED)
(STyJm=b2o5l°C,
Unless
Test
Otherwise Specified)
Conditions
Characteristic Value
Min. Typ. Max.
VF
IRM
trr
RthJC
IF = 30A,VGE = 0V, Note 1
TJ = 150°C
IF = 30A,VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C
VR = 600V
TJ = 100°C
3.00 V
1.75 V
9A
195 ns
0.90 °C/W
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

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IXYT20N120C3D1HV
Fig. 1. Output Characteristics @ TJ = 25ºC
40
VGE = 15V
35 13V
11V
10V
30 9V
25
8V
20
15
10 7V
5
6V
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
VCE - Volts
40
35
30
25
20
15
10
5
0
0
Fig. 3. Output Characteristics @ TJ = 150ºC
VGE = 15V
13V
11V
10V
9V
8V
7V
6V
5V
12345678
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
11
TJ = 25ºC
9
7
I C = 40A
5
20A
3
10A
1
6 7 8 9 10 11 12 13 14 15
VGE - Volts
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
100
VGE = 15V
80
13V
12V
60 11V
10V
40
9V
20
0
0
8V
7V
6V
5 10 15 20 25 30
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
2.4
VGE = 15V
2.0
I C = 40A
1.6
I C = 20A
1.2
0.8 I C = 10A
0.4
-50
-25
0
25 50 75 100 125 150 175
TJ - Degrees Centigrade
Fig. 6. Input Admittance
50
45
TJ = - 40ºC
25ºC
40 150ºC
35
30
25
20
15
10
5
0
3.5 4.5 5.5 6.5 7.5 8.5 9.5 10.5
VGE - Volts
© 2013 IXYS CORPORATION, All Rights Reserved