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2SD669/2SD669A
Elektronische Bauelemente
NPN Type
Plastic Encapsulate Transistors
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-126C
FEATURES
Power dissipation
PCM : 1mW Tamb=25
Collector current
ICM : 1.5 A
Collector-base voltage
V(BR)CBO : 180 V
Collector-emitter voltage
VCEO
2SD669 : 120 V
2SD669A : 160 V
Operating and storage junction temperature range
TJ Tstg: -55 to +150
7.6±0.2
2.7±0.2
1.3±0.2
4.0±0.1
10.8±0.2
O3.1± 0.1
12 3
2.2±0.1
15.5±0.2
1.27±0.1
0.76±0.1
4.58±0.1
2.29 Typ.
0.5± 0.1
1: Emitter
2: Collector
3: Base
Dimens ions in Millimeters
CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
V(BR)CBO Ic= 1mA IE=0
V(BR)CEO Ic= 10mA IB=0
V(BR)EBO
ICBO
IEBO
IE= 1mA Ic=0
VCB=160 V , IE=0
VEB= 4V , IC =0
hFE(1) * VCE=5V, IC= 150 mA
hFE(2) * VCE=5V, IC= 500mA
2SD669
2SD669A
180
120
160
5
2SD669
2SD669A
60
60
30
Collector-emitter saturation voltage
VCE (sat) * IC=500 mA, IB=50mA
Base-emitter voltage
Transition frequency
VBE *
fT
VCE=5V,IC= 150mA
VCE=5V, IC=150mA
140
Collector output capacitance
Cob VCB=10 V , IE=0,f=1MHz
14
* The 2SD669 and 2SD669A are grouped by hFE1 as follows.
Rank
2SD 669
2SD669A
B
60 - 120
60 - 120
C
100 - 200
100 - 200
D
160 - 320
----
MAX UNIT
V
V
V
10 A
10 A
320
200
1V
1.5 V
MHz
pF
http://www.SeCoSGmbH.com/
10-Jul -2007 Rev. B
Any changing of specification will not be informed individual
Page 1 of 3

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Elektronische Bauelemente
2SD669/2SD669A
NPN Type
Plastic Encapsulate Transistors
Maximum Collector Dissipation
Curve
30
20
10
0 50 100 150
Case temperature TC (°C)
Typical Output Characteristecs
1.0
0.8
0.6
5.5 5.40.54.0
3.5
3.0
2.5
2.0
TC = 25°C
P
C = 20 W
1.5
0.4
1.0
0.2 0.5 mA
IB = 0
0 10 20 30 40 50
Collector to emitter voltage VCE (V)
Area of Safe Operation
3
(13.3 V, 1.5 A)
1.0
0.3
DC Operation(TC = 25°C)
0.1
0.03
0.01
1 3 10 30 100 300
Collector to emitter voltage VCE (V)
Typical Transfer Characteristics
500
200 VCE = 5 V
100
50
20
10
5
2
1
0 0.2 0.4 0.6 0.8 1.0
Base to emitter voltage VBE (V)
DC Current Transfer Ratio
vs. Collector Current
300
Ta = 75°C
250
25
200
150 –25
100
50 VCE = 5 V
1
1 3 10 30 100 300 1,000 3,000
Collector current IC (mA)
Collector to Emitter Saturation Voltage
vs. Collector Current
1.2
IC = 10 IB
1.0
0.8
0.6
0.4
0.2
0
1 3 10 30 100 300 1,000
Collector current IC (mA)
http://www.SeCoSGmbH.com/
10-Jul-2007 Rev. B
Any changing of specification will not be informed individual
Page 2of 3

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Elektronische Bauelemente
Base to Emitter Saturation Voltage
vs. Collector Current
1.2
IC = 10 IB
1.0
0.8 TC = –25°C
25
0.6 75
0.4
0.2
0
1 3 10 30 100 300 1,000
Collector current IC (mA)
Collector Output Capacitance
vs. Collector to Base Voltage
200
f = 1 MHz
100 IE = 0
50
20
10
5
2
12
5 10 20 50 100
Collector to base voltage VCB (V)
2SD669/2SD669A
NPN Type
Plastic Encapsulate Transistors
Gain Bandwidth Product
vs. Collector Current
240
VCE = 5 V
Ta = 25°C
200
160
120
80
40
0
10 30 100 300 1,000
Collector current IC (mA)
http://www.SeCoSGmbH.com/
10-Jul-2007 Rev. B
Any changing of specification will not be informed individual
Page 3 of 3