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SS3613
CMOS Omnipolar High Sensitivity Micropower Hall Switch
Features
Micropower consumption for battery powered applications
Omnipolar, output switches with absolute value of North or South pole from magnet
Operation down to 2.5V
High sensitivity for direct reed switch replacement applications
CMOS inverter output(no pull-up resistance needed)
3 pin TSOT23 (suffix ST)
3 pin SIP (suffix UA)
General Description
The SS3613 Omnipolar Hall effect sensor IC is fab-
ricated from mixed signal CMOS technology .It in-
corporates advanced chopper-stabilization techniques
to provide accurate and stable magnetic switch points.
The circuit design provides an internally controlled
clocking mechanism to cycle power to the Hall ele-
ment and analog signal processing circuits. This
serves to place the high current-consuming portions
of the circuit into a “Sleep” mode. Periodically the
device is “Awakened” by this internal logic and the
magnetic flux from the Hall element is evaluated
against the predefined thresholds. If the flux density
is above or below the Bop/Brp thresholds then the
output transistor is driven to change states according-
ly. While in the “Sleep” cycle the output transistor is
latched in its previous state. The design has been op-
timized for service in applications requiring extended
operating lifetime in battery powered systems.
The output transistor of the SS3613 will be latched on
(Bop) in the presence of a sufficiently strong South or
North magnetic field facing the marked side of the
package. The output will be latched off (Brp) in the
absence of a magnetic field.
Applications
Solid state switch
Handheld Wireless Handset Awake Switch
Lid close sensor for battery powered devices
Magnet proximity sensor for reed switch replacement in low duty cycle applications
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SS3613
CMOS Omnipolar High Sensitivity Micropower Hall Switch
Typical Application Circuit
SEC's pole-independent sensing technique allows for
operation with either a north pole or south pole mag-
net orientation, enhancing the manufacturability of the
device. The state-of-the-art technology provides the
same output polarity for either pole face.
It is strongly recommended that an external bypass
capacitor be connected (in close proximity to the Hall
sensor) between the supply and ground of the device
to reduce both external noise and noise generated by
the chopper-stabilization technique. This is especially
true due to the relatively high impedance of battery
supplies.
Functional Block Diagram
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SS3613
CMOS Omnipolar High Sensitivity Micropower Hall Switch
Pin Definitions and Descriptions
TSOT Pin SIP Pin
11
23
32
Name
VDD
OUT
GND
Type
Supply
Output
Ground
Function
Supply Voltage pin
Open Drain Output pin
Ground pin
Internal Timing Circuit
Current
Iaw
Period
Iav
Isp
0
Awake Taw:120μs
Sleep Tsl:70ms
Sample & Out-
put Latched
Time
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SS3613
CMOS Omnipolar High Sensitivity Micropower Hall Switch
Absolute Maximum Ratings
Parameter
Symbol
Value
Units
Supply Voltage(operating)
VDD
6
V
Supply Current
IDD 5 mA
Output Voltage
VOUT
6
V
Output Curent
IOUT
5
mA
Operating Temperature Range
TA -40 to 85
°C
Storage Temperature Rang
TS -50 to 150
°C
ESD Sensitivity
- 4000 V
Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-maximum rated conditions for ex-
tended periods may affect device reliability.
DC Electrical Characteristics
DC Operating Parameters: TA = 25°C, VDD=2.75V.
Parameter
Symbol
Test Conditions
Operating voltage
VDD
Operating
Supply current
IDD
Average
Output Current
IOUT
Saturation Voltage
VSAT
IOUT=1mA
Awake mode time
TAW
Operating
Sleep mode time
TSL
Operating
Min Typ Max Units
2.5 3 5.5
V
5 μA
1.0 mA
0.4 V
175 μS
70 mS
Magnetic Characteristics
Output Voltage(V)
3.0
2.5
OFF
2.0
BOPN
1.5
BRPN
1.0
BRPS
BOPS
0.5
ON
0
-80 -60 -40 -20 0 20 40 60 80
Magnetic Flux(Gauss)
Operating Parameters: TA = 25°C, VDD=2.75VDC.
PARAMETER
Symbol
Operating Point
Bop
Release Point
Brp
Hysteresis
Bhys
Min
-
+/-5
-
Type
+/-35
+/-27
14
Max
+/-60
-
-
Units
Gs
Gs
Gs
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SS3613
CMOS Omnipolar High Sensitivity Micropower Hall Switch
ESD Protection
Human Body Model (HBM) tests according to: Mil. Std. 883F method 3015.7
Parameter
ESD Voltage
Symbol
VESD
Limit Values
Min Max
±4
Unit
kV
Notes
Performance Characteristics
Unique Features
CMOS Hall IC Technology
The chopper stabilized amplifier uses switched capacitor techniques to eliminate the amplifier offset voltage,
which, in bipolar devices, is a major source of temperature sensitive drift. CMOS makes this advanced technique
possible. The CMOS chip is also much smaller than a bipolar chip, allowing very sophisticated circuitry to be
placed in less space. The small chip size also contributes to lower physical stress and less power consumption.
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